Preparation and structural properties of thin films and multilayers of the Heusler compounds Cu2MnAl, Co2MnSn, Co2MnSi and Co2MnGe

We report on the preparation of thin films and multilayers of the intermetallic Heusler compound CuMnAl, Co2MnSn, Co2MnSi and Co2MnGe by rf-sputtering on MgO and Al2O3 substrates. Cu2MnAl can be grown epitaxially with (100)-orientation on MgO (100) and in (110)-orientation on Al2O3 a-plane. The Co based Heusler alloys need metallic seedlayers to induce high quality textured growth. We also have prepared multilayers with smooth interfaces by combining the Heusler compounds with Au and V. An analysis of the ferromagnetic saturation magnetization of the films indicates that the Cu2MnAl-compound tends to grow in the disordered B2-type structure whereas the Co-based Heusler alloy thin films grow in the ordered L21 structure. All multilayers with thin layers of the Heusler compounds exhibit a definitely reduced ferromagnetic magnetization indicating substantial disorder and intermixing at the interfaces.Comment: 21 pages, 8 figure

Slater-Pauling Behavior of the Half-Ferromagnetic Full-Heusler Alloys

Using the full-potential screened Korringa-Kohn-Rostoker method we study the full-Heusler alloys based on Co, Fe, Rh and Ru. We show that many of these compounds show a half-metallic behavior, however in contrast to the half-Heusler alloys the energy gap in the minority band is extremely small. These full-Heusler compounds show a Slater-Pauling behavior and the total spin-magnetic moment per unit cell (M_t) scales with the total number of valence electrons (Z_t) following the rule: M_t=Z_t-24. We explain why the spin-down band contains exactly 12 electrons using arguments based on the group theory and show that this rule holds also for compounds with less than 24 valence electrons. Finally we discuss the deviations from this rule and the differences compared to the half-Heusler alloys.Comment: 10 pages, 8 figures, revised figure 3, new text adde

Transport properties of Co2CrAl Heusler alloy films

The effect of atomic disorder on the electron transport and the magnetoresistance (MR) of Co2CrAl Heusler alloy (HA) films has been investigated. We show that Co2CrAl films with L21 order exhibit a negative value for the temperature coefficient of resistivity (TCR) in a temperature range of 10 < T <  290 K, and the temperature dependence of electric conductivity varies as T3/2 similarly to that of the zero-gap semiconductors. The atomic or the site disorder on the way of L21 →  B2  →  A2  →  amorphous state in Co2CrAl HA films causes the deviation from this dependence: reduction in the absolute value of TCR as well as decrease in the resistivity down to ϱ(T = 293 K)  ~  200 μΩ cm in comparison to ϱ(T = 293 K)  ~  230 μΩ cm typical for the Co2CrAl films with L21 order. The magnetic-field dependence of MR of the Co2CrAl films with L21 order is determined by two competing contributions: a positive Lorentz scattering and a negative s-d scattering. The atomic disorder in Co2CrAl films drastically changes MR behavior due to its strong influence on the magnetic properties