How reliable are Hanle measurements in metals in a three-terminal geometry?

We test the validity of Hanle measurements in three-terminal devices by using aluminum (Al) and gold (Au). The obtained Hanle and inverted Hanle-like curves show an anomalous behavior. First, we measure Hanle signals 8 orders of magnitude larger than those predicted by standard theory. Second, the temperature and voltage dependences of the signal do not match with the tunneling spin polarization of the ferromagnetic contact. Finally, the spin relaxation times obtained with this method are independent of the choice of the metallic channel. These results are not compatible with spin accumulation in the metal. Furthermore, a scaling of the Hanle signal with the interface resistance of the devices suggests that the measured signal is originated in the tunnel junction.Comment: 9 pages, 5 figure

A two-dimensional spin field-effect switch

© The Author(s) 2016. Future development in spintronic devices will require an advanced control of spin currents, for example by an electric field. Here we demonstrate an approach that differs from previous proposals such as the Datta and Das modulator, and that is based on a van de Waals heterostructure of atomically thin graphene and semiconducting MoS2. Our device combines the superior spin transport properties of graphene with the strong spin-orbit coupling of MoS2 and allows switching of the spin current in the graphene channel between ON and OFF states by tuning the spin absorption into the MoS2 with a gate electrode. Our proposal holds potential for technologically relevant applications such as search engines or pattern recognition circuits, and opens possibilities towards electrical injection of spins into transition metal dichalcogenides and alike materials

Room-temperature air-stable spin transport in bathocuproine-based spin valves

Organic semiconductors, characterized by weak spin-scattering mechanisms, are attractive materials for those spintronic applications in which the spin information needs to be retained for long times. Prototypical spin-valve devices employing organic interlayers sandwiched between ferromagnetic materials possess a figure of merit (magnetoresistance (MR)) comparable to their fully inorganic counterparts. However, these results are a matter of debate as the conductivity of the devices does not show the expected temperature dependence. Here we show spin valves with an interlayer of bathocuproine in which the transport takes place unambiguously through the organic layer and where the electron spin coherence is maintained over large distances (>60 nm) at room temperature. Additionally, the devices show excellent air stability, with MR values almost unaltered after 70 days of storage under ambient conditions, making bathocuproine an interesting material for future spintronic applications.Fil: Sun, Xiangnan. CIC nanoGUNE; EspañaFil: Gobbi, Marco. Université de Strasbourg; Francia. CIC nanoGUNE; EspañaFil: Bedoya Pinto, Amilcar. CIC nanoGUNE; EspañaFil: Txoperena, Oihana. CIC nanoGUNE; EspañaFil: Golmar, Federico. CIC nanoGUNE; España. Instituto Nacional de Tecnología Industrial; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Llopis, Roger. CIC nanoGUNE; EspañaFil: Chuvilin, Andrey. CIC nanoGUNE; España. Fundación Vasca para la Ciencia; EspañaFil: Casanova, Félix. CIC nanoGUNE; España. Fundación Vasca para la Ciencia; EspañaFil: Hueso, Luis E.. CIC nanoGUNE; España. Fundación Vasca para la Ciencia; Españ

Towards standardisation of contact and contactless electrical measurements of CVD graphene at the macro-, micro- and nano-scale

Graphene has become the focus of extensive research efforts and it can now be produced in wafer-scale. For the development of next generation graphene-based electronic components, electrical characterization of graphene is imperative and requires the measurement of work function, sheet resistance, carrier concentration and mobility in both macro-, micro- and nano-scale. Moreover, commercial applications of graphene require fast and large-area mapping of electrical properties, rather than obtaining a single point value, which should be ideally achieved by a contactless measurement technique. We demonstrate a comprehensive methodology for measurements of the electrical properties of graphene that ranges from nano- to macro- scales, while balancing the acquisition time and maintaining the robust quality control and reproducibility between contact and contactless methods. The electrical characterisation is achieved by using a combination of techniques, including magneto-transport in the van der Pauw geometry, THz time-domain spectroscopy mapping and calibrated Kelvin probe force microscopy. The results exhibit excellent agreement between the different techniques. Moreover, we highlight the need for standardized electrical measurements in highly controlled environmental conditions and the application of appropriate weighting functions

Spin injection in two-dimensional layered materials and local magnetoresistance side-effects

180 p.El objetivo principal de esta tesis ha sido estudiar la inyección de espines en el disulfuro de molibdeno (MoS2). Este material es interesante por varias razones: por un lado, es un semiconductor (SC), y por lo tanto facilita su futura integración con los dispositivos electrónicos actuales; por otro lado, se pueden obtener fácilmente capas delgadas de MoS2 mediante la exfoliación del mineral correspondiente; por último, es un material muy versátil para la espintrónica, ya que sus propiedades de espín varían fuertemente con el grosor de las capas.En la primera parte de esta tesis se ha analizado un método llamado efecto Hanle de tres terminales (3T), muy empleado para obtener las propiedades de espín de SCs, pero con mucha controversia en la interpretación de los resultados. En nuestro caso, hemos aplicado este método en metales con una barrera túnel de alúmina (AlOx) en medio. Hemos caracterizado dos tipos de dispositivos: unos con un electrodo ferromagnético (FM) para intentar inyectar espines, y otros sin ningún electrodo FM y, por lo tanto, enteramente no-magnéticos (NM). Hemos visto que en ambos casos se miden curvas de magnetoresistencia parecidas, las cuales no están relacionadas con la inyección de espines, si no con la modulación de la corriente túnel a través de impurezas en el AlOx. Por lo tanto, concluimos que la geometría de 3T no es fiable para caracterizar las propiedades de espín del MoS2, y necesitaremos otro método diferente.En la segunda parte de las tesis hemos demostrado la inyección de espines en el MoS2 mediante la utilización de una válvula lateral de espines en el grafeno; concretamente, usamos el grafeno como canal intermedio entre los electrodos FMs y el MoS2, el cual absorbe los espines desde el grafeno. El dispositivo también funciona como un transistor eléctrico de espines, en el cual se puede modular la cantidad de espines circulando a través del grafeno mediante un campo eléctrico por primera vez

Direct observation of ultraslow hyperbolic polariton propagation with negative phase velocity

Polaritons with hyperbolic dispersion are key to many emerging photonic technologies, including subdiffraction imaging, sensing and spontaneous emission engineering1, 2, 3, 4, 5, 6, 7, 8. Fundamental to their effective application are the lifetimes of the polaritons, as well as their phase and group velocities7, 9. Here, we combine time-domain interferometry10 and scattering-type near-field microscopy11 to visualize the propagation of hyperbolic polaritons in space and time, allowing the first direct measurement of all these quantities. In particular, we study infrared phonon polaritons in a thin hexagonal boron nitride8, 12, 13 waveguide exhibiting hyperbolic dispersion and deep subwavelength-scale field confinement. Our results reveal—in a natural material—negative phase velocity paired with a remarkably slow group velocity of 0.002c and lifetimes in the picosecond range. While these findings show the polariton's potential for mediating strong light–matter interactions and negative refraction, our imaging technique paves the way to explicit nanoimaging of polariton propagation characteristics in other two-dimensional materials, metamaterials and waveguides.Peer Reviewe

Wafer-scale graphene field-effect transistor biosensor arrays with monolithic CMOS readout

The reliability of analysis is becoming increasingly important as point-of-care diagnostics are transitioning from single analyte detection towards multiplexed multianalyte detection. Multianalyte detection benefits greatly from complementary metal-oxide semiconductor (CMOS) integrated sensing solutions, offering miniaturized multiplexed sensing arrays with integrated readout electronics and extremely large sensor counts. The development of CMOS back end of line integration compatible graphene field-effect transistor (GFET) based biosensing has been rapid during the last few years, both in terms of the fabrication scale-up and functionalization towards biorecognition from real sample matrices. The next steps in industrialization relate to improving reliability and require increased statistics. Regarding functionalization towards truly quantitative sensors and on-chip bioassays with improved statistics require sensor arrays with reduced variability in functionalization. Such multiplexed bioassays, whether based on graphene or on other sensitive nanomaterials, are among the most promising technologies for label-free electrical biosensing. As an important step towards that, we report wafer-scale fabrication of CMOS integrated GFET arrays with high yield and uniformity, designed especially for biosensing applications. We demonstrate the operation of the sensing platform array with 512 GFETs in simultaneous detection for sodium chloride concentration series. This platform offers a truly statistical approach on GFET based biosensing and further to quantitative and multi-analyte sensing. The reported techniques can also be applied to other fields relying on functionalized GFETs, such as gas or chemical sensing or infrared imaging

Wafer-Scale Graphene Field-Effect Transistor Biosensor Arrays with Monolithic CMOS Readout

The reliability of analysis is becoming increasingly important as point-of-care diagnostics are transitioning from single-analyte detection toward multiplexed multianalyte detection. Multianalyte detection benefits greatly from complementary metal-oxide semiconductor (CMOS) integrated sensing solutions, offering miniaturized multiplexed sensing arrays with integrated readout electronics and extremely large sensor counts. The development of CMOS back end of line integration compatible graphene field-effect transistor (GFET)-based biosensing has been rapid during the past few years, in terms of both the fabrication scale-up and functionalization toward biorecognition from real sample matrices. The next steps in industrialization relate to improving reliability and require increased statistics. Regarding functionalization toward truly quantitative sensors, on-chip bioassays with improved statistics require sensor arrays with reduced variability in functionalization. Such multiplexed bioassays, whether based on graphene or on other sensitive nanomaterials, are among the most promising technologies for label-free electrical biosensing. As an important step toward that, we report wafer-scale fabrication of CMOS-integrated GFET arrays with high yield and uniformity, designed especially for biosensing applications. We demonstrate the operation of the sensing platform array with 512 GFETs in simultaneous detection for the sodium chloride concentration series. This platform offers a truly statistical approach on GFET-based biosensing and further to quantitative and multianalyte sensing. The reported techniques can also be applied to other fields relying on functionalized GFETs, such as gas or chemical sensing or infrared imaging