346 research outputs found
Untersuchungen zum Umsetzungsverhalten ausgewählter organischer Düngemittel
Stickstoff ist zum einen einer der wichtigsten Pflanzennährstoffe. Andererseits führt die Verlagerung von Nitrat ins Grundwasser zu Umweltproblemen.
Im ökologischen Landbau darf Stickstoff nur in organischer Form als Wirtschaftsdünger, Kompost oder organischer Handelsdünger ausgebracht werden. Aber gerade bei organischen Materialien bestehen Schwierigkeiten in der Abschätzung der Stickstofffreisetzung. Die Mineralisierungsprozesse sind von verschiedenen, oft nur schwer kalkulierbaren Faktoren abhängig.
Um nähere Informationen über die Mineralisation von organischen Handelsdüngern zu erhalten, wurden an der LVWO Weinsberg Brutversuche mit Hornspänen und Rizinusschrot unter definierten Bedingungen durchgeführt. Die Faktoren 'Temperatur', 'Wassergehalt' und 'Lagerungsdichte' wurden variiert und deren Auswirkungen auf den Verlauf der Stickstofffreisetzung beobachtet.
Parallel dazu wurde ein Freilandversuch angelegt, um die Nitratgehalte im Boden nach einer organischen DĂĽngung zu prĂĽfen
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Material agency and performative dynamics in the practices of media art
This thesis was submitted for the degree of Doctor of Philosophy and awarded by Brunel UniversityThis dissertation identifies a strategy of artistic inquiry within contemporary media art practice. It applies the concept of material that acts in an agential capacity, generating performative acts. It argues that the emergent potentials of materials and their interconnectedness with the compositional layers of a work can facilitate modes of effecting change in the artistic system. Through the theoretical investigation of the production processes of physical structures and environments, the thesis focuses on the compositional dynamics within which materials actively
perform. It examines how Lars Spuybroek’s architectural design method of Material Machines (2004), and both the tactile potential as well as tactical uses of materials as generators to the formtaking
process, might describe an open and active artistic strategy for employing the experimental capacities of such materialization processes. Building on philosophical and conceptual arguments that trace concepts of agency (Bruno Latour’s Actant-Network theory) and enactment (Karen Barad’s concept of intra-acting), the
thesis introduces the two installation works ANI_MATE (described as a performative pneumatic stage machine) and ON TRACK (described as a mechanic-robotic installation). These apply the introduced artistic strategies. The analyses of these two artworks traces the particular capacities of the materials involved (respectively, their elasticity or viscosity) to negotiate forces of physical
movement, which effect the system to transiently or irreversibly transform.
ANI_MATE is a machine that is artist-operated and that explores the relationship between liveanimation procedures and the transformability and flexibility of its material environment. In contrast, ON TRACK’s performative machine ecology removes human agency. The machines act autonomously, giving rise to chance in the artistic system and allowing agency to emerge from the
dynamic interconnectivity between materials, parts, and processes, eventually producing an
entropic scenario of spilling resources.
The thesis concludes that, in the context of a post digital paradigm in-development, such artistic practice offers a new strategy for an emergent aesthetics within contemporary physical-digital performance
Band gap renormalization in photoexcited semiconductor quantum wire structures in the GW approximation
We investigate the dynamical self-energy corrections of the electron-hole
plasma due to electron-electron and electron-phonon interactions at the band
edges of a quasi-one dimensional (1D) photoexcited electron-hole plasma. The
leading-order dynamical screening approximation is used in the calculation
by treating electron-electron Coulomb interaction and electron-optical phonon
Fr\"{o}hlich interaction on an equal footing. We calculate the
exchange-correlation induced band gap renormalization (BGR) as a function of
the electron-hole plasma density and the quantum wire width. The calculated BGR
shows good agreement with existing experimental results, and the BGR normalized
by the effective quasi-1D excitonic Rydberg exhibits an approximate
one-parameter universality.Comment: 11 pages, 3 figure
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Origin of a-plane (Al,Ga)N formation on patterned c-plane AIN/sapphire templates
a-plane (Al,Ga)N layers can be grown on patterned c-plane AlN/sapphire templates with a ridge direction along [1bar 100]Al2O3. Scanning nanobeam diffraction reveals that the formation of a-plane layers can be explained by nucleation of c-plane (Al,Ga)N with [11bar 20](Al,Ga)N[0001]Al2O3 at the ridge sidewalls. Faster growth of the top (11bar 20)(Al,Ga)N facet in the vertical direction leads to the overgrowth of c-plane (Al,Ga)N nucleated on the horizontal ridge and trench surfaces. Phase separation into binary GaN and AlN takes place during the first growth stages. However, this fades out and does not influence the composition of the final thick a-plane (Al,Ga)N layer
Risk homeostasis theory - A study of intrinsic compensation
Risk homeostasis theory (RHT) suggests that changes made to the intrinsic risk of environments are negated in one of three ways: behavioural adjustments within the environment, mode migration, and avoidance of the physical risk. To date, this three-way model of RHT has little empirical support, whilst research findings on RHT have at times been diametrically opposed. A reconciliation of apparently opposing findings might be possible by suggesting that extrinsic compensation fails to restore previously existing levels of actual risk in cases where behavioural adjustments within the environment are incapable of negating intrinsic risk changes. This paper reports a study in which behavioural adjustments within the physical risk-taking environment are capable of reconciling target with actual risk. The results provide positive support for RHT in the form of overcompensation for the intrinsic risk change on specific driver behaviours
On-chip integration of single solid-state quantum emitters with a SiO2 photonic platform
One important building block for future integrated nanophotonic devices is the scalable on-chip interfacing of single photon emitters and quantum memories with single optical modes. Here we present the deterministic integration of a single solid-state qubit, the nitrogen-vacancy (NV) center, with a photonic platform consisting exclusively of SiO2 grown thermally on a Si substrate. The platform stands out by its ultra-low fluorescence and the ability to produce various passive structures such as high-Q microresonators and mode-size converters. By numerical analysis an optimal structure for the efficient coupling of a dipole emitter to the guided mode could be determined. Experimentally, the integration of a preselected NV emitter was performed with an atomic force microscope and the on-chip excitation of the quantum emitter as well as the coupling of single photons to the guided mode of the integrated structure could be demonstrated. Our approach shows the potential of this platform as a robust nanoscale interface of on-chip photonic structures with solid-state qubits.European Fund for Regional Development of the European UnionBundesministerium fĂĽr Bildung und Forschung https://doi.org/10.13039/501100002347Peer Reviewe
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783 nm wavelength stabilized DBR tapered diode lasers with a 7 W output power
Wavelength stabilized distributed Bragg reflector (DBR) tapered diode lasers at 783 nm will be presented. The devices are based on GaAsP single quantum wells embedded in a large optical cavity leading to a vertical far field angle of about 29◦ (full width at half maximum). The 3-inch (7.62 cm) wafers are grown using metalorganic vapor phase epitaxy. In a full wafer process, 4 mm long DBR tapered lasers are manufactured. The devices consist of a 500 µm long 10th order surface DBR grating that acts as rear side mirror. After that, a 1 mm long ridge waveguide section is realized for lateral confinement, which is connected to a 2.5 mm long flared section having a full taper angle of 6◦. At an injection current of 8 A, a maximum output power of about 7 W is measured. At output powers up to 6 W, the measured emission width limited by the resolution of the spectrometer is smaller than 19 pm. Measured at 1/e2 level at this output power, the lateral beam waist width is 11.5 µm, the lateral far field angle 12.5◦, and the lateral beam parameter M2 2.5. The respective parameters measured using the second moments are 31 µm, 15.2◦, and 8.3. 70% of the emitted power is originated from the central lobe. © 2021 Optical Society of Americ
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