Transport in tunnelling recombination junctions: a combined computer simulation study

The implementation of trap-assisted tunneling of charge carriers into numerical simulators ASPIN and D-AMPS is briefly described. Important modeling details are highlighted and compared. In spite of the considerable differences in both approaches, the problems encountered and their solutions are surprisingly similar. Simulation results obtained for several tunneling recombination junctions made of amorphous silicon (a-Si), amorphous silicon carbide (a-SiC), or microcrystalline silicon (µc-Si) are analyzed. Identical conclusions can be drawn using either of the simulators. Realistic performances of a-Si/a-Si tandem solar cells can be reproduced with simulation programs by assuming that extended-state mobility increases exponentially with the electric field. The same field-enhanced mobilities are needed in single tunneling recombination junctions in order to achieve measured current levels. Temperature dependence of the current-voltage characteristics indicates that the activation energy of enhanced mobilities should be determined. Apparent discrepancies between simulation results and measurements are explained and eliminated making use of Gill’s law. For application in tandem and triple solar cell structures, tunneling recombination junctions made of (µc-Si) are the most promising of all examined structures.Fil: Vukadinovic, M.. University of Ljubljana; EsloveniaFil: Smole, F.. University of Ljubljana; EsloveniaFil: Topič, M.. University of Ljubljana; EsloveniaFil: Schropp, R. E. .. Utrecht University; Países BajosFil: Rubinelli, Francisco Alberto. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentin

Stability of plasmonic metal nanoparticles integrated in the back contact of ultra-thin Cu(In,Ga)S2 solar cells

Ultra-thin solar cells on transparent back contacts constitute the basis for highly efficient tandem solar devices which can surpass the single cell efficiency limit. The material reduction related to ultra-thin high efficiency devices additionally lowers the price. Despite the fact that they are ultra- thin the absorbers still have to remain optically thick and therefore require adequate light management. A promising approach for enhanced absorption is plasmonic scattering from metal nanoparticles. In this paper we discuss the experimental incorporation of Ag nanoparticles in ultra-thin wide-gap chalcopyrite solar cells on transparent back contacts. A 6.9% efficient 500 nm Cu(In,Ga)S2 solar cell on In2O3:Mo (at this point without nanoparticles) is the starting point. For the predicted optimum design of including particles at the rear side the stability of the nanostructures integrated in the back contact is investigated in detail. As a first step towards proof-of-concept, absorption enhancement from the nanoparticles included in the complete solar cell is experimentally shown in optical properties

Experimental verification of optically optimized CuGaSe

An efficient tandem solar cell requires a top cell which is highly transparent below the energy gap of its absorber. Previously we had reported on a theoretically optimized CuGaSe2 top cell stack based on realistic material properties. It promised a significant increase in optical transparency and, consequently, enhanced CuGaSe2/Cu(In,Ga)Se2 tandem efficiency. Here we present the first steps taken towards the experimental realization of this optimized tandem. We started with a mechanically stacked device which achieved 8.5% efficiency. Optical measurements of the improved top cells and corresponding photo current densities of the filtered bottom cell are reported. The experimental findings are in agreement with the optical modeling. These data are used to assess the level of tandem performance that could be accomplished in the near future and to discuss the priorities of further research

Modeling and optimization of white paint back reflectors for thin-film silicon solar cells

Diffusive dielectric materials such as white paint have been demonstrated as effective back reflectors in the photovoltaic technology. In this work, a one-dimensional (1D) optical modeling approach for simulation of white paint films is developed and implemented in a 1D optical simulator for thin-film solar cells. The parameters of white paint, such as the paint film thickness, the pigment volume concentration (PVC), and the pigment/binder refractive index ratio (RIR), are examined and optimized to achieve the required optical properties for back reflector application. The simulation trends indicate that white paint back reflectors with sufficient film thickness and higher PVC and RIR values exhibit improved reflectivity characteristics which results in an increased long-wavelength quantum efficiency of thin-film silicon solar cells. The simulation results based on the 1D model agree very well with the experimental data obtained from reflectance measurements of various white paint compositions and quantum efficiency measurements of amorphous silicon solar cells with white paint back reflectors.Electrical Sustainable EnergyElectrical Engineering, Mathematics and Computer Scienc

Micromorph silicon solar cell optical performance: Influence of intermediate reflector and front electrode surface texture

The optical performance of tandem a-Si:H/μc-Si:H (micromorph) thin film solar cell was investigated experimentally and by means of rigorous 3-D optical simulation. The interplay of intermediate reflectors, with different refractive indices and thicknesses, and front electrode surface texture was studied. Experiments and simulations show that LPCVD ZnO based front electrodes have the highest optical potential together with a low refractive index of the intermediate reflector. The intermediate reflector layer serves for redistribution of the mid-range solar spectrum between the top and bottom cell, while the sum of the top and bottom cell currents decreases with increasing IRL thickness. Additionally, promising concepts to increase the short-circuit current of the tandem solar cell are shown. The most important steps are related to lowering parasitic absorption in supportive layers by the introduction of silicon oxide layers and improving the light incoupling by introduction of anti-reflective layers

Modelling Supported Design of Light Management Structures in Ultra-Thin Cigs Photovoltaic Devices

Chalcopyrite solar cells exhibit one of the highest conversion efficiencies among thin-film solar cell technologies (> 23.3%), however a considerably thick absorber ≥1.8 μm is required for an efficient absorption of the long-wavelength light and collection of charge carriers. In order to minimize the material consumption and to accelerate the fabrication process, further thinning down of the absorber layer is important. Using a thin absorber layer results in a highly reduced photocurrent density and to compensate for it an effective light management needs to be introduced. Experimentally supported, advanced optical simulations in a PV module configuration, i.e. solar cell structure including the encapsulation and front glass are employed to design solutions to increase the short current density of devices with ultra-thin (500 nm) absorbers. In particular (i) highly reflective metal back reflector (BR), (ii) internal nano-textures and (iii) external textures by applying a light management (LM) foil are investigated by simulations. Experimental verification of simulation results is presented for the external texture case. In the scope of this contribution we show that any individual aforementioned approach is not sufficient to compensate for the short circuit current drop of the thin CIGS, but only a combination of highly reflective back contact and introduction of textures (internal or external) is able to compensate and also to exceed (by more than 5 % for internal texture) photocurrent density of a thick (1800 nm) CIGS absorber