Growth of single-crystal gallium nitride

Use of ultrahigh purity ammonia prevents oxygen contamination of GaN during growth, making it possible to grow the GaN at temperatures as high as 825 degrees C, at which point single crystal wafers are deposited on /0001/-oriented sapphire surfaces

P-n junctions formed in gallium antimonide

Vapor phase deposition process forms a heavily doped n-region on a melt-grown p-type gallium antimonide substrate. HCl transports gallium to the reaction zone, where it combines with antimony hydride and the dopant carrier, hydrogen telluride. Temperatures as low as 400 degrees C are required

Controlled substrate cooling improves reproducibility of vapor deposited semiconductor composites

Improved substrate holder preferentially provides more uniform substrate cooling and increases the proportion of vapor flowing over the substrate during growth. Nitrogen gas is constricted in the substrate holder to cool the substrate

Vapor Phase Growth Technique and System for Several III-V Compound Semiconductors Interim Scientific Report

Vapor phase crystal growth and preparation of gallium, indium, arsenic, phosphorous, and antimony alloy semiconductor material

Vapor phase growth technique and system for several 3-5 compound semiconductors Quarterly technical report

Vapor phase growth technique and system for group 3A and 5A compound semiconductor

Vapor-phase growth technique and system for several III-V compound semiconductors Interim scientific report

Vapor phase growth technique for III-V compound semiconductors containing aluminu

Benthic enrichment in the Georgia Bight related to Gulf Stream intrusions and estuarine outwelling

The distribution patterns of benthic biomass (microbiota, meiofauna, and macrofauna) over the expansive continental shelf of the Georgia Bight suggest nutrient inputs from intrusions of deep Gulf Stream waters at the shelf break…

Vapor phase growth technique and system for several III-V compound semiconductors Interim scientific report

Vapor phase growth method for single crystalline preparation of gallium nitride, gallium arsenide alloy, and gallium antimonide allo

Emerging Views on the CTD Code

The C-terminal domain (CTD) of RNA polymerase II (Pol II) consists of conserved heptapeptide repeats that function as a binding platform for different protein complexes involved in transcription, RNA processing, export, and chromatin remodeling. The CTD repeats are subject to sequential waves of posttranslational modifications during specific stages of the transcription cycle. These patterned modifications have led to the postulation of the “CTD code” hypothesis, where stage-specific patterns define a spatiotemporal code that is recognized by the appropriate interacting partners. Here, we highlight the role of CTD modifications in directing transcription initiation, elongation, and termination. We examine the major readers, writers, and erasers of the CTD code and examine the relevance of describing patterns of posttranslational modifications as a “code.” Finally, we discuss major questions regarding the function of the newly discovered CTD modifications and the fundamental insights into transcription regulation that will necessarily emerge upon addressing those challenges

Coastal upwelling off the Rías Bajas, Galicia, Northwest Spain. II. Benthic studies

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