22 research outputs found

    Influence of Light Stress on the Accumulation of Xanthophylls and Lipids in Haematococcus pluvialis CCALA 1081 Grown under Autotrophic or Mixotrophic Conditions

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    The influence of light stress and trophic environmental conditions on the production of astaxanthin, other xanthophylls and lipids from an Argentinian strain of Haematococcus pluvialis was investigated. Microalgae cultures were incubated for two weeks in autotrophic or mixotrophic conditions (with sodium acetate in the culture medium) and subjected to two different light stresses. HPLC analyses showed that: 1) regardless of the growth conditions, microalgal cells accumulated most of the astaxanthin (about 90%) in esterified form; 2) maximal increase of astaxanthin level was observed in the culture grown in autotrophic conditions subjected to moderate light stress (90 μmol photons m-2 s-1), while the same light regime in mixotrophic conditions led to a lower increase (only 25.8 fold); 3) in the case of high light stress (350 μmol photons m-2 s-1), the adaptive response of microalgae also led to a significant increase in the amount of astaxanthin both in autotrophic (22 fold increase) and in mixotrophic (16 fold increase) conditions; 4) an inverse correlation (R2 = 0.977) exists between the amount of lipids and that of astaxanthin accumulated by Haematococcus grown under different growth conditions; 5) lutein was found to be the most accumulated pigment in microalgae not subjected to light stress.Fil: Doria, Enrico. University of Pavia. Department of Biology and Biotechnology; ItaliaFil: Temporiti, Marta Elisabetta E.. University of Pavia. Department of Biology and Biotechnology; ItaliaFil: Damiani, Maria Cecilia. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Bahía Blanca. Centro de Recursos Naturales Renovables de la Zona Semiárida. Universidad Nacional del Sur. Centro de Recursos Naturales Renovables de la Zona Semiárida; Argentina. Universidad Nacional del Sur. Departamento de Biología, Bioquímica y Farmacia; ArgentinaFil: Popovich, Cecilia Angelines. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Bahía Blanca. Centro de Recursos Naturales Renovables de la Zona Semiárida. Universidad Nacional del Sur. Centro de Recursos Naturales Renovables de la Zona Semiárida; Argentina. Universidad Nacional del Sur. Departamento de Biología, Bioquímica y Farmacia; ArgentinaFil: Leonardi, Patricia Ines. Universidad Nacional del Sur. Departamento de Biología, Bioquímica y Farmacia; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Bahía Blanca. Centro de Recursos Naturales Renovables de la Zona Semiárida. Universidad Nacional del Sur. Centro de Recursos Naturales Renovables de la Zona Semiárida; ArgentinaFil: Nielsen, Erik. University of Pavia. Department of Biology and Biotechnology; Itali

    Transmitter made up of a Silicon Photonic IC and its Flip-Chipped CMOS IC DriverTargeting implementation in FDMA-PON

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    We report on the design, fabrication and characterization of a reflective transmitter targeting implementation in Passive Optical Networks (PON) with Frequency Division Multiplexed Access (FDMA). It is made up of a Silicon Photonic Integrated Circuit (Si-PIC) comprising a Reflective Mach Zehnder Modulator (R-MZM) and its flip chipped CMOS Electronic Integrated Circuit (EIC) driver, the two ICs being interconnected by means of high density and low parasitic copper micro pillars. Several transmissions, in an FDMA PON context, are successfully demonstrated using 500MBaud QPSK and 16-QAM modulated subcarriers, achieving Bit Error Rate (BER) below 2.10-3. For QPSK-modulated subcarriers (respectively 16-QAM), the available access frequency bandwidth is measured to be [1-7GHz] (respectively [2-4GHz]) with an available loss budget of 9dB (respectively 5dB). Improvements of the Si-PIC are further identified to achieve compliancy with 31dB ODN loss

    Demonstration of a partially integrated silicon photonics ONU in a self-coherent reflective FDMA PON

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    We report about the final results of the FABULOUS European project, demonstrating the feasibility of real-time Ethernet transmission on a self-coherent reflective passive optical network, using an optical network unit (ONU) whose main optical functions are performed by a silicon-photonics device; 500 Mbps per user with a power budget of 24 dB in offline processing and 21 dB in real time is shown. We also report details about the packaging process and the special technique developed for the flip-chipping of a CMOS electrical driver, used for driving the ONU with low voltage, onto a silicon Mach-Zehnder modulator

    DEVICE COMPRISING A RING OPTICAL RESONATOR

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    A device includes an optical resonator having four ports including a first port, a second port, a third port, and a fourth port. A first electronic circuit is configured to calculate a first information representative of a power difference between optical signals supplied by two of the four ports. A method of operating a device is also disclosed

    Toroidal inductors in CMOS processes

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    This paper presents a toroidal inductor integrated in a standard 0.13 μm CMOS process. A very simple Π model for low frequencies is derived from 1-port and 2-port measurements, and a decent matching with general theory is observed. The coil exhibits an inductance of 1.1nH up to 20GHz (physical limit for the measurement equipment) and a quality factor approaching 10 at 15GHz. No self-resonance is observed within the measurement range

    A toroidal inductor integrated in a standard CMOS process

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    This paper presents a toroidal inductor integrated in a standard 0.13 mu m CMOS process. Finite-elements preliminary simulations are provided to prove the validity of the concept. In order to extract fundamental parameters by means of direct calculations, two different and well-known approaches are followed and the results are compared; this comparison provides useful guidelines for the design of the device. A very simple Pi model for low frequencies is derived from 1-port and 2-port measurements, and a good matching with general theory is observed. The coil exhibits an inductance between 0.9 nH and 1.1 nH up to 20 GHz (physical limit for the measurement equipment) and a quality factor approaching 10 at 15 GHz. No self-resonance is observed within the measurement range
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