Modelling and Simulation of Normally-off AlGaN/GaN MOS-HEMTs

The article presents the results of modelling and simulation of normally-off AlGaN/GaN MOS-HEMT transistors. The effect of the resistivity of the GaN:C layer, the channel mobility and the use of high- dielectrics on the electrical characteristics of the transistor has been examined. It has been shown that a low leakage current of less than 10-6 A/mm can be achieved for the acceptor dopant concentration at the level of 5x1015 cm-3. The limitation of the maximum on-state current due to the low carrier channel mobility has been shown. It has also been demonstrated that the use of HfO2, instead of SiO2, as a gate dielectric increases on-state current above 0.7A/mm and reduces the negative influence of the charge accumulated in the dielectric layer

Intrinsically disordered N-terminal domain of the Helicoverpa armigera Ultraspiracle stabilizes the dimeric form via a scorpion-like structure

Nuclear receptors (NRs) are a family of ligand-dependent transcription factors activated by lipophilic compounds. NRs share a common structure comprising three domains: a variable N-terminal domain (NTD), a highly conserved globular DNA-binding domain and a ligand-binding domain. There are numerous papers describing the molecular details of the latter two globular domains. However, very little is known about the structure-function relationship of the NTD, especially as an intrinsically disordered fragment of NRs that may influence the molecular properties and, in turn, the function of globular domains. Here, we investigated whether and how an intrinsically disordered NTD consisting of 58 amino acid residues affects the functions of the globular domains of the Ultraspiracle protein from Helicoverpa armigera (HaUsp). The role of the NTD was examined for two well-known and easily testable NR functions, i.e., interactions with specific DNA sequences and dimerization. Electrophoretic mobility shift assays showed that the intrinsically disordered NTD influences the interaction of HaUsp with specific DNA sequences, apparently by destabilization of HaUsp-DNA complexes. On the other hand, multi-angle light scattering and sedimentation velocity analytical ultracentrifugation revealed that the NTD acts as a structural element that stabilizes HaUsp homodimers. Molecular models based on small-angle X-ray scattering indicate that the intrinsically disordered NTD may exert its effects on the tested HaUsp functions by forming an unexpected scorpion-like structure, in which the NTD bends towards the ligand-binding domain in each subunit of the HaUsp homodimer. This structure may be crucial for specific NTD-dependent regulation of the functions of globular domains in NR

Carrier Trap Density Reduction at SiO₂/4H-Silicon Carbide Interface with Annealing Processes in Phosphoryl Chloride and Nitride Oxide Atmospheres

The electrical and physical properties of the SiC/SiO2 interfaces are critical for the reliability and performance of SiC-based MOSFETs. Optimizing the oxidation and post-oxidation processes is the most promising method of improving oxide quality, channel mobility, and thus the series resistance of the MOSFET. In this work, we analyze the effects of the POCl3 annealing and NO annealing processes on the electrical properties of metal–oxide–semiconductor (MOS) devices formed on 4H-SiC (0001). It is shown that combined annealing processes can result in both low interface trap density (Dit), which is crucial for oxide application in SiC power electronics, and high dielectric breakdown voltage comparable with those obtained via thermal oxidation in pure O2. Comparative results of non-annealed, NO-annealed, and POCl3-annealed oxide–semiconductor structures are shown. POCl3 annealing reduces the interface state density more effectively than the well-established NO annealing processes. The result of 2 × 1011 cm−2 for the interface trap density was attained for a sequence of the two-step annealing process in POCl3 and next in NO atmospheres. The obtained values Dit are comparable to the best results for the SiO2/4H-SiC structures recognized in the literature, while the dielectric critical field was measured at a level ≥9 MVcm−1 with low leakage currents at high fields. Dielectrics, which were developed in this study, have been used to fabricate the 4H-SiC MOSFET transistors successfully

Temperature Evolution of Phonon Properties in Few-Layer Black Phosphorus

We present the results of Raman measurements of few-layer black phosphorus in a temperature range between 4 and 400 K. The BP Raman mode positions, widths, and intensity ratios exhibit apparent nonlinear temperature dependences, which we attributed to the phenomenon of optical phonon decay into two or three acoustic phonons. These results pave the way for a deeper understanding of the phonon and thermal properties of black phosphorus

Study of Oxides Formed in HfO\\textless\sub\\textgreater\2\\textless\/sub\\textgreater\/Si Structure for High-\\textless\i\\textgreater\k\\textless\/i\\textgreater\ Dielectric Applications

score: 10collation: 78-8

AlGaN/GaN High Electron Mobility Transistors on Semi-Insulating Ammono-GaN Substrates with Regrown Ohmic Contacts

AlGaN/GaN high electron mobility transistors on semi-insulating bulk ammonothermal GaN have been investigated. By application of regrown ohmic contacts, the problem with obtaining low resistance ohmic contacts to low-dislocation high electron mobility transistor (HEMT) structures was solved. The maximum output current was about 1 A/mm and contact resistances was in the range of 0.3⁻0.6 Ω ·mm. Good microwave performance was obtained due to the absence of parasitic elements such as high access resistance

Characterisation of MetC by SEC.

<p>Characterisation of MetC by SEC.</p

Determination of the structure of MetC by CD in the far-UV region.

<p>Determination of the structure of MetC by CD in the far-UV region.</p