Expression of wheat gibberellins 2-oxidase gene induced dwarf or semi-dwarf phenotype in rice

Gibberellins (GAs) are a class of plant hormones that play important roles in diverse aspects during plant growth and development. A series of GA synthesis and metabolism genes have been reported or proved to have essential functions in different plant species, while a small number of GA 2-oxidase genes have been cloned or reported in wheat. Previous studies have provided some important findings on the process of GA biosynthesis and the enzymes involved in its related pathways. These may facilitate understanding of the complicated process underlying GA synthesis and metabolism in wheat. In this study, GA 2-oxidase genes TaGA2ox1-1, TaGA2ox1-2, TaGA2ox1-3, TaGA2ox1-4, TaGA2ox1-5, and TaGA2ox1-6 were identified and further overexpressed in rice plants to investigate their functions in GA biosynthesis and signaling pathway. Results showed overexpression of GA 2-oxidase genes in rice disrupted the GA metabolic pathways and induced catalytic responses and regulated other GA biosynthesis and signaling pathway genes, which further leading to GA signaling disorders and diversity in phenotypic changes in rice plants

Solidification of Al-Sn-Cu based immiscible alloys under intense shearing

The official published version of the Article can be accessed from the link below - Copyright @ 2009 The Minerals, Metals & Materials Society and ASM InternationalThe growing importance of Al-Sn based alloys as materials for engineering applications necessitates the development of uniform microstructures with improved performance. Guided by the recently thermodynamically assessed Al-Sn-Cu system, two model immiscible alloys, Al-45Sn-10Cu and Al-20Sn-10Cu, were selected to investigate the effects of intensive melt shearing provided by the novel melt conditioning by advanced shear technology (MCAST) unit on the uniform dispersion of the soft Sn phase in a hard Al matrix. Our experimental results have confirmed that intensive melt shearing is an effective way to achieve fine and uniform dispersion of the soft phase without macro-demixing, and that such dispersed microstructure can be further refined in alloys with precipitation of the primary Al phase prior to the demixing reaction. In addition, it was found that melt shearing at 200 rpm and 60 seconds will be adequate to produce fine and uniform dispersion of the Sn phase, and that higher shearing speed and prolonged shearing time can only achieve minor further refinement.This work is funded by the EPSRC and DT

First-principles study of nucleation, growth, and interface structure of Fe/GaAs

We use density-functional theory to describe the initial stages of Fe film growth on GaAs(001), focusing on the interplay between chemistry and magnetism at the interface. Four features appear to be generic: (1) At submonolayer coverages, a strong chemical interaction between Fe and substrate atoms leads to substitutional adsorption and intermixing. (2) For films of several monolayers and more, atomically abrupt interfaces are energetically favored. (3) For Fe films over a range of thicknesses, both Ga- and As-adlayers dramatically reduce the formation energies of the films, suggesting a surfactant-like action. (4) During the first few monolayers of growth, Ga or As atoms are likely to be liberated from the interface and diffuse to the Fe film surface. Magnetism plays an important auxiliary role for these processes, even in the dilute limit of atomic adsorption. Most of the films exhibit ferromagnetic order even at half-monolayer coverage, while certain adlayer-capped films show a slight preference for antiferromagnetic order.Comment: 11 two-column pages, 12 figures, to appear in Phys. Rev.

Spin-current modulation and square-wave transmission through periodically stubbed electron waveguides

Ballistic spin transport through waveguides, with symmetric or asymmetric double stubs attached to them periodically, is studied systematically in the presence of a weak spin-orbit coupling that makes the electrons precess. By an appropriate choice of the waveguide length and of the stub parameters injected spin-polarized electrons can be blocked completely and the transmission shows a periodic and nearly square-type behavior, with values 1 and 0, with wide gaps when only one mode is allowed to propagate in the waveguide. A similar behavior is possible for a certain range of the stub parameters even when two-modes can propagate in the waveguide and the conductance is doubled. Such a structure is a good candidate for establishing a realistic spin transistor. A further modulation of the spin current can be achieved by inserting defects in a finite-number stub superlattice. Finite-temperature effects on the spin conductance are also considered.Comment: 19 pages, 8 figure

A Self Assembled Nanoelectronic Quantum Computer Based on the Rashba Effect in Quantum Dots

Quantum computers promise vastly enhanced computational power and an uncanny ability to solve classically intractable problems. However, few proposals exist for robust, solid state implementation of such computers where the quantum gates are sufficiently miniaturized to have nanometer-scale dimensions. Here I present a new approach whereby a complete computer with nanoscale gates might be self-assembled using chemical synthesis. Specifically, I demonstrate how to self-assemble the fundamental unit of this quantum computer - a 2-qubit universal quantum controlled-NOT gate - based on two exchange coupled multilayered quantum dots. Then I show how these gates can be wired using thiolated conjugated molecules as electrical connectors. A qubit is encoded in the ground state of a quantum dot spin-split by the Rashba interaction. Arbitrary qubit rotations are effected by bringing the spin splitting energy in a target quantum dot in resonance with a global ac magnetic field by applying a potential pulse of appropriate amplitude and duration to the dot. The controlled dynamics of the 2-qubit controlled-NOT operation (XOR) can be realized by exploiting the exchange coupling with the nearest neighboring dot. A complete prescription for initialization of the computer and data input/output operations is presented.Comment: 22 pages, 4 figure

Spin injection into a ballistic semiconductor microstructure

A theory of spin injection across a ballistic ferromagnet-semiconductor-ferromagnet junction is developed for the Boltzmann regime. Spin injection coefficient $\gamma$ is suppressed by the Sharvin resistance of the semiconductor $r_N^*=(h/e^2)(\pi^2/S_N)$, where $S_N$ is the Fermi-surface cross-section. It competes with the diffusion resistances of the ferromagnets $r_F$, and $\gamma\sim r_F/r_N^*\ll 1$ in the absence of contact barriers. Efficient spin injection can be ensured by contact barriers. Explicit formulae for the junction resistance and the spin-valve effect are presented.Comment: 5 pages, 2 column REVTeX. Explicit prescription relating the results of the ballistic and diffusive theories of spin injection is added. To this end, some notations are changed. Three references added, typos correcte

Associations between maternal complications during pregnancy and childhood asthma: a retrospective cohort study

© 2023 The Authors. Published by the European Respiratory Society. This is an open access article available under a Creative Commons licence. The published version can be accessed at the following link on the publisher’s website: https://openres.ersjournals.com/content/9/2/00548-2022Background Studies on the associations between maternal complications during pregnancy and childhood asthma are exclusively conducted in Western countries. The findings are mixed and may not be translated to other populations. We aimed to investigate the associations among the Chinese population and to determine whether the associations were mediated through pre-term birth, caesarean delivery, low birthweight and not breastfeeding in the first 6 months. Methods We conducted a retrospective cohort study of 166 772 children in Guangzhou, China. Information on maternal gestational hypertension, gestational diabetes and gestational anaemia during pregnancy was extracted from medical records. Ever-diagnosis of asthma in children aged 6–12 years was obtained by questionnaire. Logistic regression models and mediation analyses were used to estimate the adjusted odds ratios (aORs) and 95% confidence intervals for childhood asthma. Results Gestational hypertension, gestational diabetes and gestational anaemia during pregnancy were associated with an increased risk of ever-diagnosed childhood asthma: aOR 1.48 (95% CI 1.37–1.60), 1.71 (95% CI 1.65–1.78) and 1.34 (95% CI 1.26–1.45), respectively. A stronger association was observed for two or three gestational complications (aOR 2.02 (95% CI 1.93–2.16)) than one gestational complication (aOR 1.64 (95% CI 1.52–1.77)). The aOR for the three gestational complications was 1.35 (95% CI 1.26–1.45), 1.63 (95% CI 1.58–1.70) and 1.32 (95% CI 1.24–1.43), respectively, after controlling for the mediators, including pre-term birth, caesarean delivery, low birthweight and not breastfeeding in the first 6 months. Conclusions Gestational hypertension, gestational diabetes and gestational anaemia were associated with childhood asthma, and the associations were partially explained by the mediation effects.This study was supported by National Natural Science Foundation of China (82073571 and 81773457 to J. Tang).Published versio

Measurements of the observed cross sections for e+e−→e^+e^-\to exclusive light hadrons containing π0π0\pi^0\pi^0 at s=3.773\sqrt s= 3.773, 3.650 and 3.6648 GeV

By analyzing the data sets of 17.3, 6.5 and 1.0 pb$^{-1}$ taken, respectively, at $\sqrt s= 3.773$, 3.650 and 3.6648 GeV with the BES-II detector at the BEPC collider, we measure the observed cross sections for $e^+e^-\to \pi^+\pi^-\pi^0\pi^0$, $K^+K^-\pi^0\pi^0$, $2(\pi^+\pi^-\pi^0)$, $K^+K^-\pi^+\pi^-\pi^0\pi^0$ and $3(\pi^+\pi^-)\pi^0\pi^0$ at the three energy points. Based on these cross sections we set the upper limits on the observed cross sections and the branching fractions for $\psi(3770)$ decay into these final states at 90% C.L..Comment: 7 pages, 2 figure

Theory of spin-polarized bipolar transport in magnetic p-n junctions

The interplay between spin and charge transport in electrically and magnetically inhomogeneous semiconductor systems is investigated theoretically. In particular, the theory of spin-polarized bipolar transport in magnetic p-n junctions is formulated, generalizing the classic Shockley model. The theory assumes that in the depletion layer the nonequilibrium chemical potentials of spin up and spin down carriers are constant and carrier recombination and spin relaxation are inhibited. Under the general conditions of an applied bias and externally injected (source) spin, the model formulates analytically carrier and spin transport in magnetic p-n junctions at low bias. The evaluation of the carrier and spin densities at the depletion layer establishes the necessary boundary conditions for solving the diffusive transport equations in the bulk regions separately, thus greatly simplifying the problem. The carrier and spin density and current profiles in the bulk regions are calculated and the I-V characteristics of the junction are obtained. It is demonstrated that spin injection through the depletion layer of a magnetic p-n junction is not possible unless nonequilibrium spin accumulates in the bulk regions--either by external spin injection or by the application of a large bias. Implications of the theory for majority spin injection across the depletion layer, minority spin pumping and spin amplification, giant magnetoresistance, spin-voltaic effect, biasing electrode spin injection, and magnetic drift in the bulk regions are discussed in details, and illustrated using the example of a GaAs based magnetic p-n junction.Comment: 36 pages, 11 figures, 2 table

Partial wave analysis of J/\psi \to \gamma \phi \phi

Using $5.8 \times 10^7 J/\psi$ events collected in the BESII detector, the radiative decay $J/\psi \to \gamma \phi \phi \to \gamma K^+ K^- K^0_S K^0_L$ is studied. The $\phi\phi$ invariant mass distribution exhibits a near-threshold enhancement that peaks around 2.24 GeV/$c^{2}$. A partial wave analysis shows that the structure is dominated by a $0^{-+}$ state ($\eta(2225)$) with a mass of $2.24^{+0.03}_{-0.02}{}^{+0.03}_{-0.02}$ GeV/$c^{2}$ and a width of $0.19 \pm 0.03^{+0.06}_{-0.04}$ GeV/$c^{2}$. The product branching fraction is: $Br(J/\psi \to \gamma \eta(2225))\cdot Br(\eta(2225)\to \phi\phi) = (4.4 \pm 0.4 \pm 0.8)\times 10^{-4}$.Comment: 11 pages, 4 figures. corrected proof for journa