Magnetic anisotropy driven by ligand in 4d transition metal oxide SrRuO3

The origin of magnetic anisotropy in magnetic compounds is a longstanding issue in solid state physics and nonmagnetic ligand ions are considered to contribute little to magnetic anisotropy. Here, we introduce the concept of ligand driven magnetic anisotropy in a complex transition-metal oxide. We conducted X ray absorption and X ray magnetic circular dichroism spectroscopies at the Ru and O edges in the 4d ferromagnetic metal SrRuO3. Systematic variation of the sample thickness in the range below 10 nm allowed us to control the localization of Ru 4d t2g states, which affects the magnetic coupling between the Ru and O ions. We found that the orbital magnetization of the ligand induced via hybridization with the Ru 4d orbital determines the magnetic anisotropy in SrRuO3

Soft X-ray Absorption and Photoemission Studies of Ferromagnetic Mn-Implanted 3CC-SiC

We have performed x-ray photoemission spectroscopy (XPS), x-ray absorption spectroscopy (XAS), and resonant photoemission spectroscopy (RPES) measurements of Mn-implanted 3$C$-SiC (3$C$-SiC:Mn) and carbon-incorporated Mn$_{5}$Si$_{2}$ (Mn$_{5}$Si$_{2}$:C). The Mn 2$p$ core-level XPS and XAS spectra of 3$C$-SiC:Mn and Mn$_{5}$Si$_{2}$:C were similar to each other and showed "intermediate" behaviors between the localized and itinerant Mn 3$d$ states. The intensity at the Fermi level was found to be suppressed in 3$C$-SiC:Mn compared with Mn$_{5}$Si$_{2}$:C. These observations are consistent with the formation of Mn$_{5}$Si$_{2}$:C clusters in the 3$C$-SiC host, as observed in a recent transmission electron microscopy study.Comment: 4 pages, 3 figure

Conduction-band electronic states of YbInCu4 studied by photoemission and soft x-ray absorption spectroscopies

We have studied conduction-band (CB) electronic states of a typical valence-transition compound YbInCu4 by means of temperature-dependent hard x-ray photoemission spectroscopy (HX-PES) of the Cu 2p3/2 and In 3d5/2 core states taken at hν=5.95 keV, soft x-ray absorption spectroscopy (XAS) of the Cu 2p3/2 core absorption region around hν∼935 eV, and soft x-ray photoemission spectroscopy (SX-PES) of the valence band at the Cu 2p3/2 absorption edge of hν=933.0 eV. With decreasing temperature below the valence transition at TV=42 K, we have found that (1) the Cu 2p3/2 and In 3d5/2 peaks in the HX-PES spectra exhibit the energy shift toward the lower binding-energy side by ∼40 and ∼30 meV, respectively, (2) an energy position of the Cu 2p3/2 main absorption peak in the XAS spectrum is shifted toward higher photon-energy side by ∼100 meV, with an appearance of a shoulder structure below the Cu 2p3/2 main absorption peak, and (3) an intensity of the Cu L3VV Auger spectrum is abruptly enhanced. These experimental results suggest that the Fermi level of the CB-derived density of states is shifted toward the lower binding-energy side. We have described the valence transition in YbInCu4 in terms of the charge transfer from the CB to Yb 4f states

Spin torque control of antiferromagnetic moments in NiO

For a long time, there were no efficient ways of controlling antiferromagnets. Quite a strong magnetic field was required to manipulate the magnetic moments because of a high molecular field and a small magnetic susceptibility. It was also difficult to detect the orientation of the magnetic moments since the net magnetic moment is effectively zero. For these reasons, research on antiferromagnets has not been progressed as drastically as that on ferromagnets which are the main materials in modern spintronic devices. Here we show that the magnetic moments in NiO, a typical natural antiferromagnet, can indeed be controlled by the spin torque with a relatively small electric current density (~4 × 107 A/cm2) and their orientation is detected by the transverse resistance resulting from the spin Hall magnetoresistance. The demonstrated techniques of controlling and detecting antiferromagnets would outstandingly promote the methodologies in the recently emerged “antiferromagnetic spintronics”. Furthermore, our results essentially lead to a spin torque antiferromagnetic memory