Sea-Ice Production in Antarctic Coastal Polynyas Estimated From AMSR2 Data and Its Validation Using AMSR-E and SSM/I-SSMIS Data

Antarctic coastal polynyas are very high sea-ice production areas. The resultant large amount of brine rejection leads to the formation of dense water. The dense water forms Antarctic bottom water, which is the densest water in the global overturning circulation and a key player in climate change as a significant sink for heat and carbon dioxide. In this study, an algorithm was developed that uses Advanced Microwave Scanning Radiometer 2 (AMSR2) data (2012-present) to detect polynya area and estimates thin ice thickness by a method similar to that used to develop the algorithm for Advanced Microwave Scanning Radiometer for EOS (AMSR-E) data. Landfast sea-ice areas were also detected using AMSR2 data. Ice production in the polynyas was estimated by a heat flux calculation using AMSR2 sea-ice data. In four major polynyas, AMSR2 ice production was compared with AMSR-E (2003-2011) ice production through comparison of them with Special Sensor Microwave Imager (SSM/I) and Special Sensor Microwave Imager/Sounder (SSMIS) ice production. The comparison confirmed that the ice production from AMSR-E/2 data, which have higher spatial resolution than SSM/I-SSMIS data, can be used to analyze time series covering more than 10 years. For example, maps of annual ice production based on AMSR-E/2 data revealed detailed changes of the Mertz Polynya, where the ice production decreased significantly after the Mertz Glacier Tongue calving in 2010. Continuous monitoring of the coastal polynyas by the AMSR series sensors is essential for climate-change-related analyses in the Antarctic Ocean

Identification of Si-vacancy related room temperature qubits in 4H silicon carbide

Identification of microscopic configuration of point defects acting as quantum bits is a key step in the advance of quantum information processing and sensing. Among the numerous candidates, silicon vacancy related centers in silicon carbide (SiC) have shown remarkable properties owing to their particular spin-3/2 ground and excited states. Although, these centers were observed decades ago, still two competing models, the isolated negatively charged silicon vacancy and the complex of negatively charged silicon vacancy and neutral carbon vacancy [Phys. Rev. Lett.\ \textbf{115}, 247602 (2015)] are argued as an origin. By means of high precision first principles calculations and high resolution electron spin resonance measurements, we here unambiguously identify the Si-vacancy related qubits in hexagonal SiC as isolated negatively charged silicon vacancies. Moreover, we identify the Si-vacancy qubit configurations that provide room temperature optical readout.Comment: 3 figure

Excitation properties of the divacancy in 4H-SiC

We investigate the quenching of the photoluminescence (PL) from the divacancy defect in 4H-SiC consisting of a nearest-neighbour silicon and carbon vacancies. The quenching occurs only when the PL is excited below certain photon energies (thresholds), which differ for the four different inequivalent divacancy configurations in 4H-SiC. Refined theoretical ab initio calculation for the charge-transfer levels of the divacancy show very good agreement between the position of the (0/-) level with respect to the conduction band for each divacancy configurations and the corresponding experimentally observed threshold, allowing us to associate the PL decay with conversion of the divacancy from neutral to negative charge state due to capture of electrons photoionized from other defects (traps) by the excitation. Electron paramagnetic resonance measurements are conducted in dark and under excitation similar to that used in the PL experiments and shed light on the possible origin of traps in the different samples. A simple model built on this concept agrees well with the experimentally-observed decay curves.Comment: 28 pages, 6 figure

Vector magnetometry using silicon vacancies in 4H-SiC at ambient conditions

Point defects in solids promise precise measurements of various quantities. Especially magnetic field sensing using the spin of point defects has been of great interest recently. When optical readout of spin states is used, point defects achieve optical magnetic imaging with high spatial resolution at ambient conditions. Here, we demonstrate that genuine optical vector magnetometry can be realized using the silicon vacancy in SiC, which has an uncommon S=3/2 spin. To this end, we develop and experimentally test sensing protocols based on a reference field approach combined with multi frequency spin excitation. Our works suggest that the silicon vacancy in an industry-friendly platform, SiC, has potential for various magnetometry applications at ambient conditions

Optimization temperature sensitivity using the optically detected magnetic resonance spectrum of a nitrogen-vacancy center ensemble

Temperature sensing with nitrogen vacancy (NV) centers using quantum techniques is very promising and further development is expected. Recently, the optically detected magnetic resonance (ODMR) spectrum of a high-density ensemble of the NV centers was reproduced with noise parameters [inhomogeneous magnetic field, inhomogeneous strain (electric field) distribution, and homogeneous broadening] of the NV center ensemble. In this study, we use ODMR to estimate the noise parameters of the NV centers in several diamonds. These parameters strongly depend on the spin concentration. This knowledge is then applied to theoretically predict the temperature sensitivity. Using the diffraction-limited volume of 0.1 micron^3, which is the typical limit in confocal microscopy, the optimal sensitivity is estimated to be around 0.76 mK/Hz^(1/2) with an NV center concentration of 5.0e10^17/cm^3. This sensitivity is much higher than previously reported sensitivities, demonstrating the excellent potential of temperature sensing with NV centers.Comment: 17 pages, 4 figures, 1 tabl