34,328 research outputs found

    Development of thermal stratification and destratification scaling concepts. Volume 1: Definition of thermal stratification scaling parameters and experimental investigations

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    The dimensionless parameters associated with the thermal stratification and pressure history of a heated container of liquid and its vapor were examined. The Modified Grashof number, the Fourier number, and an Interface number were parameterized using a single test liquid, Freon 113. Cylindrical test tanks with spherical dome end caps were built. Blanket heaters covered the tanks and thermocouples monitored the temperatures of the liquid, the ullage, the tank walls, and the foam insulation encapsulating the tank. A centrifuge was used for the 6 inch tank to preserve the same scaling parameter values between it and the larger tanks. Tests were conducted over a range of Gr* values and the degree of scaling was checked by comparing the dimensionless pressures and temperatures for each scaled pair of tests. Results indicate that the bulk liquid temperature, the surface temperature of the liquid, and the tank pressure can be scaled with the three dimensionless parameters. Some deviation was, however, found in the detailed temperature profiles between the scaled pairs of tests

    Effects of low energy electron irradiation on formation of nitrogen-vacancy centers in single-crystal diamond

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    Exposure to beams of low energy electrons (2 to 30 keV) in a scanning electron microscope locally induces formation of NV-centers without thermal annealing in diamonds that have been implanted with nitrogen ions. We find that non-thermal, electron beam induced NV-formation is about four times less efficient than thermal annealing. But NV-center formation in a consecutive thermal annealing step (800C) following exposure to low energy electrons increases by a factor of up to 1.8 compared to thermal annealing alone. These observations point to reconstruction of nitrogen-vacancy complexes induced by electronic excitations from low energy electrons as an NV-center formation mechanism and identify local electronic excitations as a means for spatially controlled room-temperature NV-center formation

    Ion kinetic energy conservation and magnetic field strength constancy in multi-fluid solar wind Alfv\'enic turbulence

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    We investigate properties of the plasma fluid motion in the large amplitude low frequency fluctuations of highly Alfv\'enic fast solar wind. We show that protons locally conserve total kinetic energy when observed from an effective frame of reference comoving with the fluctuations. For typical properties of the fast wind, this frame can be reasonably identified by alpha particles, which, owing to their drift with respect to protons at about the Alfv\'en speed along the magnetic field, do not partake in the fluid low frequency fluctuations. Using their velocity to transform proton velocity into the frame of Alfv\'enic turbulence, we demonstrate that the resulting plasma motion is characterized by a constant absolute value of the velocity, zero electric fields, and aligned velocity and magnetic field vectors as expected for unidirectional Alfv\'enic fluctuations in equilibrium. We propose that this constraint, via the correlation between velocity and magnetic field in Alfv\'enic turbulence, is at the origin of the observed constancy of the magnetic field: while the constant velocity corresponding to constant energy can be only observed in the frame of the fluctuations, the correspondingly constant total magnetic field, invariant for Galilean transformations, remains the observational signature, in the spacecraft frame, of the constant total energy in the Alfv\'en turbulence frame.Comment: 6 pages, 6 figures, Accepted for publication in The Astrophysical Journa

    MeV oxygen ion implantation induced compositional intermixing in AlAs/GaAs superlattices

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    We present in this letter an investigation of compositional intermixing in AlAs/GaAs superlattices induced by 2 MeV oxygen ion implantation. The results are compared with implantation at 500 keV. In addition to Al intermixing in the direct lattice damage region by nuclear collision spikes, as is normally present in low-energy ion implantation, Al interdiffusion has also been found to take place in the subsurface region where MeV ion induced electronic spike damage dominates and a uniform strain field builds up due to defect generation and diffusion. Uniform compositional intermixing of the superlattices results after subsequent thermal annealing when Al interdiffusion is stimulated through recovery of the implantation-induced lattice strain field, the reconstruction and the redistribution of lattice defects, and annealing of lattice damage

    Influence of substrate temperature on lattice strain field and phase transition in MeV oxygen ion implanted GaAs crystals

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    A detailed study of the influence of substrate temperature on the radiation-induced lattice strain field and crystalline-to-amorphous (c-a) phase transition in MeV oxygen ion implanted GaAs crystals has been made using channeling Rutherford backscattering spectroscopy, secondary ion mass spectrometry, and the x-ray rocking curve technique. A comparison has been made between the cases of room temperature (RT) and low temperature (LT) (about 100 K) implantation. A strong in situ dynamic annealing process is found in RT implantation at a moderate beam current, resulting in a uniform positive strain field in the implanted layer. LT implantation introduces a freeze-in effect which impedes the recombination and diffusion of initial radiation-created lattice damage and defects, and in turn drives more efficiently the c-a transition as well as strain saturation and relaxation. The results are interpreted with a spike damage model in which the defect production process is described in terms of the competition between defect generation by nuclear spikes and defects diffusion and recombination stimulated by electronic spikes. It is also suggested that the excess population of vacancies and their complexes is responsible for lattice spacing expansion in ion-implanted GaAs crystals

    The nature of the long time decay at a second order transition point

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    We show that at a second order phase transition, of \phi^4 like system, a necessary condition for streched exponential decay of the time structure factor is obeyed. Using the ideas presented in this proof a crude estimate of the decay of the structure factor is obtained and shown to yield stretched exponential decay under very reasonable conditions.Comment: 7 page

    Temporal Correlations and Persistence in the Kinetic Ising Model: the Role of Temperature

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    We study the statistical properties of the sum St=∫0tdt′σt′S_t=\int_{0}^{t}dt' \sigma_{t'}, that is the difference of time spent positive or negative by the spin σt\sigma_{t}, located at a given site of a DD-dimensional Ising model evolving under Glauber dynamics from a random initial configuration. We investigate the distribution of StS_{t} and the first-passage statistics (persistence) of this quantity. We discuss successively the three regimes of high temperature (T>TcT>T_{c}), criticality (T=TcT=T_c), and low temperature (T<TcT<T_{c}). We discuss in particular the question of the temperature dependence of the persistence exponent θ\theta, as well as that of the spectrum of exponents θ(x)\theta(x), in the low temperature phase. The probability that the temporal mean St/tS_t/t was always larger than the equilibrium magnetization is found to decay as t−θ−12t^{-\theta-\frac12}. This yields a numerical determination of the persistence exponent θ\theta in the whole low temperature phase, in two dimensions, and above the roughening transition, in the low-temperature phase of the three-dimensional Ising model.Comment: 21 pages, 11 PostScript figures included (1 color figure

    All-Optical Depletion of Dark Excitons from a Semiconductor Quantum Dot

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    Semiconductor quantum dots are considered to be the leading venue for fabricating on-demand sources of single photons. However, the generation of long-lived dark excitons imposes significant limits on the efficiency of these sources. We demonstrate a technique that optically pumps the dark exciton population and converts it to a bright exciton population, using intermediate excited biexciton states. We show experimentally that our method considerably reduces the DE population while doubling the triggered bright exciton emission, approaching thereby near-unit fidelity of quantum dot depletion.Comment: 5 pages, 3 figure

    Diversidade, síndromes de dispersão e formas de vida vegetal em diferentes estágios sucessionais de florestas secundárias em Tomé-Açu, Pará, Brasil.

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    Florestas secundárias (capoeiras) são formas de vegetação resultantes de processos sucessionais determinados pelo histórico de uso da terra, distância de florestas primárias bem como fatores estocásticos. O estágio sucessional pode indicar quais as formas de vida vegetal e as síndromes de dispersão dominantes no ambiente. Neste estudo foram avaliados: uma floresta primária (controle) e florestas secundárias de 25, 10 e 5 anos no município de Tomé-Açu, Pará, Brasil. A primeira apresentou 224 espécies e a floresta secundária de cinco anos teve 91, a menor quantidade. O número de espécies diferiu entre ambientes (&#967;2 = 59,6; p <0,001), mas não a quantidade de famílias (&#967;2 = 3,6; p = 0,305). O índice de Shannon-Weaner foi alto para todas as florestas, exceto para a capoeira de cinco anos. A distribuição de formas de vida e as síndromes de dispersão diferiram para todas as capoeiras quando comparadas com as distribuições observadas na floresta primária. As formas arbustivas predominaram na capoeira de cinco anos e as arbóreas nas demais. As espécies zoocóricas foram as mais frequentes, enquanto que as autocóricas e hidrocóricas as mais comuns na floresta primária. Devido às boas condições de diversidade das florestas secundárias de Tomé-Açu, sugerimos ações para um manejo florestal sustentável visando retornos econômicos e a conservação destes ambientes
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