Scaling properties of step bunches induced by sublimation and related mechanisms: A unified perspective

This work provides a ground for a quantitative interpretation of experiments on step bunching during sublimation of crystals with a pronounced Ehrlich-Schwoebel (ES) barrier in the regime of weak desorption. A strong step bunching instability takes place when the kinetic length is larger than the average distance between the steps on the vicinal surface. In the opposite limit the instability is weak and step bunching can occur only when the magnitude of step-step repulsion is small. The central result are power law relations of the between the width, the height, and the minimum interstep distance of a bunch. These relations are obtained from a continuum evolution equation for the surface profile, which is derived from the discrete step dynamical equations for. The analysis of the continuum equation reveals the existence of two types of stationary bunch profiles with different scaling properties. Through a mathematical equivalence on the level of the discrete step equations as well as on the continuum level, our results carry over to the problems of step bunching induced by growth with a strong inverse ES effect, and by electromigration in the attachment/detachment limited regime. Thus our work provides support for the existence of universality classes of step bunching instabilities [A. Pimpinelli et al., Phys. Rev. Lett. 88, 206103 (2002)], but some aspects of the universality scenario need to be revised.Comment: 21 pages, 8 figure

Kinetic Monte Carlo simulations of oscillatory shape evolution for electromigration-driven islands

The shape evolution of two-dimensional islands under electromigration-driven periphery diffusion is studied by kinetic Monte Carlo (KMC) simulations and continuum theory. The energetics of the KMC model is adapted to the Cu(100) surface, and the continuum model is matched to the KMC model by a suitably parametrized choice of the orientation-dependent step stiffness and step atom mobility. At 700 K shape oscillations predicted by continuum theory are quantitatively verified by the KMC simulations, while at 500 K qualitative differences between the two modeling approaches are found.Comment: 7 pages, 6 figure

Simulation of a high-speed demultiplexer based on two-photon absorption in semiconductor devices

In this paper, we present a theoretical model of an all-optical demultiplexer based on two-photon absorption in a specially designed semiconductor micro-cavity for use in an optical time division multiplexed system. We show that it is possible to achieve error-free demultiplexing of a 250 Gbit/s OTDM signal (25 × 10 Gbit/s channels) using a control-to-signal peak pulse power ratios of around 30:1 with a device bandwidth of approximately 30 GHz

Short-time scaling behavior of growing interfaces

The short-time evolution of a growing interface is studied within the framework of the dynamic renormalization group approach for the Kadar-Parisi-Zhang (KPZ) equation and for an idealized continuum model of molecular beam epitaxy (MBE). The scaling behavior of response and correlation functions is reminiscent of the ``initial slip'' behavior found in purely dissipative critical relaxation (model A) and critical relaxation with conserved order parameter (model B), respectively. Unlike model A the initial slip exponent for the KPZ equation can be expressed by the dynamical exponent z. In 1+1 dimensions, for which z is known exactly, the analytical theory for the KPZ equation is confirmed by a Monte-Carlo simulation of a simple ballistic deposition model. In 2+1 dimensions z is estimated from the short-time evolution of the correlation function.Comment: 27 pages LaTeX with epsf style, 4 figures in eps format, submitted to Phys. Rev.

Interfaces with a single growth inhomogeneity and anchored boundaries

The dynamics of a one dimensional growth model involving attachment and detachment of particles is studied in the presence of a localized growth inhomogeneity along with anchored boundary conditions. At large times, the latter enforce an equilibrium stationary regime which allows for an exact calculation of roughening exponents. The stochastic evolution is related to a spin Hamiltonian whose spectrum gap embodies the dynamic scaling exponent of late stages. For vanishing gaps the interface can exhibit a slow morphological transition followed by a change of scaling regimes which are studied numerically. Instead, a faceting dynamics arises for gapful situations.Comment: REVTeX, 11 pages, 9 Postscript figure

Driven Lattice Gases with Quenched Disorder: Exact Results and Different Macroscopic Regimes

We study the effect of quenched spatial disorder on the steady states of driven systems of interacting particles. Two sorts of models are studied: disordered drop-push processes and their generalizations, and the disordered asymmetric simple exclusion process. We write down the exact steady-state measure, and consequently a number of physical quantities explicitly, for the drop-push dynamics in any dimensions for arbitrary disorder. We find that three qualitatively different regimes of behaviour are possible in 1-$d$ disordered driven systems. In the Vanishing-Current regime, the steady-state current approaches zero in the thermodynamic limit. A system with a non-zero current can either be in the Homogeneous regime, chracterized by a single macroscopic density, or the Segregated-Density regime, with macroscopic regions of different densities. We comment on certain important constraints to be taken care of in any field theory of disordered systems.Comment: RevTex, 17pages, 18 figures included using psfig.st

Spiral Growth and Step Edge Barriers

The growth of spiral mounds containing a screw dislocation is compared to the growth of wedding cakes by two-dimensional nucleation. Using phase field simulations and homoepitaxial growth experiments on the Pt(111) surface we show that both structures attain the same characteristic large scale shape when a significant step edge barrier suppresses interlayer transport. The higher vertical growth rate observed for the spiral mounds on Pt(111) reflects the different incorporation mechanisms for atoms in the top region and can be formally represented by an enhanced apparent step edge barrier.Comment: 11 pages, 4 figures, partly in colo

Kinetic roughening of surfaces: Derivation, solution and application of linear growth equations

We present a comprehensive analysis of a linear growth model, which combines the characteristic features of the Edwards--Wilkinson and noisy Mullins equations. This model can be derived from microscopics and it describes the relaxation and growth of surfaces under conditions where the nonlinearities can be neglected. We calculate in detail the surface width and various correlation functions characterizing the model. In particular, we study the crossover scaling of these functions between the two limits described by the combined equation. Also, we study the effect of colored and conserved noise on the growth exponents, and the effect of different initial conditions. The contribution of a rough substrate to the surface width is shown to decay universally as $w_i(0) (\xi_s/\xi(t))^{d/2}$, where $\xi(t) \sim t^{1/z}$ is the time--dependent correlation length associated with the growth process, $w_i(0)$ is the initial roughness and $\xi_s$ the correlation length of the substrate roughness, and $d$ is the surface dimensionality. As a second application, we compute the large distance asymptotics of the height correlation function and show that it differs qualitatively from the functional forms commonly used in the intepretation of scattering experiments.Comment: 28 pages with 4 PostScript figures, uses titlepage.sty; to appear in Phys. Rev.