25,921 research outputs found

    Influence of Anomalous Dispersion on Optical Characteristics of Quantum Wells

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    Frequency dependencies of optical characteristics (reflection, transmission and absorption of light) of a quantum well are investigated in a vicinity of interband resonant transitions in a case of two closely located excited energy levels. A wide quantum well in a quantizing magnetic field directed normally to the quantum-well plane, and monochromatic stimulating light are considered. Distinctions between refraction coefficients of barriers and quantum well, and a spatial dispersion of the light wave are taken into account. It is shown that at large radiative lifetimes of excited states in comparison with nonradiative lifetimes, the frequency dependence of the light reflection coefficient in the vicinity of resonant interband transitions is defined basically by a curve, similar to the curve of the anomalous dispersion of the refraction coefficient. The contribution of this curve weakens at alignment of radiative and nonradiative times, it is practically imperceptible at opposite ratio of lifetimes . It is shown also that the frequency dependencies similar to the anomalous dispersion do not arise in transmission and absorption coefficients.Comment: 10 pages, 6 figure

    Profile alterations of a symmetrical light pulse coming through a quantum well

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    The theory of a response of a two-energy-level system, irradiated by symmetrical light pulses, has been developed.(Suchlike electronic system approximates under the definite conditions a single ideal quantum well (QW) in a strong magnetic field {\bf H}, directed perpendicularly to the QW's plane, or in magnetic field absence.) The general formulae for the time-dependence of non-dimensional reflection {\cal R}(t), absorption {\cal A}(t) and transmission {\cal T}(t) of a symmetrical light pulse have been obtained. It has been shown that the singularities of three types exist on the dependencies {\cal R}(t), {\cal A}(t), {\cal T}(t). The oscillating time dependence of {\cal R}(t), {\cal A}(t), {\cal T}(t) on the detuning frequency \Delta\omega=\omega_l-\omega_0 takes place. The oscillations are more easily observable when \Delta\omega\simeq\gamma_l. The positions of the total absorption, reflection and transparency singularities are examined when the frequency \omega_l is detuned.Comment: 9 pages, 13 figures with caption

    Single-particle and Interaction Effects on the Cohesion and Transport and Magnetic Properties of Metal Nanowires at Finite Voltages

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    The single-particle and interaction effects on the cohesion, electronic transport, and some magnetic properties of metallic nanocylinders have been studied at finite voltages by using a generalized mean-field electron model. The electron-electron interactions are treated in the self-consistent Hartree approximation. Our results show the single-particle effect is dominant in the cohesive force, while the nonzero magnetoconductance and magnetotension coefficients are attributed to the interaction effect. Both single-particle and interaction effects are important to the differential conductance and magnetic susceptibility.Comment: 5 pages, 6 figure

    Magnetooptical effects in quantum wells irradiated with light pulses

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    The method of detection and investigation of the magnetopolaron effect in the semiconductor quantum wells (QW) in a strong magnetic field, based on pulse light irradiation and measuring the reflected and transmitted pulses, has been proposed. It has been shown that a beating amplitude on the frequencies, corresponding to the magnetopolaron energy level splitting, depends strongly from the exciting pulse width. The existence of the time points of the total reflection and total transparency has been predicted. The high orders of the perturbation theory on electron-electromagnetic field interaction have been taken into account.Comment: 5 pages, 5 figures with captions, corrected typos, figures are reedeted to improve their quality in accordance with the Referee requirement; Phys. Rev. B, Brief Reports, submitted for publicatio

    Injection of liquids into the soil with a high-pressure jet

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    With regard to injection fertilizing, the more general topic of liquid injection into the soil with the aid of a high-pressure jet is of great importance.  Injection fertilizing means that liquid fertilizer is injected into the soil near the plant roots.  This provides many agronomical advantages.  However, currently available mechanical injection fertilizing techniques in the field use have some disadvantages, such as very heavy wear on individual components.  Therefore, research on the direct, contactless injection of liquids into the soil with the aid of a high-pressure jet is being carried out at the Institute of Agricultural Machinery and Fluid Power of the Technische Universitaet of Braunschweig.  The potential and the possibilities of injection by a high-pressure jet are being examined in trials on a stationary test rig.  In these trials, different soils were used under different conditions (soil moisture, and soil density), and the possibilities of injecting pure water in the form of a high-pressure water jet were studied.  It was shown that the variation of different parameters of the high-pressure jet, such as water pressure, volume flow, etc., allow different injection depths in the soil to be realized.  Especially soil moisture has a very great influence on injection.  In dry soils, for example, the binding forces of the soil bodies (solid body bridges, van-der-Waals forces, etc.) are very strong so that only small injection depths can be reached.  The higher the degree of soil moisture is, the larger the injection depth becomes.  Depending on the soil type, average soil moisture, water pressure of 40 MPa, and speed of the nozzle over the ground of 2 m/s provide injection depths of 70 – 90 mm.  In addition to application in the area of injection fertilizing, the considered injection of liquids into the soil also shows great potential in plant protection, irrigation, as well as the injection of decontamination agents into contaminated soils.Keywords: injection of liquids, soil, fertilisation, high pressure, contactless, frictionles

    Electron-Transport Properties of Na Nanowires under Applied Bias Voltages

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    We present first-principles calculations on electron transport through Na nanowires at finite bias voltages. The nanowire exhibits a nonlinear current-voltage characteristic and negative differential conductance. The latter is explained by the drastic suppression of the transmission peaks which is attributed to the electron transportability of the negatively biased plinth attached to the end of the nanowire. In addition, the finding that a voltage drop preferentially occurs on the negatively biased side of the nanowire is discussed in relation to the electronic structure and conduction.Comment: 4 pages, 6 figure

    Large Fourier transforms never exactly realized by braiding conformal blocks

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    Fourier transform is an essential ingredient in Shor's factoring algorithm. In the standard quantum circuit model with the gate set \{\U(2), \textrm{CNOT}\}, the discrete Fourier transforms FN=(ωij)N×N,i,j=0,1,...,N1,ω=e2πiNF_N=(\omega^{ij})_{N\times N},i,j=0,1,..., N-1, \omega=e^{\frac{2\pi i}{N}}, can be realized exactly by quantum circuits of size O(n2),n=logNO(n^2), n=\textrm{log}N, and so can the discrete sine/cosine transforms. In topological quantum computing, the simplest universal topological quantum computer is based on the Fibonacci (2+1)-topological quantum field theory (TQFT), where the standard quantum circuits are replaced by unitary transformations realized by braiding conformal blocks. We report here that the large Fourier transforms FNF_N and the discrete sine/cosine transforms can never be realized exactly by braiding conformal blocks for a fixed TQFT. It follows that approximation is unavoidable to implement the Fourier transforms by braiding conformal blocks

    Principals of the theory of light reflection and absorption by low-dimensional semiconductor objects in quantizing magnetic fields at monochromatic and pulse excitations

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    The bases of the theory of light reflection and absorption by low-dimensional semiconductor objects (quantum wells, wires and dots) at both monochromatic and pulse irradiations and at any form of light pulses are developed. The semiconductor object may be placed in a stationary quantizing magnetic field. As an example the case of normal light incidence on a quantum well surface is considered. The width of the quantum well may be comparable to the light wave length and number of energy levels of electronic excitations is arbitrary. For Fourier-components of electric fields the integral equation (similar to the Dyson-equation) and solutions of this equation for some individual cases are obtained.Comment: 14 page
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