Robustness of adaptive expectations as an equilibrium selection device

Equilibrium Theory;Rational Expectations

Bias dependent specic contact resistance of phase change material to metal contacts

Knowledge of contact resistance of phase change materials (PCM) to metal electrodes is important for scaling, device modeling and optimization of phase change random access memory (PCRAM) cells. In this article, we report the systematic determination of the speci_c contact resistance (_c) with voltage bias for doped Sb2Te to TiW metal electrodes. These data are reported for both the amorphous and the crystalline state of the PCM

Impact of sidewalls on electrical characterization

In this article the impact of sidewalls, formed during reactive ion etching, on the electrical behavior of thin film structures is presented. The presence of sidewalls was experimentally characterized by sheet resistance measurements on Van der Pauw structures. The effect of these sidewalls on the extraction of specific contact resistance from Cross Bridge Kelvin Resistance (CBKR) structures is discussed

An improved method for determining the inversion layer mobility of electrons in trench MOSFETs

For the first time trench sidewall effective electron mobility (/spl mu//sub eff/) values were determined by using the split capacitance-voltage (CV) method for a large range of transversal effective field (E/sub eff/) from 0.1 up to 1.4 MV/cm. The influences of crystal orientation, doping concentration and, for the first time, temperature were investigated. In conclusion, the results show that (1) the split CV method is an accurate method for determining /spl mu//sub eff/(E/sub eff/) data in trench MOSFETs, (2) the {100} /spl mu//sub eff/ data approach published data of planar MOSFETs for high E/sub eff/ and (3) the mobility behavior can be explained with generally accepted scattering models for the entire range of E/sub eff/. The results are important for the optimization of trench power devices

Electron, ion and neutral temperatures at the magnetic equator

Electron density and electron, ion, and neutral temperature profiles at magnetic equato

On the ability to inhibit thought and action: General and special theories of an act of control.

types: Journal ArticleThis is a postprint of an article published in Journal of Abnormal Psychology © 2014 copyright American Psychological Association. This article may not exactly replicate the final version published in the APA journal. It is not the copy of record. Psychological Review is available online at: http://www.apa.org/pubs/journals/rev/Response inhibition is an important act of control in many domains of psychology and neuroscience. It is often studied in a stop-signal task that requires subjects to inhibit an ongoing action in response to a stop signal. Performance in the stop-signal task is understood as a race between a go process that underlies the action and a stop process that inhibits the action. Responses are inhibited if the stop process finishes before the go process. The finishing time of the stop process is not directly observable; a mathematical model is required to estimate its duration. Logan and Cowan (1984) developed an independent race model that is widely used for this purpose. We present a general race model that extends the independent race model to account for the role of choice in go and stop processes, and a special race model that assumes each runner is a stochastic accumulator governed by a diffusion process. We apply the models to 2 data sets to test assumptions about selective influence of capacity limitations on drift rates and strategies on thresholds, which are largely confirmed. The model provides estimates of distributions of stop-signal response times, which previous models could not estimate. We discuss implications of viewing cognitive control as the result of a repertoire of acts of control tailored to different tasks and situations. (PsycINFO Database Record (c) 2014 APA, all rights reserved)

Modeled and Measured Image-plane Polychromatic Speckle Contrast

The statistical properties of speckle relevant to short- to medium-range (tactical) active tracking involving polychromatic illumination are investigated. A numerical model is developed to allow rapid simulation of speckled images including the speckle contrast reduction effects of illuminator bandwidth, surface slope, and roughness, and the polarization properties of both the source and the reflection. Regarding surface slope (relative orientation of the surface normal and illumination/observation directions), Huntley’s theory for speckle contrast, which employs geometrical approximations to decrease computation time, is modified to increase accuracy by incorporation of a geometrical correction factor and better treatment of roughness and polarization. The resulting model shows excellent agreement with more exact theory over a wide range. An experiment is conducted to validate both the numerical model developed here and existing theory. A diode laser source with coherence length of 259±7  μm is reflected off of a silver-coated diffuse surface. Speckle data are gathered for 16 surface slope angles corresponding to speckle contrast between about 0.55 and 1. Taking the measured data as truth, both equations show error mean and standard deviation of less than 3%. Thus, the theory is validated over the range of this experiment

Electrical characterization of Thin-Film structures with redeposited sidewall

Accurate electrical characterization of test structures and devices requires identification and correction for parasitic current paths in the measurement network. The sidewalls formed during reactive ion etching of thin-film phase-change material layers in argon plasma can result in parasitic current paths in the structures. In this paper, thin-film structures with redeposited sidewalls are realized, and they are experimentally characterized by electrical resistance measurements on van der Pauw test structures. The impact of conducting sidewalls on contact resistance measurements and data extraction from cross-bridge Kelvin resistor structures is discussed. The error introduced in the electrical resistance measurements from these test structures is analytically modeled. The impact on the electrical performance of devices due to the formation of sidewalls is also discussed

Enhanced, Fast-running Scaling Law Model of Thermal Blooming and Turbulence Effects on High Energy Laser Propagation

A new scaling law model is presented to rapidly simulate thermal blooming and turbulence effects on high energy laser propagation, producing results approaching the quality normally only available using wave-optics code, but at much faster speed. The model convolves irradiance patterns originating from two distinct scaling law models, one with a proficiency in thermal blooming effects and the other in turbulence. To underscore the power of the new model, results are verified for typical, realistic scenarios by direct comparison with wave optics simulation