562 research outputs found

    On Baker's explicit abc-conjecture

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    Surface operator content of the A_L face models

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    A set of fixed boundary weights for both the critical dense and dilute A_L face models is constructed from the known boundary weights of the related loop model. The surface operator content and the conformal partition functions then follow from the results obtained via the Bethe equations.Comment: 12 pages, LaTeX, 2 eps figs, Elsevier style files, to appear in the Hans van Leeuwen festschrift (Physica A

    Native Point Defects in yttria as a High-Dielectric-Constant Gate Oxide Material: A First-Principles Study

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    Yttria (Y₂O₃) has become a promising gate oxide material to replace silicon dioxide in metal-oxide-semiconductor (MOS) devices. The characterization of native point defect in Y₂O₃ is essential to understand the behavior of the material. We used the first-principles pseudopotential method to study the electronic structure, defect structure and formation energy of native point defects in Y₂O₃. Vacancies, interstitials and antisites in their relevant charge states are considered. The dominant defect types are identified under different chemical potentials and different Fermi levels. Oxygen vacancies are the dominant defect types under high yttrium chemical potential condition. Lower yttrium chemical potential leads to oxygen interstitials and ultimately yttrium vacancies when Y₂O₃ is used as a high dielectric constant gate oxide material in MOS devices.Singapore-MIT Alliance (SMA

    Dopant Profile Extraction by Inverse Modeling of Scanning Capacitance Microscopy Using Peak dC/dV

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    Scanning capacitance microscopy (SCM) has proven to be successful for junction delineation. However quantitative dopant profile extraction by SCM still remains a difficult challenge, due to limited understanding of relevant physics especially at p-n junction, as well as difficulties to accurately quantify all parameters in modeling. In this paper we present a new procedure, the use of peak dC/dV at every spatial point, for dopant profile extraction. The advantage of such a technique is twofold. First it eliminates problems encountered using a fixed dc bias such as contrast reversal. Second, it also excludes the need to model interface traps. This is because the peak dC/dV value is independent of the presence of interface traps, as demonstrated in our experimental results. Furthermore, based on our understanding of the influence of mobility degradation at p-n junction, we propose that low surface mobility model should be used in simulation so that only the accumulation-to-depletion dC/dV is extracted

    An Energy Dependent Model for Type I Magnetic Contrast in the Scanning Electron Microscope

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    The modelling of the magnetic contrast phenomenon in the scanning electron microscope (SEM) is important in understanding the physics of the contrast mechanism and the associated signal detection. In this paper, we report an improved analytical model for Type I magnetic contrast calculations using an approximate form of the Chung and Everhart secondary electron (SE) energy distribution. Previous studies have neglected this factor by assuming a mono-energetic model in order to simplify the calculations. This new model can be used to study different material specimens by appropriate choice of the work function and field-distance integral. The effect of energy filtering on the Type I magnetic contrast and quality factor can also be studied with the improved model by substituting the low and high energy limits of the filtered SE distribution into the closed-form analytical expressions obtained. Results of the above-mentioned effects and the effect of collector aperturing are reported in this paper using the new improved energy dependent model

    An exact universal amplitude ratio for percolation

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    The universal amplitude ratio R~ξ\tilde{R}_{\xi} for percolation in two dimensions is determined exactly using results for the dilute A model in regime 1, by way of a relationship with the q-state Potts model for q<4.Comment: 5 pages, LaTeX, submitted to J. Phys. A. One paragraph rewritten to correct error

    Monitoring oxide quality using the spread of the dC/dV peak in scanning capacitance microscopy measurements

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    This article proposes a method for evaluating the quality of the overlying oxide on samples used in scanning capacitance microscopy (SCM) dopant profile extraction. The method can also be used generally as a convenient in-process method for monitoring oxide quality directly after the oxidation process without prior metallization of the oxide-semiconductor sample. The spread of the differential capacitance characteristic (dC/dV versus V plot), characterized using its full width at half maximum (FWHM), was found to be strongly dependent on the interface trap density as a consequence of the stretch-out effect of interface traps on the capacitance-voltage (C-V) curve. Results show that the FWHM of the dC/dV characteristic is a sensitive monitor of oxide quality (in terms of interface trap density) as it is not complicated by localized oxide charging effects as in the case of the SCM probe tip voltage corresponding to maximum dC/dV. The magnitude of the dC/dV peak, at any given surface potential, was also found to be independent of the interface traps and only dependent on the substrate dopant concentration, which makes SCM dopant profile extraction possible

    Consistent superconformal boundary states

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    We propose a supersymmetric generalization of Cardy's equation for consistent N=1 superconformal boundary states. We solve this equation for the superconformal minimal models SM(p/p+2) with p odd, and thereby provide a classification of the possible superconformal boundary conditions. In addition to the Neveu-Schwarz (NS) and Ramond (R) boundary states, there are NS~ states. The NS and NS~ boundary states are related by a Z_2 "spin-reversal" transformation. We treat the tricritical Ising model as an example, and in an appendix we discuss the (non-superconformal) case of the Ising model.Comment: 23 pages, LaTeX; amssymb, epsf, 1 eps figure; v2: references adde

    A staged approach with vincristine, adriamycin, and dexamethasone followed by bortezomib, thalidomide, and dexamethasone before autologous hematopoietic stem cell transplantation in the treatment of newly diagnosed multiple myeloma

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    Bortezomib-based regimens have significant activities in multiple myeloma (MM). In this study, we tested the efficacy of a total therapy with a staged approach where newly diagnosed MM patients received vincristine/adriamycin/dexamethsone (VAD). VAD-sensitive patients (≥75% paraprotein reduction) received autologous hematopoietic stem cell transplantation (auto-HSCT), whereas less VAD-sensitive patients (<75% paraprotein reduction) received bortezomib/thalidomide/dexamethasone (VTD) for further cytoreduction prior to auto-HSCT. On an intention-to-treat analysis, a progressive increase of complete remission (CR) rates was observed, with cumulative CR rates of 48% after HSCT. Seven patients progressed leading to three fatalities, of which two had central nervous system disease. The 3-year overall survival and event-free survival were 75.1% and 48.3%, respectively. Six patients developed oligoclonal reconstitution with new paraproteins. In the absence of anticoagulant prophylaxis, no patients developed deep vein thrombosis. The staged application of VAD+/–VTD/auto-HSCT resulted in an appreciable response rate and promising survivals. Our approach reduced the use of bortezomib without compromising the ultimate CR rate and is of financial significance for less affluent communities
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