Precipitation fields in Poland associated with van Bebber’s Vb cyclones

artykuł recenzowanyThe article presents the course of the average annual trajectory of van Bebber’s Vb cyclones. The most rainfall-efficient section of the trajectory, i.e. the occurrence region of cyclones which produce the highest precipitation in Poland, was delimited. A map of average daily precipitation totals associated with Vb lows was constructed as well as a map indicating the maximum rainfall i.e. the highest sum of daily precipitation at the weather station in the period 1958‒2008 associated with the Vb cyclones situated close to the most rainfall-efficient segment of the trajectory. Vb route begins at the Balearic Sea and ends over southern Finland. The highest rainfall in Poland is associated with lows situated in the vicinity of the middle section of the trajectory – over eastern Hungary, western Romania or southern Slovakia. The highest average amount of rainfall can be observed in south-eastern Poland, particularly in the Żywiec dale, in the Tatras, and over the Lublin Upland. Maximum daily rainfall associated with Vb cyclones occurred on Śnieżka peak and reached 129.2 mm.W artykule przedstawiono przebieg średniej trajektorii niżów Vb van Bebbera w skali roku. Wyznaczono najbardziej opadotwórczy odcinek trajektorii, tzn. region występowania cyklonów, które wywołują najwyższe opady w Polsce. Skonstruowano mapę średnich sum dobowych opadu związanych z niżami Vb oraz mapę opadów maksymalnych informującą o tym, jaka była najwyższa wartość opadu w danej stacji meteorologicznej w okresie 1958‒2008 związana z wystąpieniem niżu Vb na wyróżnionym – najbardziej opadotwórczym – odcinku trajektorii. Szlak Vb rozpoczyna się na Morzu Balearskim, a kończy nad południową Finlandią. Najwyższe opady w Polsce związane są z niżami usytuowanymi w sąsiedztwie środkowego odcinka trajektorii – nad wschodnimi Węgrami, zachodnią Rumunią lub południową Słowacją. Najwyższe średnie sumy opadów można zaobserwować w Polsce Południowo-Wschodniej. Maksima występują w Kotlinie Żywieckiej, w Tatrach i na Wyżynie Lubelskiej. Maksymalny opad dobowy związany z niżem Vb wystąpił na Śnieżce i osiągnął wartość 129,2 mm.NCN: grant N N30631373

Influence of multiple cleaning on the detection capabilities of ISFET structures

The method of cleaning the ISFET structures after application of a biological substance was developed. There are few references in the literature to cleaning methods of this type of structure for biological applications, but they are relatively complex and difficult to automate. We decided to use resources commonly available in technological laboratories and methods that could be relatively easily automated, which would enable the full potential of ISFET transistors to be used. During the experiments, both acetone and deionized water were tested. The cleaning method was modified and it was checked whether it is possible to use such a method on one transistor more than once and how it affects the transistor's detection capabilities. We managed to obtain an effective method of cleaning ISFETs from biological substances. This method does not allow for obtaining exactly the same state as the original state of the transistor, but it ensures its correct operation and determining the influence of the tested biological substance on the transistor based on the results

Dyskusja przed Narodowym Kongresem Nauki – refleksje

The paper presents an analysis of selected topics discussed in the debates concerning science and higher education in the context of the draft law, called Law 2.0. In particular, the author selected the topics that dominated during the sessions of nine conferences organized before the National Congress of Science and council meetings of this Congress. Topics and their analysis are, of course, the point of view of the author and have been collected in the form of five reflections. Several proposals for detailed solutions were also presented – one in the form of a supplement to the study.W opracowaniu przedstawiono analizę wybranych tematów poruszanych w dyskusjach dotyczących nauki i szkolnictwa wyższego w kontekście przygotowywanej ustawy – zwanej Ustawą 2.0. Autor wybrał te tematy, które dominowały w trakcie obrad podczas dziewięciu konferencji zorganizowanych przed Narodowym Kongresem Nauki i posiedzeń Rady tego Kongresu. Tematy i ich analiza są punktem widzenia autora i zostały zebrane w formę pięciu refleksji. Przedstawiono również kilka propozycji szczegółowych rozwiązań – jeden w postaci dodatku do opracowania

Modelling and Simulation of Normally-off AlGaN/GaN MOS-HEMTs

The article presents the results of modelling and simulation of normally-off AlGaN/GaN MOS-HEMT transistors. The effect of the resistivity of the GaN:C layer, the channel mobility and the use of high- dielectrics on the electrical characteristics of the transistor has been examined. It has been shown that a low leakage current of less than 10-6 A/mm can be achieved for the acceptor dopant concentration at the level of 5x1015 cm-3. The limitation of the maximum on-state current due to the low carrier channel mobility has been shown. It has also been demonstrated that the use of HfO2, instead of SiO2, as a gate dielectric increases on-state current above 0.7A/mm and reduces the negative influence of the charge accumulated in the dielectric layer

Technology of MISFET with SiO2/BaTiO3 System as a Gate Insulator, Journal of Telecommunications and Information Technology, 2009, nr 4

The properties of barium titanate (BaTiO3, BT), such as high dielectric constant and resistivity, allow it to find numerous applications in the field of microelectronics. In this work silicon metal-insulator-semiconductor field effect transistor (MISFET) structures with BaTiO3 thin films (containing La2O3 admixture) acting as gate insulator were investigated. The films were produced by means of radio frequency plasma sputtering (RF PS) of sintered BaTiO3 + La2O3 (2% wt.) target. In the paper transfer and output I−V, transconductance and output conductance characteristics of the obtained transistors are presented and discussed. Basic parameters of these devices, such as threshold voltage (VTH) are determined and discussed

Correlation between electric parameters of carbon layers and their capacity for field emission, Journal of Telecommunications and Information Technology, 2007, nr 3

The aim of this work is to study a possibility of field electron emission from carbon layers produced by radio frequency plasma chemical vapor deposition (RF PCVD) method. A correlation between electric parameters of the layers and the ability to produce electron emission is also studied through material (AFM) and electrical (C-V, I-V) characterization of the obtained layers. It is demonstrated that the layers deposited with the highest self-bias exhibit the highest capacity for electron emission

Influence of the deposition process parameters on electronic properties of BN films obtained by means of RF PACVD, Journal of Telecommunications and Information Technology, 2007, nr 3

This work presents results of investigations of electronic properties of undoped boron nitride (BN) films produced on Si substrates in the course of radio frequency (rf) PACVD process with boron triethyl (C2H5)3B as the boron source. The influence of the deposition process parameters on thickness and electronic properties (resistivity r, dielectric strength EBR) of BN films based on ellipsometry and I-V curve measurements at room temperature is studied. The obtained results show that proper selection of deposition process parameters allows BN layers with the required thickness and advantageous values of r and EBR to be fabricated. BN becomes therefore an interesting material for microelectronics applications

Reliability of MIS transistors with plasma deposited Al2O3 gate dielectric film, Journal of Telecommunications and Information Technology, 2001, nr 1

The paper presents the parameters of MIS transistors with plasma deposited thin film aluminum oxide gate insulator. Al2O3 films were synthesized by means of the lowenergy, low-temperature reactive pulse plasma (RPP) method. Investigated transistors, with channel width to length (W/L) ratios of 200/10 [mm/mm] and 200/20 [mm/mm] were manufactured in a standard microelectronic technological laboratory. In order to determine the most important parameters of produced devices there were measured their electrical characteristics. The distribution of the threshold voltage values was studied on a representative set of over two hundred structures