Electric field assisted annealing and formation of prominent deep-level defect in ion-implanted n-type 4H-SiC

High-purity and low-doped n -type epitaxial layers of 4H-SiC have been implanted with N and C ions by using energies in the MeV range and doses from 2×10⁸to1×10⁹cm⁻² . Postimplant annealing was performed at 1100°C prior to sample analysis by deep-level transient spectroscopy (DLTS). A drastic and irreversible instability of the prominent EH7 deep-level defect occurs during the first DLTS temperature scan because of the electric field applied during the measurements. Depending on the implanted species, EH7 can decrease (N implants) as well as increase (C implants) in strength and the effect is attributed to charge-state controlled annealing and formation processes of EH7. The origin of EH7 is discussed and the experimental data support a model invoking interstitial C atoms.The authors thank the Australian Research Council and Norwegian Research Council

Acceptor-like deep level defects in ion-implanted ZnO

N-type ZnO samples have been implanted with MeV Zn⁺ ions at room temperature to doses between 1×10⁸ and 2×10¹⁰cm⁻², and the defect evolution has been studied by capacitance-voltage and deep level transient spectroscopy measurements. The results show a dose dependent compensation by acceptor-like defects along the implantation depth profile, and at least four ion-induced deep-level defects arise, where two levels with energy positions of 1.06 and 1.2 eV below the conduction band increase linearly with ion dose and are attributed to intrinsic defects. Moreover, a re-distribution of defects as a function of depth is observed already at temperatures below 400 K.This work was supported by the Norwegian Research Council through the Frienergi program and the Australian Research Council through the Discovery projects program

Effect of turbulence on collisional growth of cloud droplets

We investigate the effect of turbulence on the collisional growth of um-sized droplets through high- resolution numerical simulations with well resolved Kolmogorov scales, assuming a collision and coalescence efficiency of unity. The droplet dynamics and collisions are approximated using a superparticle approach. In the absence of gravity, we show that the time evolution of the shape of the droplet-size distribution due to turbulence-induced collisions depends strongly on the turbulent energy-dissipation rate, but only weakly on the Reynolds number. This can be explained through the energy dissipation rate dependence of the mean collision rate described by the Saffman-Turner collision model. Consistent with the Saffman-Turner collision model and its extensions, the collision rate increases as the square root of the energy dissipation rate even when coalescence is invoked. The size distribution exhibits power law behavior with a slope of -3.7 between a maximum at approximately 10 um up to about 40 um. When gravity is invoked, turbulence is found to dominate the time evolution of an initially monodisperse droplet distribution at early times. At later times, however, gravity takes over and dominates the collisional growth. We find that the formation of large droplets is very sensitive to the turbulent energy dissipation rate. This is due to the fact that turbulence enhances the collisional growth between similar sized droplets at the early stage of raindrop formation. The mean collision rate grows exponentially, which is consistent with the theoretical prediction of the continuous collisional growth even when turbulence-generated collisions are invoked. This consistency only reflects the mean effect of turbulence on collisional growth

Journal Staff

The aluminum–zinc-vacancy (Al Zn −V Zn ) complex is identified as one of the dominant defects in Al-containing n -type ZnO after electron irradiation at room temperature with energies above 0.8 MeV. The complex is energetically favorable over the isolated V Zn , binding more than 90% of the stable V Zn ’s generated by the irradiation. It acts as a deep acceptor with the (0/− ) energy level located at approximately 1 eV above the valence band. Such a complex is concluded to be a defect of crucial and general importance that limits the n -type doping efficiency by complex formation with donors, thereby literally removing the donors, as well as by charge compensation

Lagrangian supersaturation fluctuations at the cloud edge

Evaporation of cloud droplets accelerates when turbulence mixes dry air into the cloud, affecting droplet-size distributions in atmospheric clouds, combustion sprays, and jets of exhaled droplets. The challenge is to model local correlations between droplet numbers, sizes, and supersaturation, which determine supersaturation fluctuations along droplet paths (Lagrangian fluctuations). We derived a statistical model that accounts for these correlations. Its predictions are in quantitative agreement with results of direct numerical simulations, and it explains the key mechanisms at play.Comment: 6 pages, 3 figures, supplemental materia

Model Data Fusion: developing Bayesian inversion to constrain equilibrium and mode structure

Recently, a new probabilistic "data fusion" framework based on Bayesian principles has been developed on JET and W7-AS. The Bayesian analysis framework folds in uncertainties and inter-dependencies in the diagnostic data and signal forward-models, together with prior knowledge of the state of the plasma, to yield predictions of internal magnetic structure. A feature of the framework, known as MINERVA (J. Svensson, A. Werner, Plasma Physics and Controlled Fusion 50, 085022, 2008), is the inference of magnetic flux surfaces without the use of a force balance model. We discuss results from a new project to develop Bayesian inversion tools that aim to (1) distinguish between competing equilibrium theories, which capture different physics, using the MAST spherical tokamak; and (2) test the predictions of MHD theory, particularly mode structure, using the H-1 Heliac.Comment: submitted to Journal of Plasma Fusion Research 10/11/200

Effect of crystal orientation on the implant profile of 60 keV Al into 4H-SiC crystals

The effect of crystal orientation on the implant profile of 60 keV Al into 4H-SiC crystals was analyzed. The [112̄0] channel was found to exhibit the deepest channeling with a maximum penetration depth 45 times greater than the projected range of the ranThe authors acknowledge the STINT ~Swedish Foundation for international cooperation in research and higher education! program and Australian Research Council for support under the Discovery grant and fellowship program

Truthful Facility Assignment with Resource Augmentation: An Exact Analysis of Serial Dictatorship

We study the truthful facility assignment problem, where a set of agents with private most-preferred points on a metric space are assigned to facilities that lie on the metric space, under capacity constraints on the facilities. The goal is to produce such an assignment that minimizes the social cost, i.e., the total distance between the most-preferred points of the agents and their corresponding facilities in the assignment, under the constraint of truthfulness, which ensures that agents do not misreport their most-preferred points. We propose a resource augmentation framework, where a truthful mechanism is evaluated by its worst-case performance on an instance with enhanced facility capacities against the optimal mechanism on the same instance with the original capacities. We study a very well-known mechanism, Serial Dictatorship, and provide an exact analysis of its performance. Although Serial Dictatorship is a purely combinatorial mechanism, our analysis uses linear programming; a linear program expresses its greedy nature as well as the structure of the input, and finds the input instance that enforces the mechanism have its worst-case performance. Bounding the objective of the linear program using duality arguments allows us to compute tight bounds on the approximation ratio. Among other results, we prove that Serial Dictatorship has approximation ratio $g/(g-2)$ when the capacities are multiplied by any integer $g \geq 3$. Our results suggest that even a limited augmentation of the resources can have wondrous effects on the performance of the mechanism and in particular, the approximation ratio goes to 1 as the augmentation factor becomes large. We complement our results with bounds on the approximation ratio of Random Serial Dictatorship, the randomized version of Serial Dictatorship, when there is no resource augmentation