Mesoscopic mechanism of the domain wall interaction with elastic defects in ferroelectrics

The role of elastic defects on the kinetics of 180-degree uncharged ferroelectric domain wall motion is explored using continuum time-dependent LGD equation with elastic dipole coupling. In one dimensional case, ripples, steps and oscillations of the domain wall velocity appear due to the wall-defect interactions. While the defects do not affect the limiting-wall velocity vs. field dependence, they result in the minimal threshold field required to activate the wall motions. The analytical expressions for the threshold field are derived and the latter is shown to be much smaller than the thermodynamic coercive field. The threshold field is linearly proportional to the concentration of defects and non-monotonically depends on the average distance between them. The obtained results provide the insight into the mesoscopic mechanism of the domain wall pinning by elastic defects in ferroelectrics.Comment: 18 pages, 6 figures, 1 appendi

Fixed Volume Effect on Polar Properties and Phase Diagrams of Ferroelectric Semi-ellipsoidal Nanoparticles

For advanced applications in modern industry it is very important to reduce the volume of ferroelectric nanoparticles without serious deterioration of their polar properties. In many practically important cases fixed volume (rather than fixed size) corresponds to realistic technological conditions of nanoparticles fabrication. The letter is focused on the theoretical study of the behavior of ferroelectric polarization, paramagnetoelectric coefficient and phase diagrams of semi-ellipsoidal nanoparticles with fixed volume V. Our approach combines the Landau-Ginzburg-Devonshire phenomenology, classical electrostatics and elasticity theory. Our results show that the size effects of the phase diagrams and polarization of semi-ellipsoidal BiFeO3 nanoparticles nontrivially depends on V. These findings provide a path to optimize the polar properties of nanoparticles by controlling their phase diagrams at a fixed volume.Comment: 15 pages, 5 figures, we added the section IV. Paramagnetoelectric (PME) coefficient at fixed volume in this version and changed title and abstract accordingl

Finite size and intrinsic field effect on the polar-active properties of the ferroelectric-semiconductor heterostructures

Using Landau-Ginzburg-Devonshire approach we calculated the equilibrium distributions of electric field, polarization and space charge in the ferroelectric-semiconductor heterostructures containing proper or incipient ferroelectric thin films. The role of the polarization gradient and intrinsic surface energy, interface dipoles and free charges on polarization dynamics are specifically explored. The intrinsic field effects, which originated at the ferroelectric-semiconductor interface, lead to the surface band bending and result into the formation of depletion space-charge layer near the semiconductor surface. During the local polarization reversal (caused by the inhomogeneous electric field induced by the nanosized tip of the Scanning Probe Microscope (SPM) probe) the thickness and charge of the interface layer drastically changes, it particular the sign of the screening carriers is determined by the polarization direction. Obtained analytical solutions could be extended to analyze polarization-mediated electronic transport.Comment: 35 pages, 12 figures, 1 table, 2 appendices, to be submitted to Phys. Rev.

Static conductivity of charged domain wall in uniaxial ferroelectric-semiconductors

Using Landau-Ginzburg-Devonshire theory we calculated numerically the static conductivity of both inclined and counter domain walls in the uniaxial ferroelectrics-semiconductors of n-type. We used the effective mass approximation for the electron and holes density of states, which is valid at arbitrary distance from the domain wall. Due to the electrons accumulation, the static conductivity drastically increases at the inclined head-to-head wall by 1 order of magnitude for small incline angles theta pi/40 by up 3 orders of magnitude for the counter domain wall (theta=pi/2). Two separate regions of the space charge accumulation exist across an inclined tail-to-tail wall: the thin region in the immediate vicinity of the wall with accumulated mobile holes and the much wider region with ionized donors. The conductivity across the tail-to-tail wall is at least an order of magnitude smaller than the one of the head-to-head wall due to the low mobility of holes, which are improper carries. The results are in qualitative agreement with recent experimental data for LiNbO3 doped with MgO.Comment: 20 pages, 6 figures, 1 appendi

Thermodynamics of nanodomain formation and breakdown in Scanning Probe Microscopy: Landau-Ginzburg-Devonshire approach

Thermodynamics of tip-induced nanodomain formation in scanning probe microscopy of ferroelectric films and crystals is studied using the Landau-Ginzburg-Devonshire phenomenological approach. The local redistribution of polarization induced by the biased probe apex is analyzed including the effects of polarization gradients, field dependence of dielectric properties, intrinsic domain wall width, and film thickness. The polarization distribution inside subcritical nucleus of the domain preceding the nucleation event is very smooth and localized below the probe, and the electrostatic field distribution is dominated by the tip. In contrast, polarization distribution inside the stable domain is rectangular-like, and the associated electrostatic fields clearly illustrate the presence of tip-induced and depolarization field components. The calculated coercive biases of domain formation are in a good agreement with available experimental results for typical ferroelectric materials. The microscopic origin of the observed domain tip elongation in the region where the probe electric field is much smaller than the intrinsic coercive field is the positive depolarization field in front of the moving counter domain wall. For infinitely thin domain walls local domain breakdown through the sample depth appears. The results obtained here are complementary to the Landauer-Molotskii energetic approach.Comment: 35 pages, 8 figures, suplementary attached, to be submitted to Phys. Rev.

Domain wall conduction in multiaxial ferroelectrics

The conductance of domain wall structures consisting of either stripes or cylindrical domains in multi-axial ferroelectric-semiconductors is analyzed. The effects of the domain size, wall tilt and curvature, on charge accumulation, are analyzed using the Landau-Ginsburg Devonshire (LGD) theory for polarization combined with Poisson equation for charge distributions. Both the classical ferroelectric parameters including expansion coefficients in 2-4-6 Landau potential and gradient terms, as well as flexoelectric coupling, inhomogeneous elastic strains and electrostriction are included in the present analysis. Spatial distributions of the ionized donors, free electrons and holes were found self-consistently using the effective mass approximation for the respective densities of states. The proximity and size effect of the electron and donor accumulation/depletion by thin stripe domains and cylindrical nanodomains are revealed. In contrast to thick domain stripes and thicker cylindrical domains, in which the carrier accumulation (and so the static conductivity) sharply increases at the domain walls only, small nanodomains of radius less then 5-10 correlation length appeared conducting across entire cross-section. Implications of such conductive nanosized channels may be promising for nanoelectronics.Comment: 39 pages, 11 figures, 3 tables, 4 appendice

Piezoresponse Force Spectroscopy of Ferroelectric Materials

Piezoresponse Force Spectroscopy (PFS) has emerged as a powerful technique for probing highly localized switching behavior and the role of microstructure and defects on switching. The application of a dc bias to a scanning probe microscope tip in contact with a ferroelectric surface results in the nucleation and growth of a ferroelectric domain below the tip, resulting in changes in local electromechanical response. Resulting hysteresis loops contains information on local ferroelectric switching behavior. The signal in PFS is the convolution of the volume of the nascent domain and the probing volume of the tip. Here, we analyze the signal formation mechanism in PFS by deriving the main parameters of domain nucleation in a semi-infinite material and establishing the relationships between domain parameters and PFM signal using a linear Greens function theory. The effect of surface screening and finite Debye length on the switching behavior is established. In particular, we predict that the critical nucleus size in PFM is controlled by the surface screening mechanism and in the absence of screening, tip-induced switching is impossible. Future prospects of PFS to study domain nucleation in the vicinity of defects, local switching centers in ferroelectrics, and unusual polarization states in low-dimensional ferroelectrics are discussed.Comment: 74 pages, 18 figures, 3 appendices, sent to Phys. Rev.

Period changes in six semi-detached Algol-type binaries

Six semi-detached Algol-type binaries lacking a period analysis were chosen to test for a presence of a third body. The O-C diagrams of these binaries were analyzed with the least-squares method by using all available times of minima. Also fourteen new minima, obtained from our observations, were included in the present research. The light-time effect was adopted as a main factor for the detailed description of the long-term period changes. Third bodies were found with orbital periods from 46 up to 84 years, and eccentricities from 0.0 to 0.78 for the selected binaries. The mass functions and the minimal masses of such bodies were also calculated.Comment: 14 pages, 8 figure