An Android Application for Blind: Third Eye

With advances in new technologies, mobile devices have grown in popularity to become one of the most common consumer devices. Many of us can make a call or send a message at anytime from anywhere. As our society farther expands, there have been many supports for second-class citizens, disabled. There are a lot of visually impaired persons in and round the world. Physical disability of blind people makes their life difficult. They find themselveschallenging to meet daily challenges independently. One amongst several supports that are urgent is that the guarantee of quality for blind individuals.Several auxiliary tools are available to help blind people.But these could not able to help the user with basic mobile phone features. The main aim of this paper is to help the blind person to use basic features of smart phones by audible feedback and a single shake on this application identifies the location of place through GPS and sends a message comprising this location URL to the registered contacts and also make a call on the first registered contact to help the one in dangerous situations. Continuous location trailing info via SMS helps to seek out the situation of the victim quickly and might be saved safely

Short-Term History Based Authentication Using Smartphone Sensors and Apps

Secrete-QA could be a security primarily based application. A security question is asked once the user fails to login or forgets his/her password and to reset the password. A security question could be a secondary authentication, but these queries is guessed simply by an admirer or exposed to a strangers who might recognize our personal info like friends, relations or those that will access our personal info through public on-line tools. We will build these security queries additional customized by using the privilege of accessing our Smartphone sensors and apps while not affecting the user’s privacy. Three types of questions are generated that is, Yes/No questions, Multiple Choice questions and WH questions. An android app is created for the frequent updating of the Smartphone data and questions are asked in the web part using this updated data.The questions are generated by considering the legacy apps, GPS, calendar, app details etc.These have the mostmemorability to the users and high robustness to attacks

Android Application for Efficient Management of Transport System

The construct behind our plan is to implement an android application for the economical management of college bus system. Hence by developing an application like this the overhead along with Bus Management System can get a larger relief. Thus, this application will provide information regarding the whole details of the bus system like Bus Root, Bus Number, Student details, bus Time etc. by storing onto an information. And also this can provide an extra feature of message delivery system for the users (in case if there is delay for the bus) as well as for the management over some circumstances, in addition to that bus locating facility for the passengers. The key advantage is seems to be a gift of modern way of practice which is not common at present

Radiation Hardness of 4H-SiC Devices and Circuits

Advances in space and nuclear technologies are limited by the capabilities of the conventional silicon (Si) electronics. Hence, there is a need to explore materials beyond Si with enhanced properties to operate in extreme environments. In this regards, silicon carbide (4H-SiC), a wide bandgap semiconductor, provides suitable solutions. In this thesis, radiation effects of 4H-SiC bipolar devices, circuits and dielectrics for SiC are investigated under various radiation types. We have demonstrated for the first time the radiation hardness of 4H-SiC logic circuits exposed to extremely high doses (332 Mrad) of gamma radiation and protons. Comparisons with previously available literature show that our 4H-SiC bipolar junction transistor (BJT) is 2 orders of magnitude more tolerant under gamma radiation to existing Si-technology. 4H-SiC devices and circuits irradiated with 3 MeV protons show about one order of magnitude higher tolerance in comparison to Si. Numerical simulations of the device showed that the ionization is most influential in the degradation process by introducing interface states and oxide charges that lower the current gain. Due to the gain reduction of the BJT, the voltage reference of the logic circuit has been affected and this, in turn, degrades the voltage transfer characteristics of the OR-NOR gates. One of the key advantages of 4H-SiC over other wide bandgap materials is the possibility to thermally grow silicon oxide (SiO2) and process device in line with advanced silicon technology. However, there are still questions about the reliability of SiC/SiO2 interface under high power, high temperature and radiation rich environments. In this regard, aluminium oxide (Al2O3), a chemically and thermally stable dielectric, has been investigated. It has been shown that the surface cleaning treatment prior to deposition of a dielectric layer together with the post dielectric annealing has a crucial effect on interface and oxide quality. We have demonstrated a new method to evaluate the interface between dielectric/4H-SiC utilizing an optical free carrier absorption technique to quantitative measure the charge carrier trapping dynamics. The radiation hardness of Al2O3/4H-SiC is demonstrated and the data suggests that Al2O3 is better choice of dielectric for devices in radiation rich applications.QC 20170119</p

A comparison of free carrier absorption and capacitance voltage methods for interface traps measurements

This project aims at establishing a new method to characterize the interface between 4H-SiC and passivating dielectric layers. The investigations are made on metal-oxide-semiconductor (MOS) test structures. The oxides are made of Al2O3, deposited by atomic layer deposition (ALD), and SiO2, deposited by plasma-enhanced chemical vapour deposition (PECVD) and the semiconductor is lowly doped 4H-SiC n-type epitaxial layers. These structures have been exposed to different fluencies of Ar ion irradiation to induce damage at the interface and then measured by well-established electrical techniques, as well as the new method utilizing optical free carrier absorption (FCA) technique to assess the interface traps. We have furthermore developed an analytical tool using Matlab that can extract surface recombination velocity (SRV) from the optical data. This tool is developed for an idealized epi-layer between two surfaces, but could also be applied, for instance, to the region between the emitter and base contacts on SiC mesa etched BJT’s. First, optical free carrier absorption (FCA) measurements are carried out to measure the effective lifetimes in the structures. The data obtained from FCA is then fitted with the analytical tool and SRVs, for samples with both types of dielectrics with various Ar ion fluencies, are extracted. Standard electrical measurements using capacitance-voltage (CV) measurements are also undertaken and the density of interface traps (Dit) is extracted using the Terman method. Extracted SRV values are then compared to Ditvalues. It is observed that SiO2 samples show a large rise of SRVs, from 0.5x104 cm/s for a reference sample to 8x104 cm/s for a fluence of 1x1012 cm-2, whereas Al2O3 samples show more stable SRV, changing from 3x104 cm/s for the un-irradiated reference sample to 6x104 cm/s for a fluence of 1x1012 cm-2. A very similar trend is observed for Dit values extracted from CV measurements and it can therefore be concluded that the FCA method is very suitable for characterization of the interface, and together with CV, it should be possible to obtain quantitative values on charge carrier trapping dynamics