Analisis Perhitungan Bagi Hasil Mudharabah Tabungan pada (Studi Kasus) PT. Bank Pembiayaan Rakyat Syariah (BPRS)Harta Insan Karimah (HIK) Makassar

This research is a qualitative descriptive study. by collecting descriptive data as outlined in the form of reports and descriptions. Data is obtained by approaching or documenting archives, documents, records or everything needed for this research. Then the data will be analyzed with qualitative analysis. The data that has been obtained will be validated by using the triangulation method, which is checking data from various sources in various ways, and at various times. There are two triangulation techniques namely source triangulation and technical triangulation. The results of the research conducted at BPRS HIK Makassar showed the mechanism for calculating the profit sharing system used using system revenue sharing with a ratio of 70:30. The revenue sharing system applies to the bank income that will be distributed calculated based on gross income. In BPRS HIK Makassar the Revenue sharing system mechanism is used by way of sharing the benefits of fund management carried out by the Bank before deducting operational costs or profit sharing calculated from gross profit / total income and using mudharabah mutlaqah and mudharabah muqayyadah contracts. So the revenue sharing system at BPRS HIK Makassar is in accordance with the National Shari'ah Council fatwa No: 02/DSNMUI/IV/2000 regarding the general provisions of savings based on Mudharabah

Electrical characteristics of amorphous iron-tungsten contacts on silicon

The electrical characteristics of amorphous Fe-W contacts have been determined on both p-type and n-type silicon. The amorphous films were obtained by cosputtering from a composite target. Contact resistivities, pc=1×10^−7 and pc=2.8×10^−6, were measured on n+ and p+ silicon, respectively. These values remain constant after thermal treatment up to at least 500°C. A barrier height, φBn=0.61 V, was measured on n-type silicon

Compensating impurity effect on epitaxial regrowth rate of amorphized Si

The epitaxial regrowth of ion-implanted amorphous layers on Si with partly compensated doping profiles of 11B, 75As, and 31P was studied. Single implants of these impurities are found to increase the regrowth rate at 475 and 500°C. The compensated layers with equal concentrations of 11B and 31P or 11B and 75As show a strong decrease of the regrowth whereas for the layers with overlapping 75As and 31P profiles no compensation has been found

Anatomical characterization of the growth of storage roots of Peruvian sweet potatoes (Ipomoea batatas (L.) Lam., Convolvulaceae)

La caracterización anatómica del desarrollo de la raíz reservante fue llevada a cabo en tres genotipos de camotes. En los estadios iniciales se encontraron diferencias en el desarrollo del xilema primario, incluyendo la formación de un parénquima medular. La actividad cambial secundaria contribuyó en gran medida al desarrollo del parénquima reservante, determinando un arreglo diferencial de los haces vasculares. Así mismo, fueron hallados granos simples y compuestos de almidón, siendo las dimensiones de los primeros asociadas a las mayores dimensiones celulares del parénquima. Uno de los genotipos evaluados presentó altos valores en el espesor del súber y granos de almidón (123,9 µm y 29,5 µm respectivamente). Se sugiere usar estas características como parámetros en la selección de genotipos de camote.The anatomical characterization of the development of the storage root was carried out in three of sweet potato genotypes. In the initial stages differences were found in the development of the primary xylem, including the formation of a medullary parenchyma. The secondary cambial activity contributed to a great extent to the development of the storage parenchyma, determined a differential arrangement of the vascular bundles. Also simple and compound starch grains were found and the dimensions of the first were associated to the bigger size of the parenchyma. One of the genotypes presented high values in the thickness of the phellern and starch grains (123,9 µm and 29,5 µm respectively). These characteristics are suggested as parameters in the selection of sweet potato genotypes

Reaction of amorphous Ni-W and Ni-N-W films with substrate silicon

Amorphous films of Ni-W and Ni-N-W were deposited on single-crystal silicon with discharge gases of Ar or Ar+N2 by rf cosputtering of Ni and W. The reaction of these Ni-W and Ni-N-W films with the Si substrate were studied in the temperature range of 450–750 °C by a combination of backscattering spectrometry, x-ray diffraction, cross-sectional transmission electron microscopy, and resistivity measurements. Films with composition Ni36W64 are stable below 500 °C. NiSi and NiSi2 form at 500 °C, and WSi2 forms rapidly in the temperature range of 625–650 °C. The nickel silicide forms adjacent to and within the silicon, while the outer layer becomes a mixture of WSi2 and NiSi2. The morphologies of the reacted layers are revealed by cross-sectional transmission electron microscopy. The crystallization temperature of amorphous Ni36W64 films on SiO2 is near 650 °C also. Adding nitrogen to form amorphous Ni30N21W49 films lowers the crystallization temperature, but raises the reaction temperature with Si to 750 °C

Substrate orientation dependence of enhanced epitaxial regrowth of silicon

This work extends the study of dopant-enhanced epitaxial regrowth rate of amorphized Si from the to the and orientations of Si. Boron and phosphorus dopants are considered. The annealing temperatures are 500 and 550 °C. Phosphorus enhances the growth rates in all three orientations by a constant factor of 8.1±0.9. Boron produces a higher enhancement factor of 12.2±1.2, except in the case of . Implications of the results on various growth models are considered. The crystalline quality of regrown layers is improved in the doped samples

Poster:Discovering requirements of behaviour change software systems from negative user experience

Behavior Change Software systems (BCSSs) have shown promising outcomes in terms of promoting healthy behaviors. However, a negative User Experience (UX) can be induced by BCSS if designers do not have clear understanding of the requirements that factually help in changing the user behavior that achieves a sustainability goal. In order to get insights into how to discover such sustainability requirements, we propose a discovery approach, whose emphasis is placed on negative UX assessed through attitudes and behaviors expressed by users due to the lack of fulfillment of actual user needs. The approach is tested on existing software systems designed for preventing or reducing Repetitive Strain Injury as a particular category of BCSS. Twelve requirements that contribute to social sustainability were discovered

"Earth observation for land-atmosphere interaction science", Preface

Non peer reviewe

Influence of F and Cl on the recrystallization of ion-implanted amorphous Si

The effect of fluorine and chlorine implantation on the solid-phase epitaxial regrowth of amorphized Si was studied in intrinsic and heavily boron doped material. Annealings were performed at 500 and 600°C. Both F and Cl retard the regrowth rate at 500°C. The growth rates are much faster in B-doped than in undoped Si. Complete regrowth in B-doped Si is obtained for all investigated doses of fluorine up to 5×10^15 F/cm^2 at 600°C for 30 min. The highest dose of chlorine (5×10^15 Cl/cm^2) stops the regrowth at this temperature