Optimization of InP APDs for high-speed lightwave systems

Calculations based on a rigorous analytical model are carried out to optimize the width of the indium phosphide avalanche region in high-speed direct-detection avalanche photodiode-based optical receivers. The model includes the effects of intersymbol interference (ISI), tunneling current, avalanche noise, and its correlation with the stochastic avalanche duration, as well as dead space. A minimum receiver sensitivity of -28 dBm is predicted at an optimal width of 0.18 mu m and an optimal gain of approximately 13, for a 10 Gb/s communication system, assuming a Johnson noise level of 629 noise electrons per bit. The interplay among the factors controlling the optimum sensitivity is confirmed. Results show that for a given transmission speed, as the device width decreases below an optimum value, increased tunneling current outweighs avalanche noise reduction due to dead space, resulting in an increase in receiver sensitivity. As the device width increases above its optimum value, the receiver sensitivity increases as device bandwidth decreases, causing ISI to dominate avalanche noise and tunneling current shot noise

Fast response time fiber optical pH and oxygen sensors

While fluorescence-based fiber optic sensors for measuring both pH and oxygen concentration (O2) are well known, current sensors are often limited by their response time and drift, which limits the use of existing fiber optic sensors of this type in wider applications, for example in physiology and other fields. Several new fiber optical sensors have been developed and optimized, with respect to key features such as tip shape and coating layer thickness. In this work, preliminary results on the performance of a suite of pH sensors with fast response times, < 3 second and oxygen sensors (O2) with response times < 0.2 second. The sensors have been calibrated and their performance analyzed using the Henderson–Hasselbalch equation (pH) and classic Lehrer-model (O2)

An quantum approach of measurement based on the Zurek's triple model

In a close form without referring the time-dependent Hamiltonian to the total system, a consistent approach for quantum measurement is proposed based on Zurek's triple model of quantum decoherence [W.Zurek, Phys. Rev. D 24, 1516 (1981)]. An exactly-solvable model based on the intracavity system is dealt with in details to demonstrate the central idea in our approach: by peeling off one collective variable of the measuring apparatus from its many degrees of freedom, as the pointer of the apparatus, the collective variable de-couples with the internal environment formed by the effective internal variables, but still interacts with the measured system to form a triple entanglement among the measured system, the pointer and the internal environment. As another mechanism to cause decoherence, the uncertainty of relative phase and its many-particle amplification can be summed up to an ideal entanglement or an Shmidt decomposition with respect to the preferred basis.Comment: 22pages,3figure

Improvement of Switching Speed of a 600-V Nonpunch-through Insulated Gate Bipolar Transistor Using Fast Neutron Irradiation

AbstractFast neutron irradiation was used to improve the switching speed of a 600-V nonpunch-through insulated gate bipolar transistor. Fast neutron irradiation was carried out at 30-MeV energy in doses of 1 × 108 n/cm2, 1 × 109 n/cm2, 1 × 1010 n/cm2, and 1 × 1011 n/cm2. Electrical characteristics such as current–voltage, forward on-state voltage drop, and switching speed of the device were analyzed and compared with those prior to irradiation. The on-state voltage drop of the initial devices prior to irradiation was 2.08 V, which increased to 2.10 V, 2.20 V, 2.3 V, and 2.4 V, respectively, depending on the irradiation dose. This effect arises because of the lattice defects generated by the fast neutrons. In particular, the turnoff delay time was reduced to 92 nanoseconds, 45% of that prior to irradiation, which means there is a substantial improvement in the switching speed of the device

Adaptive online deployment for resource constrained mobile smart clients

Nowadays mobile devices are more and more used as a platform for applications. Contrary to prior generation handheld devices configured with a predefined set of applications, today leading edge devices provide a platform for flexible and customized application deployment. However, these applications have to deal with the limitations (e.g. CPU speed, memory) of these mobile devices and thus cannot handle complex tasks. In order to cope with the handheld limitations and the ever changing device context (e.g. network connections, remaining battery time, etc.) we present a middleware solution that dynamically offloads parts of the software to the most appropriate server. Without a priori knowledge of the application, the optimal deployment is calculated, that lowers the cpu usage at the mobile client, whilst keeping the used bandwidth minimal. The information needed to calculate this optimum is gathered on the fly from runtime information. Experimental results show that the proposed solution enables effective execution of complex applications in a constrained environment. Moreover, we demonstrate that the overhead from the middleware components is below 2%

Nonmonotonic inelastic tunneling spectra due to surface spin excitations in ferromagnetic junctions

The paper addresses inelastic spin-flip tunneling accompanied by surface spin excitations (magnons) in ferromagnetic junctions. The inelastic tunneling current is proportional to the magnon density of states which is energy-independent for the surface waves and, for this reason, cannot account for the bias-voltage dependence of the observed inelastic tunneling spectra. This paper shows that the bias-voltage dependence of the tunneling spectra can arise from the tunneling matrix elements of the electron-magnon interaction. These matrix elements are derived from the Coulomb exchange interaction using the itinerant-electron model of magnon-assisted tunneling. The results for the inelastic tunneling spectra, based on the nonequilibrium Green's function calculations, are presented for both parallel and antiparallel magnetizations in the ferromagnetic leads.Comment: 9 pages, 4 figures, version as publishe

Comparative Study on Magnetic Properties and Microstructure of As-prepared and Alternating Current Joule Annealed Wires

AbstractX-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), magnetic measurement including impedance measurement were used for investigating the microstructure and magnetic properties of as-prepared and alternating current Joule annealed (ACJA) Co-rich amorphous microwires for potential sensor applications. Experimental results indicated that as-cast and ACJA wires both were amorphous characteristic, while ACJA wire has an enhanced local ordering degree of atom arrangement. There was a transform of magnetic properties after ACJA treatment, namely increasing coercivity, maximum magnetic permeability and saturation magnetization, resulting from the coactions of magnetic anisotropy and magnetic moment exchange coupling. Moreover, ACJA treatment can drastically improve the GMI property of melt-extracted wires. At 5MHz, the maximum GMI ratio [ΔZ/Z0]max of ACJA wire increases to 205.93%, which is nearly 4.1 times of 50.62% for as-cast wire, and the field response sensitivity ξmax of ACJA wire increases to 463.70%/Oe by more than 2 times of 212.15%/Oe for as-cast wire. From sensor application perspective, the sensor applied frequency range (SAFR) of ACJA wire is 3MHz-7MHz (the better working frequency is at 5MHz). It can therefore be concluded that the ACJA wire (60mA, 480s, 50Hz) has better GMI and magnetic properties, is more suitable for potential magnetic sensor applications working at low-frequency and relatively high-working-magnetic field

Exceptionally Slow Rise in Differential Reflectivity Spectra of Excitons in GaN: Effect of Excitation-induced Dephasing

Femtosecond pump-probe (PP) differential reflectivity spectroscopy (DRS) and four-wave mixing (FWM) experiments were performed simultaneously to study the initial temporal dynamics of the exciton line-shapes in GaN epilayers. Beats between the A-B excitons were found \textit{only for positive time delay} in both PP and FWM experiments. The rise time at negative time delay for the differential reflection spectra was much slower than the FWM signal or PP differential transmission spectroscopy (DTS) at the exciton resonance. A numerical solution of a six band semiconductor Bloch equation model including nonlinearities at the Hartree-Fock level shows that this slow rise in the DRS results from excitation induced dephasing (EID), that is, the strong density dependence of the dephasing time which changes with the laser excitation energy.Comment: 8 figure

Time-Dependent Spintronic Transport and Current-Induced Spin Transfer Torque in Magnetic Tunnel Junctions

The responses of the electrical current and the current-induced spin transfer torque (CISTT) to an ac bias in addition to a dc bias in a magnetic tunnel junction are investigated by means of the time-dependent nonquilibrium Green function technique. The time-averaged current (time-averaged CISTT) is formulated in the form of a summation of dc current (dc CISTT) multiplied by products of Bessel functions with the energy levels shifted by $m\hbar \omega _{0}$. The tunneling current can be viewed as to happen between the photonic sidebands of the two ferromagnets. The electrons can pass through the barrier easily under high frequencies but difficultly under low frequencies. The tunnel magnetoresistance almost does not vary with an ac field. It is found that the spin transfer torque, still being proportional to the electrical current under an ac bias, can be changed by varying frequency. Low frequencies could yield a rapid decrease of the spin transfer torque, while a large ac signal leads to both decrease of the electrical current and the spin torque. If only an ac bias is present, the spin transfer torque is sharply enhanced at the particular amplitude and frequency of the ac bias. A nearly linear relation between such an amplitude and frequency is observed.Comment: 13 pages,8 figure