Local Hall effect in hybrid ferromagnetic/semiconductor devices

We have investigated the magnetoresistance of ferromagnet-semiconductor devices in an InAs two-dimensional electron gas system in which the magnetic field has a sinusoidal profile. The magnetoresistance of our device is large. The longitudinal resistance has an additional contribution which is odd in applied magnetic field. It becomes even negative at low temperature where the transport is ballistic. Based on the numerical analysis, we confirmed that our data can be explained in terms of the local Hall effect due to the profile of negative and positive field regions. This device may be useful for future spintronic applications.Comment: 4 pages with 4 fugures. Accepted for publication in Applied Physics Letter

Energy exchange during stimulated Raman scattering of a relativistic laser in a plasma

Energy exchange between pump and daughter waves during the stimulated Raman scattering process in a plasma is investigated, including the effect of a damping coefficient of electron-ion collision at different initial three-wave phases. To obey the energy and momentum conservations, the resonance conditions are satisfied at an optimal initial phase difference between the interacting waves. The amplitudes of the interacting waves exhibit behaviors such as a parametric oscillator. The variations in initial three-wave phase difference generate a phase mismatch, which enhances the rate of the amplitude variations of the interacting waves. The relativistic mass effect modifies the dispersion relations of the interacting waves, and consequently the energy exchange during the stimulated Raman scattering is affected. The collisional damping in the plasma is shown to have an important effect on the evolution of the interacting waves.open91

Onset of stimulated Raman scattering of a laser in a plasma in the presence of hot drifting electrons

Stimulated Raman scattering of a laser in plasmas with energetic drifting electrons was investigated by analyzing the growth of interacting waves during the Raman scattering process. The Langmuir wave and scattered electromagnetic sideband wave grow initially and are dampened after attaining a maximum level that indicates a periodic exchange of energy between the pump wave and the daughter waves. The presence of energetic drifting electrons in the laser-produced plasma influences the stimulated Raman scattering process. The plasma wave generated by Raman scattering may be influenced by the energetic electrons, which enhance the growth rate of the instability. Our results show that the presence of energetic (hot) drifting electrons in a plasma has an important effect on the evolution of the interacting waves. This phenomenon is modeled via two-dimensional particle-in-cell simulations of the propagation and interaction of the laser under Raman instability. (C) 2015 AIP Publishing LLCopen

Large capacitance-voltage hysteresis loops in SiO[sub 2] films containing Ge nanocrystals produced by ion implantation and annealing

Metal-oxide-semiconductorstructures containing Genanocrystals (NCs) of 3–4nm diameter and 2×10¹²cm⁻² density are shown to exhibit capacitance-voltage hysteresis of 20.9V, one of the largest observed in Ge-NC based nonvolatile memories. The Ge NCs were fabricated in an oxide of 30nm thickness by ion implantation with 30keV Ge₂⁻ ions to an equivalent fluence of 1×10¹⁶Gecm⁻² followed by annealing at 950 °C for 10min. Secondary ion mass spectroscopy and transmission electron microscopy demonstrate the existence of Ge NCs whose average distance from the SiO₂∕Siinterface is about 6.7nm. It is shown that the memory effect is a likely consequence of charge trapping at Ge NCs and that it is enhanced by accurately controlling the distribution of Ge NCs with respect to the Si∕SiO₂interface.This work was partially supported by the QuantumFunctional Semiconductor Research Center in Dongguk University and by the National Program for Tera Level Nano Devices through MOST. S.-H.C. acknowledges partial support from the National Research Program for the 0.1 Terabit Non-Volatile Memory Development sponsored by Korea Ministry of Science & Technology. R.G.E. additionally acknowledges the Australian Research Council for their partial financial support of this work

Strong terahertz emission from electromagnetic diffusion near cutoff in plasma

Anew mechanism for electromagnetic emission in the terahertz (THz) frequency regime from laser-plasma interactions is described. A localized and long-lasting transverse current is produced by two counter-propagating short laser pulses in weakly magnetized plasma. We show that the electromagnetic wave radiating from this current source, even though its frequency is close to cut-off of the ambient plasma, grows and diffuses towards the plasma-vacuum boundary, emitting a strong monochromatic THz wave. With driving laser pulses of moderate power, the THz wave has a field strength of tens of MV m(-1), a frequency of a few THz and a quasi-continuous power that exceeds all previous monochromatic THz sources. The novelty of the mechanism lies in a diffusing electromagnetic wave close to cut-off, which is modelled by a continuously driven complex diffusion equationopen

Multiple haplotype-resolved genomes reveal population patterns of gene and protein diplotypes

To fully understand human biology and link genotype to phenotype, the phase of DNA variants must be known. Here we present a comprehensive analysis of haplotype-resolved genomes to assess the nature and variation of haplotypes and their pairs, diplotypes, in European population samples. We use a set of 14 haplotype-resolved genomes generated by fosmid clone-based sequencing, complemented and expanded by up to 372 statistically resolved genomes from the 1000 Genomes Project. We find immense diversity of both haploid and diploid gene forms, up to 4.1 and 3.9 million corresponding to 249 and 235 per gene on average. Less than 15% of autosomal genes have a predominant form. We describe a ‘common diplotypic proteome’, a set of 4,269 genes encoding two different proteins in over 30% of genomes. We show moreover an abundance of cis configurations of mutations in the 386 genomes with an average cis/trans ratio of 60:40, and distinguishable classes of cis- versus trans-abundant genes. This work identifies key features characterizing the diplotypic nature of human genomes and provides a conceptual and analytical framework, rich resources and novel hypotheses on the functional importance of diploidy

Tin doped indium oxide core-TiO <inf>2</inf> shell nanowires on stainless steel mesh for flexible photoelectrochemical cells

Photoanode architecture is built on highly conductive tin doped indium oxide (ITO) nanowires (NWs) on a flexible stainless steel mesh (SSM). ITO nanowires were coated with the atomic layer deposition grown TiO 2 layer and the photoelectrochemical performance of the stainless steel mesh based photoanode were examined as a function of wire-length and shell-thickness. The photoanode consisting of 20 m-long nanowire core and 36 nm thick shell increased the photocurrent of the testing cell by 4 times, compared to a reference cell. This enhanced photochemical activity is attributed to higher light harvesting efficiency of nanowire arrays and suppressed charge recombination of core-shell structure. © 2012 American Institute of Physics

GALEX Ultraviolet Photometry of Globular Clusters in M31

We present ultraviolet photometry for globular clusters (GCs) in M31 from 15 square deg of imaging using the Galaxy Evolution Explorer (GALEX). We detect 200 and 94 GCs with certainty in the near-ultraviolet (NUV; 1750 - 2750 Angstroms) and far-ultraviolet (FUV; 1350 - 1750 Angstroms) bandpasses, respectively. Our rate of detection is about 50% in the NUV and 23% in the FUV, to an approximate limiting V magnitude of 19. Out of six clusters with [Fe/H]>-1 seen in the NUV, none is detected in the FUV bandpass. Furthermore, we find no candidate metal-rich clusters with significant FUV flux, because of the contribution of blue horizontal-branch (HB) stars, such as NGC 6388 and NGC 6441, which are metal-rich Galactic GCs with hot HB stars. We show that our GALEX photometry follows the general color trends established in previous UV studies of GCs in M31 and the Galaxy. Comparing our data with Galactic GCs in the UV and with population synthesis models, we suggest that the age range of M31 and Galactic halo GCs are similar.Comment: This paper will be published as part of the Galaxy Evolution Explorer (GALEX) Astrophysical Journal Letters Special Issue. Links to the full set of papers will be available at http://www.galex.caltech.edu/PUBLICATIONS/ after November 22, 200

Metal-slotted polymer optical waveguide device

Metal-slotted optical waveguides (MSOWs) using an electro-optic polymer material have been experimentally demonstrated. The device consists of a three-layered slab waveguide in that the thin metal (gold) film strips are embedded on top of the lower cladding. The optical mode shapes and effective index of the propagation modes of the proposed waveguide structure were calculated using a simplified effective index method and a simulation tool. The fabrication and the device characteristics of a variable optical attenuator and an optical phase modulator based on MSOWs are discussed.open5