An Approach for Measuring the Dielectric Strength of OLED Materials

Surface roughness of electrodes plays a key role in the dielectric breakdown of thin-film organic devices. The rate of breakdown will increase when there are stochastic sharp spikes on the surface of electrodes. Additionally, surface having spiking morphology makes the determination of dielectric strength very challenging, specifically when the layer is relatively thin. We demonstrate here a new approach to investigate the dielectric strength of organic thin films for organic light-emitting diodes (OLEDs). The thin films were deposited on a substrate using physical vapor deposition (PVD) under high vacuum. The device architectures used were glass substrate/indium tin oxide (ITO)/organic material/aluminum (Al) and glass substrate/Al/organic material/Al. The dielectric strength of the OLED materials was evaluated from the measured breakdown voltage and layer thickness

3-(N,N-Diphenylamino)carbazole Donor Containing Bipolar Derivatives with Very High Glass Transition Temperatures as Potential TADF Emitters for OLEDs

Well-defined electroactive bipolar derivatives of new structure have been synthesized from 3-(N,N-diphenylamino)-9H-carbazole and bis(4-fluorophenyl)sulfone, 4-fluorophenylsulfone or 4,4′-difluorobenzophenone, respectively. The full characterization of their structure is described. The amorphous materials with very high glass transition temperatures of 111–173 °C also possess high thermal stability, with onset decomposition temperatures of 351–398 °C. Some of the compounds having the best solubility were tested as the emitters dispersed in 4,4′-bis(N-carbazolyl)-1,1′-biphenyl (CBP) host for preparation of organic light emitting diodes (OLEDs). A device containing 15 wt% of the guest bis[4-{3-(N,N-diphenylamino)carbazol-9-yl}phenyl] sulfone demonstrated the best overall characteristics with maximum brightness exceeding 2630 cd/m2, current efficiency of 3.2 cd/A, power efficiency of 2.2 lm/W, and external quantum efficiency exceeding 1.7% at 100 cd/m2

An Approach for Measuring the Dielectric Strength of OLED Materials

Surface roughness of electrodes plays a key role in the dielectric breakdown of thin-film organic devices. The rate of breakdown will increase when there are stochastic sharp spikes on the surface of electrodes. Additionally, surface having spiking morphology makes the determination of dielectric strength very challenging, specifically when the layer is relatively thin. We demonstrate here a new approach to investigate the dielectric strength of organic thin films for organic light-emitting diodes (OLEDs). The thin films were deposited on a substrate using physical vapor deposition (PVD) under high vacuum. The device architectures used were glass substrate/indium tin oxide (ITO)/organic material/aluminum (Al) and glass substrate/Al/organic material/Al. The dielectric strength of the OLED materials was evaluated from the measured breakdown voltage and layer thickness

Pyridinyl-Carbazole Fragments Containing Host Materials for Efficient Green and Blue Phosphorescent OLEDs

Pyridinyl-carbazole fragments containing low molar mass compounds as host derivatives H1 and H2 were synthesized, investigated, and used for the preparation of electro-phosphorescent organic light-emitting devices (PhOLEDs). The materials demonstrated high stability against thermal decomposition with the decomposition temperatures of 361–386 °C and were suitable for the preparation of thin amorphous and homogeneous layers with very high values of glass transition temperatures of 127–139 °C. It was determined that triplet energy values of the derivatives are, correspondingly, 2.82 eV for the derivative H1 and 2.81 eV for the host H2. The new derivatives were tested as hosts of emitting layers in blue, as well as in green phosphorescent OLEDs. The blue device with 15 wt.% of the iridium(III)[bis(4,6-difluorophenyl)-pyridinato-N,C2′]picolinate (FIrpic) emitter doping ratio in host material H2 exhibited the best overall characteristics with a power efficiency of 24.9 lm/W, a current efficiency of 23.9 cd/A, and high value of 10.3% of external quantum efficiency at 100 cd/m2. The most efficient green PhOLED with 10 wt% of Ir(ppy)3 {tris(2-phenylpyridine)iridium(III)} in the H2 host showed a power efficiency of 34.1 lm/W, current efficiency of 33.9 cd/A, and a high value of 9.4% for external quantum efficiency at a high brightness of 1000 cd/m2, which is required for lighting applications. These characteristics were obtained in non-optimized PhOLEDs under an ordinary laboratory atmosphere and could be improved in the optimization process. The results demonstrate that some of the new host materials are very promising components for the development of efficient phosphorescent devices