Analytical Modeling of Channel Noise for Gate Material Engineered Surrounded/Cylindrical Gate (SGT/CGT) MOSFET

In this paper, an analytical modeling is presentated to describe the channel noise in GME SGT/CGT MOSFET, based on explicit functions of MOSFETs geometry and biasing conditions for all channel length down to deep submicron and is verified with the experimental data. Results shows the impact of various parameters such as gate bias, drain bias, channel length ,device diameter and gate material work function difference on drain current noise spectral density of the device reflecting its applicability for circuit design applications

Impact of gate material engineering(GME) on analog/RF performance of nanowire Schottky-barrier gate all around (GAA) MOSFET for low power wireless applications: 3D T-CAD simulation

In this paper Gate Material Engineered (GME) Gate-Stack (GS) silicon nanowire Schottky-Barrier (SB) Gate All Around (GAA) MOSFET and Single Material Gate Stack Schottky-Barrier Source/Drain Gate All Around (SM-GS-SB-S/D GAA) structures are proposed for low- power wireless applications. The Analog/RF performance for wireless applications of these devices are demonstrated. The effect of Schottky-Barrier (Metal) S/D is studied for Single Metal (SM)–SB-GAA, (Dual Metal) DM-SB-GAA, SM-GS-SB-GAA and GME-GS-SB-GAA MOSFETs, and it is found that GME-GS-SB-GAA MOSFET with metal drain source shows much improved performance in terms of transconductance (gm), output conductance (gd), Early Voltage (VEA), Maximum Transducer Power Gain, cut-off frequency (fT), and Ion/Ioff ratio. Further, harmonic distortion for wireless applications is also studied using ATLAS-3D device simulator. Due to low parasitic S/D resistance the metal Source/Drain DM-GS-SB-S/D-GAA MOSFET demonstrates remarkable Ion of~31.8μA/μm and saturation transconductance gm of~68.2μS with improved third order derivative of transconductance gm3. •High cut-off frequency of Dual Metal-Schottky Barrier-GAA MOSFET: 193GHz.•Highest Ion/Ioff ratio of DM-GS-SB-GAA MOSFET: 9.58×104.•High transconductance of DM-GS-SB-GAA MOSFET: 68.2μS.•Low power VDS=50mV, with suppressed gm3.•Lightly doped channel (NA=1×1016cm−3 ), amalgamation of Dual metal Gate

Characterization of small geometry LDD MOSFETs with non-pinned flat band voltage

552-557A semi-empirical model to analyze the <span style="font-size: 13.0pt;mso-bidi-font-size:12.0pt;font-family:" times="" new="" roman","serif";="" mso-fareast-font-family:hiddenhorzocr"="" lang="EN-IN">small geometry (short and narrow) effects in LDD MOSEFTs incorporating the dependence of flatband voltage on channel length and width is developed. The analysis includes the short channel, narrow width, LDD and DIBL effects. An expression for threshold voltage based on the effective charge contained in the channel is obtained and the results so obtained are in good agreement with the experimental data. If noise is also evaluated incorporating the voltage drop in n ¯ region and charge induced due to flatband voltage, which matches well with experimental data. </span

DMG insulated shallow extension cylindrical GAA Schottky Barrier MOSFET for removal of ambipolarity: A novel approach

This paper proposes a novel Dual Metal Gate (DMG) Insulated Shallow Extension (ISE) Cylindrical Gate All Around (CGAA) Schottky Barrier (SB) MOSFET to eliminate the ambipolar behaviour of SB-CGAA MOSFET by blocking the metal induced gap states as well as unwanted charge sharing between source/channel and drain/channel regions. The I on /I off ratio of DMG-ISE-CGAA-SB MOSFET increases by 362 times offering steeper subthreshold slope (67.59 mV/decade) and improved cut-off frequency makes it attractive candidate for CMOS digital circuit design

Analytical model for high temperature performance of non-self aligned SiC MESFET

697-704An analytical model to evaluate the performance of a non-self-aligned SiC MESFET at elevated temperatures is developed. The formulation, devoid of complex mathematics takes into account all the major effects such as effective mobility, gate-bias dependent parasitic resistances and self-back gating effect. The model evaluates Ids~Vds characteristics, transconductance, channel conductance, intrinsic device capacitances and their dependence on temperature has also been discussed

Investigation of Analog/RF performance of High-k spacer Junctionless Accumulation-Mode Cylindrical Gate All Around (JLAM-CGAA) MOSFET

This paper investigates the high-k spacer Junctionless Accumulation Mode (JLAM) Cylindrical Gate All Around (CGAA) MOSFET for improved electrical behavior and Analog/(RF) performance at 20 nm gate length. In the proposed device, the drive current (I ON ) enhances due to Source/Channel barrier reduction and leakage current (I OFF ) is reduced because of an effective increase in the physical channel length, due to fringing field effect caused by spacers. The impact of spacers on Analog/RF matrices such as I ON /I OFF ratio, transconductance (g m ), Tansconductance Generation Factor (g m /I DS ) TGF, intrinsic gain (g m /g d ) and Subthreshold Slope (SS) is investigated in detail. The improvement in I ON /I OFF and reduced SS make it relevant for low power digital application