Analytical model for high temperature performance of non-self aligned SiC MESFET

Abstract

697-704An analytical model to evaluate the performance of a non-self-aligned SiC MESFET at elevated temperatures is developed. The formulation, devoid of complex mathematics takes into account all the major effects such as effective mobility, gate-bias dependent parasitic resistances and self-back gating effect. The model evaluates Ids~Vds characteristics, transconductance, channel conductance, intrinsic device capacitances and their dependence on temperature has also been discussed