552-557A
semi-empirical model to analyze the <span style="font-size:
13.0pt;mso-bidi-font-size:12.0pt;font-family:" times="" new="" roman","serif";="" mso-fareast-font-family:hiddenhorzocr"="" lang="EN-IN">small geometry
(short and narrow) effects in LDD MOSEFTs incorporating the dependence of flatband
voltage on channel length and width is developed. The analysis includes the
short channel, narrow width, LDD and DIBL effects. An expression for threshold voltage
based on the effective charge contained in the channel is obtained and the results
so obtained are in good agreement with the experimental data. If noise is also
evaluated incorporating the voltage drop in n ¯
region and charge induced due to flatband voltage, which matches well with experimental
data.
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