Legal Impediments to Service: Women in the Military and the Rule of Law

Some of those who served did so by disguising themselves as men.6 A number of women had served as spies, as was the case of Rose O\u27Neal Greenhow, who was arrested and imprisoned for supplying the Confederate Army with information, and Pauline Cushman, who was sentenced to be executed as a Union spy during the War Between the States.7 The first woman to receive the Congressional Medal of Honor, Dr. Mary Walker, provided her services as a doctor free of charge to Union forces in Virginia and Tennessee.8 She had asked the Union Army to hire her as a doctor, but it refused.9 Despite its refusal to hire her, Dr. Walker continued to provide medical services to Union soldiers.10 Eventually, she was captured by Confederate soldiers.11 After her release from Confederate prison as part of a prisoner exchange, she was given an official position of Acting Assistant Surgeon, the first woman to be given such a title.12 Dr. Walker received the Congressional Medal of Honor after the war.13 In 1917, however, the U.S. Congress attempted to remove the honor from her, stating that only those who fought in combat were entitled to the award.14 When the Congress decided that the Medal had been awarded in error, Walker refused to return the medal.15 Even after her death, Dr Walker\u27s family continued to battle to resolve her status as a Medal of Honor recipient. [...] women were not afforded the right to vote in any state in any election before achieving the right to vote in school board elections in Kentucky in 1838.18 Passage of the Nineteenth Amendment in 1920 gave women the right to vote in national elections across the country.19 Similarly, women were not entitled to administer estates, own property, or enter into contract in their personal capacity.\n Perhaps it is unsurprising that, more than forty years after the Civil Rights Act of 1964, members of the legislative branch, as well as those in positions to engender policy for and within the U.S. military, continue to limit opportunities for women in fields in which they have a proven competence

The origin, government and doctriens of the leading protestant churches in England and the United States

Citation: Strite, Mary Catherine. The origin, government and doctriens of the leading protestant churches in England and the United States. Senior thesis, Kansas State Agricultural College, 1905.Morse Department of Special CollectionsIntroduction; Protestants is a term applied to the adherents of Luther, from their protesting against the decree passed by the Catholic States at the second Diet of Spices in 1529. Martin Luther was an Augustinian monk and a professor in the University of Wittenberg. In 1517 he attacked the sale of indulgences and wrote out series of ninety-five statements in regard to them. These, he posted on the Church door, and invited anyone interested in the matter to enter into a discussion with him on the subject. This, he believed, was very illy understood. In posting these theses, as they were called, Luther didn't intend to attack the Church, and had no expectation of creating a. sensation. The theses were in Latin and addressed only to scholars. It turned out, however, that every one, high and low, learned and unlearned, was ready to discuss the perplexing theme of the nature of indulgences. These theses were promptly translated into German, printed, and scattered throughout the land. The Protestants opposed the Roman Church chiefly because it first, raises tradition to the level of the Scriptures as a source of doctrine, second, it denies justification by faith alone, and third, it makes the Pope the spiritual ruler of the entire Christian Church. The leader of the Protestant movement in Switzerland was Ulrich Zwingli. The Zwinglians differed from the Lutherans on the doctrine of the Lord's Supper. The former considered it a memorial feast intended to cell vividly to mind the Saviour's death. The latter held that while transubstantiation is to be denied, Christ is actually received in the sacrament. This division of opinion weakened by Protestant power

Properties of InGaN deposited on Glass at Low Temperature

We have investigated the properties of InGaN grown at low temperature on glass substrates by a plasma enhanced MBE process. The goal of this study was to evaluate the potential of InGaN as an oxide-free, transparent conductor material which could be deposited at or slightly above room temperature with minimal interaction or damage to the underlying material. InxGa1−xN films deposited on glass, even without substrate heating, are highly crystalline, but the crystallinity as measured by x-ray degrades at x 0.5) is conductive due to its high electron concentration. InN electron Hall mobilities > 20 cm2/Vs when grown at 400°C, and ~ 7 cm2/Vs on unheated substrates were obtained. The addition of GaN degraded the electrical properties of the films to a greater extent than it improved the transparency. As a result, the best transparent conductor films were pure InN which, when deposited at 400°C, were half as transparent in the green as an indium tin oxide film having the same sheet resistanc

Kinetic modeling of microscopic processes during electron cyclotron resonance microwave plasma-assisted molecular beam epitaxial growth of GaN/GaAs-based heterostructures

Microscopic growth processes associated with GaN/GaAs molecular beam epitaxy (MBE) are examined through the introduction of a first-order kinetic model. The model is applied to the electron cyclotron resonance microwave plasma-assisted MBE (ECR-MBE) growth of a set of delta-GaNyAs1–y/GaAs strained-layer superlattices that consist of nitrided GaAs monolayers separated by GaAs spacers, and that exhibit a strong decrease of y with increasing T over the range 540–580 °C. This y(T) dependence is quantitatively explained in terms of microscopic anion exchange, and thermally activated N surface-desorption and surface-segregation processes. N surface segregation is found to be significant during GaAs overgrowth of GaNyAs1–y layers at typical GaN ECR-MBE growth temperatures, with an estimated activation energy Es ~ 0.9 eV. The observed y(T) dependence is shown to result from a combination of N surface segregation/desorption processes

Raman spectroscopy of InN films grown on Si

We have used Raman spectroscopy to study indium nitride thin films grown by molecular beam epitaxy on (111) silicon substrates at temperatures between 450 and 550 C. The Raman spectra show well defined peaks at 443, 475, 491, and 591 cm{-1}, which correspond to the A_1(TO), E_1(TO), E_2^{high}, and A_1(LO) phonons of the wurtzite structure, respectively. In backscattering normal to the surface the A_1(TO) and E_1(TO) peaks are very weak, indicating that the films grow along the hexagonal c axis. The dependence of the peak width on growth temperature reveals that the optimum temperature is 500 C, for which the fullwidth of the E_2^{high} peak has the minimum value of 7 cm{-1}. This small value, comparable to previous results for InN films grown on sapphire, is evidence of the good crystallinity of the films.Comment: 3 pages, 1 eps figure, RevTe

Improved optical activation of ion-implanted Zn acceptors in GaN by annealing under N2 overpressure

We investigated the properties of ion-implanted GaN:Zn annealed under various conditions using photoluminescence (PL) and high resolution x-ray diffraction (HRXRD). Epitaxial GaN/sapphire of high optical quality was ion-implanted with a 1013 cm−2 dose of Zn+ ions at 200 keV. The sample was capped with 200 Å of SiNx and then diced into numerous pieces which were annealed under varied conditions in an attempt to optically activate the Zn. Annealing was performed in a tube furnace under flowing N2, an atmospheric pressure MOCVD reactor under flowing NH3 or N2, and under an N2 overpressure of 190 atm. The observed improvement in the optical quality of GaN:Zn annealed under N2 overpressure yields further insights into the trade-off between defect annealing and N loss from the GaN crysta