Realizing lateral wrap-gated nanowire FETs: Controlling gate length with chemistry rather than lithography

An important consideration in miniaturizing transistors is maximizing the coupling between the gate and the semiconductor channel. A nanowire with a coaxial metal gate provides optimal gate-channel coupling, but has only been realized for vertically oriented nanowire transistors. We report a method for producing laterally oriented wrap-gated nanowire field-effect transistors that provides exquisite control over the gate length via a single wet etch step, eliminating the need for additional lithography beyond that required to define the source/drain contacts and gate lead. It allows the contacts and nanowire segments extending beyond the wrap-gate to be controlled independently by biasing the doped substrate, significantly improving the sub-threshold electrical characteristics. Our devices provide stronger, more symmetric gating of the nanowire, operate at temperatures between 300 to 4 Kelvin, and offer new opportunities in applications ranging from studies of one-dimensional quantum transport through to chemical and biological sensing.Comment: 16 pages, 5 figures. Submitted version, published version available at http://http://pubs.acs.org/journal/nalef

Simplifying Nanowire Hall Effect Characterization by Using a Three-Probe Device Design

Electrical characterization of nanowires is a time-consuming and challenging task due to the complexity of single nanowire device fabrication and the difficulty in interpreting the measurements. We present a method to measure Hall effect in nanowires using a three-probe device that is simpler to fabricate than previous four-probe nanowire Hall devices and allows characterization of nanowires with smaller diameter. Extraction of charge carrier concentration from the three-probe measurements using an analytical model is discussed and compared to simulations. The validity of the method is experimentally verified by a comparison between results obtained with the three-probe method and results obtained using four-probe nanowire Hall measurements. In addition, a nanowire with a diameter of only 65 nm is characterized to demonstrate the capabilities of the method. The three-probe Hall effect method offers a relatively fast and simple, yet accurate way to quantify the charge carrier concentration in nanowires and has the potential to become a standard characterization technique for nanowires

Successful talent development environments in female Scandinavian Handball: Constellations of communities of practice and its implications for role modeling and interactions between talents, senior players and coaches

Talent development is a sociocultural affair. The social learning perspective is rarely used for the study of talent development in sport, although it is broadly known in the domain of education. This article examines the way in which communities of practice are connected within two exceptional successful talent development environments, what characterises talents’ movements across communities of practice within the club, and what characterises the interactions between talents, senior players and coaches. Drawing on Wenger’s notion of communities of practice, constellations of interconnected practices and boundary encounters, it identifies how the two environments were characterised by (1) a well-functioning constellation of several CoPs, (2) opportunities for talents to participate and engage in various CoPs (3), individually adjusted feedback from coach to player combined with communication between the players with different positions in the CoPs and not only coach instructions, and (4) senior elite players’ engaging behaviours in regard to newcomers in the boundary encounters and thereby legitimate peripheral participation opportunities for talented players. (5) The coaches were the key to coordinate the interconnected practices and social interactions between the ‘youth CoP’ and ‘senior elite CoP’.Talent development is a sociocultural affair. The social learning perspective is rarely used for the study of talent development in sport, although it is broadly known in the domain of education. This article examines the way in which communities of practice are connected within two exceptional successful talent development environments, what characterises talents’ movements across communities of practice within the club, and what characterises the interactions between talents, senior players and coaches. Drawing on Wenger’s notion of communities of practice, constellations of interconnected practices and boundary encounters, it identifies how the two environments were characterised by (1) a well-functioning constellation of several CoPs, (2) opportunities for talents to participate and engage in various CoPs (3), individually adjusted feedback from coach to player combined with communication between the players with different positions in the CoPs and not only coach instructions, and (4) senior elite players’ engaging behaviours in regard to newcomers in the boundary encounters and thereby legitimate peripheral participation opportunities for talented players. (5) The coaches were the key to coordinate the interconnected practices and social interactions between the ‘youth CoP’ and ‘senior elite CoP’

Examen philosophicum – between the idea of universitas and the schoolification of the university

Examen philosophicum hviler på en idé om at alle som forsker, underviser eller studerer ved universitetet inngår i et fellesskap. I artikkelen blir dette fellesskapet omtalt som ideen om universitas og består av to elementer: Det ene er en spesifikk kunnskapsform der man søker helhetlig kunnskap for sin egen del, mens det andre er en spesifikk symmetrisk og jevnbyrdig omgangsform som blir nødvendig nettopp for å søke denne kunnskapen. Denne ideen om universitas er imidlertid truet av vår tids massifisering, byråkratisering og instrumentalisme, med den konsekvens at universitetet minner mer og mer om skolen. Implementeringen av Kvalitetsreformen i 2003 kan sies å være et tydelig uttrykk for denne skolegjøringen. Ved Universitetet i Bergen var imidlertid undervisningen ved examen philosophicum preget av skolegjøring før Kvalitetsreformen ble innført. Ved å skissere opp et filosofisk og historisk bakteppe for ideen om universitas og å sette skolegjøringen av universitetet i et bredere perspektiv, ønsker artikkelen å sette fokus på en noe paradoksal rolle examen philosophicum har fått: Examen philosophicum er både en siste skanse for ideen om universitas og en pådriver for tendenser som vil underminere denne ideen på samme tid.publishedVersio

Du kan, du skal – skolevegring, digitalisering og selvets tretthet i den elevsentrerte skolen

publishedVersio

InAs nanowire metal-oxide-semiconductor capacitors

We present a capacitance-voltage study for arrays of vertical InAs nanowires. Metal-oxide-semiconductor (MOS) capacitors are obtained by insulating the nanowires with a conformal 10 nm HfO2 layer and using a top Cr/Au metallization as one of the capacitor's electrodes. The described fabrication and characterization technique enables a systematic investigation of the carrier density in the nanowires as well as of the quality of the MOS interface

Doping Incorporation in InAs nanowires characterized by capacitance measurements

Sn and Se dopedInAsnanowires are characterized using a capacitance-voltage technique where the threshold voltages of nanowirecapacitors with different diameter are determined and analyzed using an improved radial metal-insulator-semiconductor field-effect transistor model. This allows for a separation of doping in the core of the nanowire from the surface charge at the side facets of the nanowire. The data show that the doping level in the InAsnanowire can be controlled on the level between 2×10¹⁸ to 1×10¹⁹ cm¯³, while the surface charge density exceeds 5×10¹² cm¯² and is shown to increase with higher dopant precursor molar fraction.This work was supported by the Swedish Research Council, the Swedish Foundation for Strategic Research, VINNOVA, the EU-project NODE 015783 and the Knut and Alice Wallenberg Foundation

Doping Incorporation in InAs nanowires characterized by capacitance measurements

Sn and Se doped InAs nanowires are characterized using a capacitance-voltage technique where the threshold voltages of nanowire capacitors with different diameter are determined and analyzed using an improved radial metal-insulator-semiconductor field-effect transistor model. This allows for a separation of doping in the core of the nanowire from the surface charge at the side facets of the nanowire. The data show that the doping level in the InAs nanowire can be controlled on the level between 2×1018 to 1×1019 cm−3, while the surface charge density exceeds 5×1012 cm−2 and is shown to increase with higher dopant precursor molar fraction

Pembuatan Aplikasi Sistem Informasi Persebaran Toko Batik Di Kota Pekalongan Berbasis Android

Pekalongan is located in the lowlands along the north coast of Java Island, at a height of approximately one meter above sea level. The geographical position of Pekalongan is between 6° 50\u27 42" to 6° 55\u27 44\u27\u27 North Latitude and 109° 37\u27 55\u27\u27to 109° 42\u27 19\u27\u27 East Longitude.Pekalongan area of about 42.25 km2 or approximately 0.14% from the area of Central Java Province.Pekalongan is known by the nickname city of Batik, because batik Pekalongan has distinctive and varied livery. Therefore, Pekalongan is espected to provide a practical and informative information for tourists, so it can be an attraction and increase the number of tourists coming to Pekalongan. This research uses of spatial and non spasial data in the form of batik store name, the owner\u27s name, phone number, address, and products sold with using the popularity of android smartphone as a platform system information.This application was developed using an SDK Andoidframework, java and PHP programming languages, and MySQL as base data, and Google Maps. The final result of this research is the Android application of the distribution of batik store in Pekalongan is accompanied by information (as has been mentioned above) from each store for easier searching the location of the batik stores in Pekalonga

Scanning gate imaging of quantum dots in 1D ultra-thin InAs/InP nanowires

We use a scanning gate microscope (SGM) to characterize one-dimensional ultra-thin (diameter ≈ 30 nm) InAs/InP heterostructure nanowires containing a nominally 300 nm long InAs quantum dot defined by two InP tunnel barriers. Measurements of Coulomb blockade conductance versus backgate voltage with no tip present are difficult to decipher. Using the SGM tip as a charged movable gate, we are able to identify three quantum dots along the nanowire: the grown-in quantum dot and an additional quantum dot near each metal lead. The SGM conductance images are used to disentangle information about individual quantum dots and then to characterize each quantum dot using spatially resolved energy-level spectroscopy.Physic