Cooling of radiative quantum-dot excitons by terahertz radiation: A spin-resolved Monte Carlo carrier dynamics model

We have developed a theoretical model to analyze the anomalous cooling of radiative quantum dot (QD) excitons by THz radiation reported by Yusa et al [Proc. 24th ICPS, 1083 (1998)]. We have made three-dimensional (3D) modeling of the strain and the piezoelectric field and calculated the 3D density of states of strain induced quantum dots. On the basis of this analysis we have developed a spin dependent Monte Carlo model, which describes the carrier dynamics in QD's when the intraband relaxation is modulated by THz radiation. We show that THz radiation causes resonance transfer of holes from dark to radiative states in strain-induced QD's. The transition includes a spatial transfer of holes from the piezoelectric potential mimima to the deformation potential minimum. This phenomenon strongly enhances the QD ground state luminescence at the expense of the luminescence from higher states. Our model also reproduces the delayed flash of QD ground state luminescence, activated by THz radiation even $\sim1$ s after the carrier generation. Our simulations suggest a more general possibility to cool the radiative exciton subsystem in optoelectronic devices.Comment: 18 pages, 1 table, 8 figures, submitted to Physical Review B v2: major conceptual changes. The article was extended considerably to suit Physical Review B (instead of Physical Review Letters

Hole-LO phonon interaction in InAs/GaAs quantum dots

We investigate the valence intraband transitions in p-doped self-assembled InAs quantum dots using far-infrared magneto-optical technique with polarized radiation. We show that a purely electronic model is unable to account for the experimental data. We calculate the coupling between the mixed hole LO-phonon states using the Fr\"ohlich Hamiltonian, from which we determine the polaron states as well as the energies and oscillator strengths of the valence intraband transitions. The good agreement between the experiments and calculations provides strong evidence for the existence of hole-polarons and demonstrates that the intraband magneto-optical transitions occur between polaron states

The aerosol-climate model ECHAM5-HAM

The aerosol-climate modelling system ECHAM5-HAM is introduced. It is based on a flexible microphysical approach and, as the number of externally imposed parameters is minimised, allows the application in a wide range of climate regimes. ECHAM5-HAM predicts the evolution of an ensemble of microphysically interacting internally- and externally-mixed aerosol populations as well as their size-distribution and composition. The size-distribution is represented by a superposition of log-normal modes. In the current setup, the major global aerosol compounds sulfate (SU), black carbon (BC), particulate organic matter (POM), sea salt (SS), and mineral dust (DU) are included. The simulated global annual mean aerosol burdens (lifetimes) for the year 2000 are for SU: 0.80 Tg(S) (3.9 days), for BC: 0.11 Tg (5.4 days), for POM: 0.99 Tg (5.4 days), for SS: 10.5 Tg (0.8 days), and for DU: 8.28 Tg (4.6 days). An extensive evaluation with in-situ and remote sensing measurements underscores that the model results are generally in good agreement with observations of the global aerosol system. The simulated global annual mean aerosol optical depth (AOD) is with 0.14 in excellent agreement with an estimate derived from AERONET measurements (0.14) and a composite derived from MODIS-MISR satellite retrievals (0.16). Regionally, the deviations are not negligible. However, the main patterns of AOD attributable to anthropogenic activity are reproduced

Bound-to-bound and bound-to-continuum optical transitions in combined quantum dot - superlattice systems

By combining band gap engineering with the self-organized growth of quantum dots, we present a scheme of adjusting the mid-infrared absorption properties to desired energy transitions in quantum dot based photodetectors. Embedding the self organized InAs quantum dots into an AlAs/GaAs superlattice enables us to tune the optical transition energy by changing the superlattice period as well as by changing the growth conditions of the dots. Using a one band envelope function framework we are able, in a fully three dimensional calculation, to predict the photocurrent spectra of these devices as well as their polarization properties. The calculations further predict a strong impact of the dots on the superlattices minibands. The impact of vertical dot alignment or misalignment on the absorption properties of this dot/superlattice structure is investigated. The observed photocurrent spectra of vertically coupled quantum dot stacks show very good agreement with the calculations.In these experiments, vertically coupled quantum dot stacks show the best performance in the desired photodetector application.Comment: 8 pages, 10 figures, submitted to PR

Eight-band calculations of strained InAs/GaAs quantum dots compared with one, four, and six-band approximations

The electronic structure of pyramidal shaped InAs/GaAs quantum dots is calculated using an eight-band strain dependent $\bf k\cdot p$ Hamiltonian. The influence of strain on band energies and the conduction-band effective mass are examined. Single particle bound-state energies and exciton binding energies are computed as functions of island size. The eight-band results are compared with those for one, four and six bands, and with results from a one-band approximation in which m(r) is determined by the local value of the strain. The eight-band model predicts a lower ground state energy and a larger number of excited states than the other approximations.Comment: 8 pages, 7 figures, revtex, eps

Self-consistent Coulomb effects and charge distribution of quantum dot arrays

This paper considers the self-consistent Coulomb interaction within arrays of self-assembled InAs quantum dots (QDs) which are embedded in a pn structure. Strong emphasis is being put on the statistical occupation of the electronic QD states which has to be solved self-consistently with the actual three-dimensional potential distribution. A model which is based on a Green's function formalism including screening effects is used to calculate the interaction of QD carriers within an array of QDs, where screening due to the inhomogeneous bulk charge distribution is taken into acount. We apply our model to simulate capacitance-voltage (CV) characteristics of a pn structure with embedded QDs. Different size distributions of QDs and ensembles of spatially perodic and randomly distributed arrays of QDs are investigated.Comment: submitted to pr

Tight-Binding model for semiconductor nanostructures

An empirical $s_cp^3_a$ tight-binding (TB) model is applied to the investigation of electronic states in semiconductor quantum dots. A basis set of three $p$-orbitals at the anions and one $s$-orbital at the cations is chosen. Matrix elements up to the second nearest neighbors and the spin-orbit coupling are included in our TB-model. The parametrization is chosen so that the effective masses, the spin-orbit-splitting and the gap energy of the bulk CdSe and ZnSe are reproduced. Within this reduced $s_cp_a^3$ TB-basis the valence (p-) bands are excellently reproduced and the conduction (s-) band is well reproduced close to the $\Gamma$-point, i.e. near to the band gap. In terms of this model much larger systems can be described than within a (more realistic) $sp^3s^*$-basis. The quantum dot is modelled by using the (bulk) TB-parameters for the particular material at those sites occupied by atoms of this material. Within this TB-model we study pyramidal-shaped CdSe quantum dots embedded in a ZnSe matrix and free spherical CdSe quantum dots (nanocrystals). Strain-effects are included by using an appropriate model strain field. Within the TB-model, the strain-effects can be artifically switched off to investigate the infuence of strain on the bound electronic states and, in particular, their spatial orientation. The theoretical results for spherical nanocrystals are compared with data from tunneling spectroscopy and optical experiments. Furthermore the influence of the spin-orbit coupling is investigated

Anomalous quantum confined Stark effects in stacked InAs/GaAs self-assembled quantum dots

Vertically stacked and coupled InAs/GaAs self-assembled quantum dots (SADs) are predicted to exhibit a strong non-parabolic dependence of the interband transition energy on the electric field, which is not encountered in single SAD structures nor in other types of quantum structures. Our study based on an eight-band strain-dependent ${\bf k}\cdot{\bf p}$ Hamiltonian indicates that this anomalous quantum confined Stark effect is caused by the three-dimensional strain field distribution which influences drastically the hole states in the stacked SAD structures.Comment: 4 pages, 4 figure

Optical excitations of a self assembled artificial ion

By use of magneto-photoluminescence spectroscopy we demonstrate bias controlled single-electron charging of a single quantum dot. Neutral, single, and double charged excitons are identified in the optical spectra. At high magnetic fields one Zeeman component of the single charged exciton is found to be quenched, which is attributed to the competing effects of tunneling and spin-flip processes. Our experimental data are in good agreement with theoretical model calculations for situations where the spatial extent of the hole wave functions is smaller as compared to the electron wave functions.Comment: to be published in Physical Review B (rapid communication

Single and vertically coupled type II quantum dots in a perpendicular magnetic field: exciton groundstate properties

The properties of an exciton in a type II quantum dot are studied under the influence of a perpendicular applied magnetic field. The dot is modelled by a quantum disk with radius $R$, thickness $d$ and the electron is confined in the disk, whereas the hole is located in the barrier. The exciton energy and wavefunctions are calculated using a Hartree-Fock mesh method. We distinguish two different regimes, namely $d<<2R$ (the hole is located at the radial boundary of the disk) and $d>>2R$ (the hole is located above and below the disk), for which angular momentum $(l)$ transitions are predicted with increasing magnetic field. We also considered a system of two vertically coupled dots where now an extra parameter is introduced, namely the interdot distance $d_{z}$. For each $l_{h}$ and for a sufficient large magnetic field, the ground state becomes spontaneous symmetry broken in which the electron and the hole move towards one of the dots. This transition is induced by the Coulomb interaction and leads to a magnetic field induced dipole moment. No such symmetry broken ground states are found for a single dot (and for three vertically coupled symmetric quantum disks). For a system of two vertically coupled truncated cones, which is asymmetric from the start, we still find angular momentum transitions. For a symmetric system of three vertically coupled quantum disks, the system resembles for small $d_{z}$ the pillar-like regime of a single dot, where the hole tends to stay at the radial boundary, which induces angular momentum transitions with increasing magnetic field. For larger $d_{z}$ the hole can sit between the disks and the $l_{h}=0$ state remains the groundstate for the whole $B$-region.Comment: 11 pages, 16 figure