Modeling Photodetection at the Graphene/Ag2S Interface

Mixed-dimensional systems host interesting phenomena that involve electron and ion transport along or across the interface, with promising applications in optoelectronic and electrochemical devices. Herein, a heterosystem consisting of a graphene monolayer with a colloidal Ag2S nanocrystal film atop, in which both ions and electrons are involved in photoelectrical effects, is studied. An investigation of the transport at the interface in different configurations by using a phototransistor configuration with graphene as a charge-transport layer and semiconductor nanocrystals as a light-sensitive layer is performed. The key feature of charge transfer is investigated as a function of gate voltage, frequency, and incident light power. A simple analytical model of the photoresponse is developed, to gain information on the device operation, revealing that the nanocrystals transfer electrons to graphene in the dark, but the opposite process occurs upon illumination. A frequency-dependence analysis suggests a fractal interface between the two materials. This interface can be modified using solid-state electrochemical reactions, leading to the formation of metallic Ag particles, which affect the graphene properties by additional doping, while keeping the photoresponse. Overall, these results provide analytical tools and guidelines for the evaluation of coupled electron/ion transport in hybrid systems

Raman spectroscopy in layered hybrid organic-inorganic metal halide perovskites

The continuous progress in the synthesis and characterization of materials in the vast family of hybrid organic-inorganic metal halide perovskites (HOIPs) has been pushed by their exceptional properties mainly in optoelectronic applications. These works highlight the peculiar role of lattice vibrations, which strongly interact with electrons, resulting in coupled states affecting the optical properties. Among these materials, layered (2D) HOIPs have emerged as a promising material platform to address some issues of their three-dimensional counterparts, such as ambient stability and ion migration. Layered HOIPs consist of inorganic layers made of metal halide octahedra separated by layers composed of organic cations. They have attracted much interest not only for applications, but also for their rich phenomenology due to their crystal structure tunability. Here, we give an overview of the main experimental findings achieved via Raman spectroscopy in several configurations and set-ups, and how they contribute to shedding light on the complex structural nature of these fascinating materials. We focus on how the phonon spectrum comes from the interplay of several factors. First, the inorganic and organic parts, whose motions are coupled, contribute with their typical modes which are very different in energy. Nonetheless, the interaction between them is relevant, as it results in low-symmetry crystal structures. Then, the role of external stimuli, such as temperature and pressure, which induce phase transitions affecting the spectrum through change in symmetry of the lattice, octahedral tilting and arrangement of the molecules. Finally, the relevant role of the coupling between the charge carriers and optical phonons is highlighted

High performance bilayer-graphene Terahertz detectors

We report bilayer-graphene field effect transistors operating as THz broadband photodetectors based on plasma-waves excitation. By employing wide-gate geometries or buried gate configurations, we achieve a responsivity $\sim 1.2V/W (1.3 mA/W)$ and a noise equivalent power $\sim 2\times 10^{-9} W/Hz^{-1/2}$ in the 0.29-0.38 THz range, in photovoltage and photocurrent mode. The potential of this technology for scalability to higher frequencies and the development of flexible devices makes our approach competitive for a future generation of THz detection systems.Comment: 8 pages, 5 figures. Submitted to Applied Physics Letter

Raman shifts in MBE‐grown SixGe1 − x − ySny alloys with large Si content

We examine the Raman shift in silicon–germanium–tin alloys with high silicon content grown on a germanium virtual substrate by molecular beam epitaxy. The Raman shifts of the three most prominent modes, Si–Si, Si–Ge, and Ge–Ge, are measured and compared with results in previous literature. We analyze and fit the dependence of the three modes on the composition and strain of the semiconductor alloys. We also demonstrate the calculation of the composition and strain of SixGe1 − x − ySny from the Raman shifts alone, based on the fitted relationships. Our analysis extends previous results to samples lattice matched on Ge and with higher Si content than in prior comprehensive Raman analyses, thus making Raman measurements as a local, fast, and nondestructive characterization technique accessible for a wider compositional range of these ternary alloys for silicon-based photonic and microelectronic devices.Deutsche Forschungsgemeinschaft http://dx.doi.org/10.13039/501100001659Peer Reviewe

Reduction of moisture sensitivity of PbS quantum dot solar cells by incorporation of reduced graphene oxide

PbS nanocrystals are an important narrow-gap material for solar cells and photodetectors. Nevertheless, their application may be limited because device performance can be affected by atmospheric conditions. Indeed, the presence of oxygen and/or water can degrade the active layers, possibly leading to device failure. Strategies to address this issue are therefore actively explored. Here we report a solution-processed PbS quantum dot solar cell, consisting of a PbS-silane functionalized reduced graphene oxide (PbS-rGO) layer on top of the PbS absorber film, which enhances device stability, especially when the solar cells are exposed to moisture. Power conversion efficiency (PCE) measurements demonstrate a slower degradation under continuous illumination for solar cells with PbS-rGO. When storing the samples under saturated water vapor, differences are even more remarkable: with PbS-rGO the solar cells essentially maintain their initial PCE, while the PCE of the PbS reference devices is reduced by 50% after 5 days. Scanning electron microscopy, energy dispersive X-ray and X-ray photoelectron spectroscopy reveal the damage to the PbS films and the formation of PbSOX crystals in the PbS reference devices. Such crystals are not observed in the PbS-rGO devices, further supporting the importance of the PbSrGO barrier layer