Pathologies respiratoires liées à l'exposition professionnelle à l'amiante (étude de 63 cas d'expertises médicales )

TOURS-BU Médecine (372612103) / SudocPARIS-BIUM (751062103) / SudocSudocFranceF

L'Allergie alimentaire chez l'alcoolique chronique et l'alcool dans l'allergie alimentaire (à propos de 38 cas)

TOURS-BU Sciences Pharmacie (372612104) / SudocSudocFranceF

Colloque sur Lascaux

Roussot Alain, Sonneville-Bordes Denise. Colloque sur Lascaux. In: Paléo, n°2,1990. pp. 211-216

Polyamorphic transitions in silica glass

International audienc

One-Year Mental and Physical Health Assessment in Survivors after Extracorporeal Membrane Oxygenation for COVID-19–related Acute Respiratory Distress Syndrome

International audienceRationale: Long-term outcomes of patients with coronavirus disease (COVID-19)-related acute respiratory distress syndrome treated with extracorporeal membrane oxygenation (ECMO) are unknown. Objectives: To assess physical examination, pulmonary function tests, anxiety, depression, post-traumatic stress disorder and quality of life at 6 and 12 months after ECMO onset. Methods: Multicenter, prospective study in patients who received ECMO for COVID-19 acute respiratory distress syndrome from March to June 2020 and survived hospital discharge. Measurements and Main Results: Of 80 eligible patients, 62 were enrolled in seven French ICUs. ECMO and invasive mechanical ventilation duration were 18 (11-25) and 36 (27-62) days, respectively. All were alive, but only 19/50 (38%) returned to work and 13/42 (31%) had recovered a normal sex drive at 1 year. Pulmonary function tests were almost normal at 6 months, except for DlCO, which was still impaired at 12 months. Mental health, role-emotional, and role-physical were the most impaired domain compared with patients receiving ECMO who did not have COVID-19. One year after ICU admission, 19/43 (44%) patients had significant anxiety, 18/43 (42%) had depression symptoms, and 21/50 (42%) were at risk for post-traumatic stress disorders. Conclusions: Despite the partial recovery of the lung function tests at 1 year, the physical and psychological function of this population remains impaired. Based on the comparison with long-term follow-up of patients receiving ECMO who did not have COVID-19, poor mental and physical health may be more related to COVID-19 than to ECMO in itself, although this needs confirmation

Impact of a Postintensive Care Unit Multidisciplinary Follow-up on the Quality of Life (SUIVI-REA): Protocol for a Multicenter Randomized Controlled Trial

International audienceBackground: Critically ill patients are at risk of developing a postintensive care syndrome (PICS), which is characterized by physical, psychological, and cognitive impairments and which dramatically impacts the patient's quality of life (QoL). No intervention has been shown to improve QoL. We hypothesized that a medical, psychological, and social follow-up would improve QoL by mitigating the PICS. Objective: This multicenter, randomized controlled trial (SUIVI-REA) aims to compare a multidisciplinary follow-up with a standard postintensive care unit (ICU) follow-up. Methods: Patients were randomized to the control or intervention arm. In the intervention arm, multidisciplinary follow-up involved medical, psychological, and social evaluation at ICU discharge and at 3, 6, and 12 months thereafter. In the placebo group, patients were seen only at 12 months by the multidisciplinary team. Baseline characteristics at ICU discharge were collected for all patients. The primary outcome was QoL at 1 year, assessed using the Euro Quality of Life-5 dimensions (EQ5D). Secondary outcomes were mortality, cognitive, psychological, and functional status; social and professional reintegration; and the rate of rehospitalization and outpatient consultations at 1 year. Results: The study was funded by the Ministry of Health in June 2010. It was approved by the Ethics Committee on July 8, 2011. The first and last patient were randomized on December 20, 2012, and September 1, 2017, respectively. A total of 546 patients were enrolled across 11 ICUs. At present, data management is ongoing, and all parties involved in the trial remain blinded. Conclusions: The SUVI-REA multicenter randomized controlled trial aims to assess whether a post-ICU multidisciplinary follow-up improves QoL at 1 year

Vertical pin diodes on large freestanding (100) diamond film

International audienceAmong conventional diamond orientations, (100) is preferred for future diamond electronics applications. Indeed, (100) diamond substrates are easier to polish, less expensive to produce and are believed to present better electronic quality. Moreover, the control of diamond’s doping for electronics is asymmetric as for other wide band gap semiconductors (e.g. GaN). The p-type doping of diamond by substituting boron to carbon is fairly easy and technologically mature. In contrast, the n-type conductivity of diamond is still difficult to realize. Even if phosphorus is the donor impurity in diamond that gives the highest n-type conductivities, n-type diamond remains an issue for the fabrication of diamond-based bipolar devices. This can explain that diamond community is more active on transistor than on pin (p-intrinsic-n) diode while this is essential for the emergence of diamond electronics.Over last decades diamond quality has been improved thanks to progress made in microwave plasma assisted chemical vapor deposition. In the case of boron p-type diamond, we find growth conditions allowing to grow thick and enlarged homoepilayers. The thickness was managed to be thick enough to separate the homoepilayer from the substrate thanks to laser cutting and polishing. We are now able to fabricate on demand freestanding p+-type diamond films. For phosphorus n-type homoepilayers, we found growth parameters allowing smooth surface with full incorporation of phosphorus in donor sites. We demonstrate that the miscut angle of the substrate is a crucial parameter.In this work, vertical bipolar power devices such as pin diodes were chosen as test structures. We made simulations (TCAD Finite Element Method) to determine the appropriate n+/n- stacking layers on p+ substrate to aim 2.5 kV of breakdown voltage. A dedicated boron-doped (~1020 B/cm3) p+ (100) freestanding film (~3x3 mm²) was fabricated with 3.5° of miscut angle for the following phosphorus doped homoepilayers. We develop growth engineering to ensure sharp interface between n+ and n- epilayers. The resulting structure was analysed by secondary ion mass spectrometry to determine the doping content and the thicknesses of the n+ and n- layers (230 nm with 2.5x1019 P/cm3 on top of 2240 nm with 2.3x1015 P/cm3). Fabrication of large area circular pin diodes (Φ = 200 µm) is under progress with classical Ti/Pt/Au as metal contact. Room temperature I(V) measurements under probes will follow: in forward mode, the current will be limited to an equivalent current density of 50 A/cm², while in reverse mode, the voltage will be progressively increased until a current of 50 nA. Such measurements will allow diodes mapping and cautious screening to avoid damaging. For diodes presenting highest electrical performances, optical beam induced current measurements will be done without voltage to evaluate sample properties (e.g. defects). We will show the full study and the main results obtained so far

Vertical pin diodes on large freestanding (100) diamond film

International audienceAmong conventional diamond orientations, (100) is preferred for future diamond electronics applications. Indeed, (100) diamond substrates are easier to polish, less expensive to produce and are believed to present better electronic quality. Moreover, the control of diamond’s doping for electronics is asymmetric as for other wide band gap semiconductors (e.g. GaN). The p-type doping of diamond by substituting boron to carbon is fairly easy and technologically mature. In contrast, the n-type conductivity of diamond is still difficult to realize. Even if phosphorus is the donor impurity in diamond that gives the highest n-type conductivities, n-type diamond remains an issue for the fabrication of diamond-based bipolar devices. This can explain that diamond community is more active on transistor than on pin (p-intrinsic-n) diode while this is essential for the emergence of diamond electronics.Over last decades diamond quality has been improved thanks to progress made in microwave plasma assisted chemical vapor deposition. In the case of boron p-type diamond, we find growth conditions allowing to grow thick and enlarged homoepilayers. The thickness was managed to be thick enough to separate the homoepilayer from the substrate thanks to laser cutting and polishing. We are now able to fabricate on demand freestanding p+-type diamond films. For phosphorus n-type homoepilayers, we found growth parameters allowing smooth surface with full incorporation of phosphorus in donor sites. We demonstrate that the miscut angle of the substrate is a crucial parameter.In this work, vertical bipolar power devices such as pin diodes were chosen as test structures. We made simulations (TCAD Finite Element Method) to determine the appropriate n+/n- stacking layers on p+ substrate to aim 2.5 kV of breakdown voltage. A dedicated boron-doped (~1020 B/cm3) p+ (100) freestanding film (~3x3 mm²) was fabricated with 3.5° of miscut angle for the following phosphorus doped homoepilayers. We develop growth engineering to ensure sharp interface between n+ and n- epilayers. The resulting structure was analysed by secondary ion mass spectrometry to determine the doping content and the thicknesses of the n+ and n- layers (230 nm with 2.5x1019 P/cm3 on top of 2240 nm with 2.3x1015 P/cm3). Fabrication of large area circular pin diodes (Φ = 200 µm) is under progress with classical Ti/Pt/Au as metal contact. Room temperature I(V) measurements under probes will follow: in forward mode, the current will be limited to an equivalent current density of 50 A/cm², while in reverse mode, the voltage will be progressively increased until a current of 50 nA. Such measurements will allow diodes mapping and cautious screening to avoid damaging. For diodes presenting highest electrical performances, optical beam induced current measurements will be done without voltage to evaluate sample properties (e.g. defects). We will show the full study and the main results obtained so far

Vertical pin diodes on large freestanding (100) diamond film

International audienceAmong conventional diamond orientations, (100) is preferred for future diamond electronics applications. Indeed, (100) diamond substrates are easier to polish, less expensive to produce and are believed to present better electronic quality. Moreover, the control of diamond’s doping for electronics is asymmetric as for other wide band gap semiconductors (e.g. GaN). The p-type doping of diamond by substituting boron to carbon is fairly easy and technologically mature. In contrast, the n-type conductivity of diamond is still difficult to realize. Even if phosphorus is the donor impurity in diamond that gives the highest n-type conductivities, n-type diamond remains an issue for the fabrication of diamond-based bipolar devices. This can explain that diamond community is more active on transistor than on pin (p-intrinsic-n) diode while this is essential for the emergence of diamond electronics.Over last decades diamond quality has been improved thanks to progress made in microwave plasma assisted chemical vapor deposition. In the case of boron p-type diamond, we find growth conditions allowing to grow thick and enlarged homoepilayers. The thickness was managed to be thick enough to separate the homoepilayer from the substrate thanks to laser cutting and polishing. We are now able to fabricate on demand freestanding p+-type diamond films. For phosphorus n-type homoepilayers, we found growth parameters allowing smooth surface with full incorporation of phosphorus in donor sites. We demonstrate that the miscut angle of the substrate is a crucial parameter.In this work, vertical bipolar power devices such as pin diodes were chosen as test structures. We made simulations (TCAD Finite Element Method) to determine the appropriate n+/n- stacking layers on p+ substrate to aim 2.5 kV of breakdown voltage. A dedicated boron-doped (~1020 B/cm3) p+ (100) freestanding film (~3x3 mm²) was fabricated with 3.5° of miscut angle for the following phosphorus doped homoepilayers. We develop growth engineering to ensure sharp interface between n+ and n- epilayers. The resulting structure was analysed by secondary ion mass spectrometry to determine the doping content and the thicknesses of the n+ and n- layers (230 nm with 2.5x1019 P/cm3 on top of 2240 nm with 2.3x1015 P/cm3). Fabrication of large area circular pin diodes (Φ = 200 µm) is under progress with classical Ti/Pt/Au as metal contact. Room temperature I(V) measurements under probes will follow: in forward mode, the current will be limited to an equivalent current density of 50 A/cm², while in reverse mode, the voltage will be progressively increased until a current of 50 nA. Such measurements will allow diodes mapping and cautious screening to avoid damaging. For diodes presenting highest electrical performances, optical beam induced current measurements will be done without voltage to evaluate sample properties (e.g. defects). We will show the full study and the main results obtained so far