Genotyping-by-sequencing-based identification of Arabidopsis pattern recognition receptor RLP32 recognizing proteobacterial translation initiation factor IF1

Activation of plant pattern-triggered immunity (PTI) relies on the recognition of microbe-derived structures, termed patterns, through plant-encoded surface-resident pattern recognition receptors (PRRs). We show that proteobacterial translation initiation factor 1 (IF1) triggers PTI in Arabidopsis thaliana and related Brassicaceae species. Unlike for most other immunogenic patterns, IF1 elicitor activity cannot be assigned to a small peptide epitope, suggesting that tertiary fold features are required for IF1 receptor activation. We have deployed natural variation in IF1 sensitivity to identify Arabidopsis leucine-rich repeat (LRR) receptor-like protein 32 (RLP32) as IF1 receptor using a restriction site-associated DNA sequencing approach. RLP32 confers IF1 sensitivity to rlp32 mutants, IF1-insensitive Arabidopsis accessions and IF1-insensitive Nicotiana benthamiana, binds IF1 specifically and forms complexes with LRR receptor kinases SOBIR1 and BAK1 to mediate signaling. Similar to other PRRs, RLP32 confers resistance to Pseudomonas syringae, highlighting an unexpectedly complex array of bacterial pattern sensors within a single plant species

Genotyping-by-sequencing-based identification of Arabidopsis pattern recognition receptor RLP32 recognizing proteobacterial translation initiation factor IF1

Activation of plant pattern-triggered immunity (PTI) relies on the recognition of microbe-derived structures, termed patterns, through plant-encoded surface-resident pattern recognition receptors (PRRs). We show that proteobacterial translation initiation factor 1 (IF1) triggers PTI in Arabidopsis thaliana and related Brassicaceae species. Unlike for most other immunogenic patterns, IF1 elicitor activity cannot be assigned to a small peptide epitope, suggesting that tertiary fold features are required for IF1 receptor activation. We have deployed natural variation in IF1 sensitivity to identify Arabidopsis leucine-rich repeat (LRR) receptor-like protein 32 (RLP32) as IF1 receptor using a restriction site-associated DNA sequencing approach. RLP32 confers IF1 sensitivity to rlp32 mutants, IF1-insensitive Arabidopsis accessions and IF1-insensitive Nicotiana benthamiana, binds IF1 specifically and forms complexes with LRR receptor kinases SOBIR1 and BAK1 to mediate signaling. Similar to other PRRs, RLP32 confers resistance to Pseudomonas syringae, highlighting an unexpectedly complex array of bacterial pattern sensors within a single plant species

High Brightness Electroluminescence of Non‐Carrier‐Injection QLEDs with Precise Layer Processing by Spontaneous Spreading Method

Abstract The luminescent properties and mechanisms of non‐carrier injection (NCI) mode quantum dot light‐emitting diodes (QLEDs) are explored in this work. The intermediate insulator electric layer, Poly(vinylidene fluoride‐trifluoroethylene‐chlorofluoroethylene) (P(VDF‐TrFE‐CFE)), effectively blocks carrier injection from the electrodes. Carriers for radiative recombination in the quantum dot (QD) layer are generated by the corresponding carrier generation complex layer under an AC electric field. In this investigation, the emission layer (EML), comprising distinct layers of Cd‐based quantum dots, is precisely regulated using the spontaneous spreading (SS) method. The work reveals that the thickness of the QDs in NCI‐QLEDs significantly influences the device's luminescent performance. In NCI‐QLEDs with a double QD layer as the EML, the device exhibits a maximum brightness of 1003.6 cd m⁻2 and a start‐up voltage of 7 root mean square voltage (VRMS). This brightness level represents the highest reported for vertical emission NCI‐QLEDs. All devices exhibit a broad range of driven voltages. Interestingly, luminescence is detected only during a half‐cycle of the driven signal, as indicated by transient time‐resolved spectrum test results. A system is established to analyze the luminescence mechanism comprehensively. Finally, a proposed carrier compounding mechanism sheds light on the behavior of NCI‐QLED devices