Extraordinary Magnetoresistance in Hybrid Semiconductor-Metal Systems

We show that extraordinary magnetoresistance (EMR) arises in systems consisting of two components; a semiconducting ring with a metallic inclusion embedded. The im- portant aspect of this discovery is that the system must have a quasi-two-dimensional character. Using the same materials and geometries for the samples as in experiments by Solin et al.[1;2], we show that such systems indeed exhibit a huge magnetoresistance. The magnetoresistance arises due to the switching of electrical current paths passing through the metallic inclusion. Diagrams illustrating the flow of the current density within the samples are utilised in discussion of the mechanism responsible for the magnetoresistance effect. Extensions are then suggested which may be applicable to the silver chalcogenides. Our theory offers an excellent description and explanation of experiments where a huge magnetoresistance has been discovered[2;3].Comment: 12 Pages, 5 Figure

Pengaruh Penggunaan Media Gambar Terhadapkemampuan Menulis Teks Berita Oleh Siswa Kelas VIII SMP Swasta Karya Murni Sidihoni Tahun Pembelajaran 2014/2015

Penelitian ini bertujuan untuk mengetahui pengaruh penggunaan media gambar terhadap kemampuan menulis teks berita siswa kelas VIII SMP Swasta Karya Murni Sidihoni tahun pembelajaran 2014/2015, yang berjumlah 120 orang dan yang menjadi sampel penlitian sebanyak 40 orang. a . Dari distribusi data yang diperoleh : 1) kelompok pre- test memiliki rata-rata 60,67 dengan standard deviasi 5,6 ; dan 2) kelompok post-test memiliki rata-rata 82,75 dengan standar deviasi sebesar 4,78.Hasil perhitungan uji normalitas diperoleh : 1) kelompok pre-test memperoleh harga LO (Lhitung) =0,1217 dan Lt (Ltabel) =0,1401. Ternyata Lhitung 2,02 pada taraf signifikasi 5%, maka hasil perhitungan uji hipotesis nihil (Ho) ditolak dan hipotesis alternatif (Ha) diterima. Hal ini membuktikan bahwa media gambar berpengaruh terhadap kemampuan menulis teks berita pada siswa kelas VIII SMP Swata Karya Murni Sidihoni Tahun Pembelajaran 2014/2015

Position-sensitive detector for the 6-meter optical telescope

The Position-Sensitive Detector (PSD) for photometrical and spectral observation on the 6-meter optical telescope of the Special Astrophysical Observatory (Russia) is described. The PSD consists of a position-sensitive tube, amplifiers of output signals, analog-to-digital converters (ADC) and a digital logic plate, which produces a signal for ADC start and an external strob pulse for reading information by registration system. If necessary, the thermoelectric cooler can be used. The position-sensitive tube has the following main elements: a photocathode, electrodes of inverting optics, a block of microchannel plates (MCP) and a position-sensitive collector of quadrant type. The main parameters of the PSD are the diameter of the sensitive surface is 25 mm, the spatial resolution is better than 100 (\mu)m in the centre and a little worse on the periphery; the dead time is near 0.5 (\mu)s; the detection quantum efficiency is defined by the photocathode and it is not less than 0.1, as a rule; dark current is about hundreds of cps, or less, when cooling. PSD spectral sensitivity depends on the type of photocathode and input window material. We use a multialkali photocathode and a fiber or UV-glass, which gives the short- wave cut of 360 nm or 250 nm, respectively.Comment: 4 pages, 7 figures, to be published in Nuclear Instruments & Methods in Physics Researc

The Effect of Transfer Printing on Pentacene Thin-Film Crystal Structure

The thermal deposition and transfer Printing method had been used to produce pentacene thin-films on SiO2/Si and plastic substrates (PMMA and PVP), respectively. X-ray diffraction patterns of pentacene thin films showed reflections associated with highly ordered polycrystalline films and a coexistence of two polymorph phases classified by their d-spacing, d(001): 14.4 and 15.4 A.The dependence of the c-axis correlation length and the phase fraction on the film thickness and printing temperature were measured. A transition from the 15.4 A phase towards 14.4 A phase was also observed with increasing film thickness. An increase in the c-axis correlation length of approximately 12% ~16% was observed for Pn films transfer printed onto a PMMA coated PET substrate at 100~120 C as compared to as-grown Pn films on SiO2/Si substrates. The transfer printing method is shown to be an attractive for the fabrication of pentacene thin-film transistors on flexible substrates partly because of the resulting improvement in the quality of the pentacene film.Comment: 5 pages, 5 figure

Multifunctional semiconductor micro-Hall devices for magnetic, electric, and photo-detection

We report the real-space voltage response of InSb/AlInSb micro-Hall devices to local photo-excitation, electric, and magnetic fields at room temperature using scanning probe microscopy. We show that the ultrafast generation of localised photocarriers results in conductance perturbations analogous to those produced by local electric fields. Experimental results are in good agreement with tight-binding transport calculations in the diffusive regime. The magnetic, photo, and charge sensitivity of a 2 μm wide probe are evaluated at a 10 μA bias current in the Johnson noise limit (valid at measurement frequencies > 10 kHz) to be, respectively, 500 nT/√Hz; 20 pW/√Hz (λ = 635 nm) comparable to commercial photoconductive detectors; and 0.05 e/√Hz comparable to that of single electron transistors. These results demonstrate the remarkably versatile sensing attributes of simple semiconductor micro-Hall devices that can be applied to a host of imaging and sensing applications

Linear magnetoresistance in commercial n-type silicon due to inhomogeneous doping

Free electron theory tells us that resistivity is independent of magnetic field. In fact, most observations match the semiclassical prediction of a magnetoresistance that is quadratic at low fields before saturating. However, a non-saturating linear magnetoresistance has been observed in exotic semiconductors such as silver chalcogenides, lightly-doped InSb, N-doped InAs, MnAs-GaAs composites, PrFeAsO, and epitaxial graphene. Here we report the observation of a large linear magnetoresistance in the ohmic regime in commonplace commercial n-type silicon wafer. It is well-described by a classical model of spatially fluctuating donor densities, and may be amplified by altering the aspect ratio of the sample to enhance current-jetting: increasing the width tenfold increased the magnetoresistance at 8 T from 445 % to 4707 % at 35 K. This physical picture may well offer insights into the large magnetoresistances recently observed in n-type and p-type Si in the non-ohmic regime.Comment: submitted to Nature Material

Electronic polymers in lipid membranes

Electrical interfaces between biological cells and man-made electrical devices exist in many forms, but it remains a challenge to bridge the different mechanical and chemical environments of electronic conductors (metals, semiconductors) and biosystems. Here we demonstrate soft electrical interfaces, by integrating the metallic polymer PEDOT-S into lipid membranes. By preparing complexes between alkyl-ammonium salts and PEDOT-S we were able to integrate PEDOT-S into both liposomes and in lipid bilayers on solid surfaces. This is a step towards efficient electronic conduction within lipid membranes. We also demonstrate that the PEDOT-S@alkyl-ammonium:lipid hybrid structures created in this work affect ion channels in the membrane of Xenopus oocytes, which shows the possibility to access and control cell membrane structures with conductive polyelectrolytes