TiAl-based Ohmic Contacts to p-type 4H-SiC

This paper describes successfully formed ohmic contacts to p-type 4H-SiC based on titanium-aluminum alloys. Four different metallization structures were examined, varying in aluminum layer thickness (25, 50, 75, 100 nm) and with constant thickness of the titanium layer (50 nm). Structures were annealed within the temperature range of 800°C - 1100°C and then electrically characterized. The best electrical parameters and linear, ohmic character of contacts demonstrated structures with Al layer thickness equal or greater than that of Ti layer and annealed at temperatures of 1000°C or higher

Modelling and Simulation of Normally-off AlGaN/GaN MOS-HEMTs

The article presents the results of modelling and simulation of normally-off AlGaN/GaN MOS-HEMT transistors. The effect of the resistivity of the GaN:C layer, the channel mobility and the use of high- dielectrics on the electrical characteristics of the transistor has been examined. It has been shown that a low leakage current of less than 10-6 A/mm can be achieved for the acceptor dopant concentration at the level of 5x1015 cm-3. The limitation of the maximum on-state current due to the low carrier channel mobility has been shown. It has also been demonstrated that the use of HfO2, instead of SiO2, as a gate dielectric increases on-state current above 0.7A/mm and reduces the negative influence of the charge accumulated in the dielectric layer

Influence of spatial distribution and the type of material on the occurrence of bandgaps in phononic crystals

The study investigated the effect of the fill factor, lattice constant, and the shape and type of meta-atom material on the reduction of mechanical wave transmission in quasi-two-dimensional phononic structures. A finite difference algorithm in the time domain was used for the analysis, and the obtained time series were converted into the frequency domain using the discrete Fourier transform. The use of materials with large differences in acoustic impedance allowed to determine the influence of the meta-atom material on the propagation of the mechanical wave

Processing of printed circuit boards using a 532 nm green laser

The paper describes a research on assessing the quality of edges resulting from the interaction of laser pulses with a material of rigid and flexible printed circuits. A modern Nd:YVO4 crystal diode-pumped solid-state laser generating a 532 nm wavelength radiation with a nanosecond pulse time was used for the research. Influence of laser parameters such as beam power and pulse repetition frequency on a heat affected zone and carbonization was investigated. Quality and morphology of laser-cut substrates were analyzed by optical microscopy. High quality laser cutting of printed circuit board substrates was obtained without delamination and surface damage, with a minimal carbonization and heat affected zone. The developed process was implemented on the printed circuit assembly line

Minimizing the number of layers of the quasi one-dimensional phononic structures

In the work, multi-criteria optimization of phononic structures was performed to minimize the transmission in the frequency range of acoustic waves, eliminate high transmission peaks with a small half-width inside of the band gap, and what was the most important part of the work – to minimize the number of layers in the structure. Two types of the genetic algorithm were compared in the study. The first one was characterized by a constant number of layers (GACL) of the phononic structure of each individual in each population. Then, the algorithm was run for a different number of layers, as a result of which the structures with the best value of the objective function were determined. In the second version of the algorithm, individuals in populations had a variable number of layers (GAVL) which required a different type of target function and crossover procedure. The transmission for quasi-one-dimensional phononic structures was determined with the use of the transfer matrix method algorithm. Based on the research, it can be concluded that the developed GAVL algorithm with an appropriately selected objective function achieved optimal solutions in a much smaller number of iterations than the GACL algorithm, and the value of the k parameter below 1 leads to faster achievement of the optimal structure

The Influence of Post-Oxidation Annealing Process in O2 and N2O on the Quality of Al/SiO2/n-Type 4H-SiC MOS Interface

abstractEN: The effect of the n-type 4H-SiC (0001) oxidation in wet O2 at temperature of 1175 °C followed by low temperature annealing in N2O at temperature of 800C for 2 or 4 hours followed by high temperature annealing in nitrogen ambient on nitrogen distribution in silicon dioxide was investigated. It was shown that the oxidation and annealing have a strong impact on the behavior of electrical parameters of MOS capacitors using the oxides as gate dielectric what is probably an effect of nitrogen incorporation. The explanation of the observed electrical properties is included.score: 5collation: 753-75

A Review: Inductively Coupled Plasma Reactive Ion Etching of Silicon Carbide

The inductively coupled plasma reactive ion etching (ICP-RIE) is a selective dry etching method used in fabrication technology of various semiconductor devices. The etching is used to form non-planar microstructures—trenches or mesa structures, and tilted sidewalls with a controlled angle. The ICP-RIE method combining a high finishing accuracy and reproducibility is excellent for etching hard materials, such as SiC, GaN or diamond. The paper presents a review of silicon carbide etching—principles of the ICP-RIE method, the results of SiC etching and undesired phenomena of the ICP-RIE process are presented. The article includes SEM photos and experimental results obtained from different ICP-RIE processes. The influence of O2 addition to the SF6 plasma as well as the change of both RIE and ICP power on the etching rate of the Cr mask used in processes and on the selectivity of SiC/Cr etching are reported for the first time. SiC is an attractive semiconductor with many excellent properties, that can bring huge potential benefits thorough advances in submicron semiconductor processing technology. Recently, there has been an interest in SiC due to its potential wide application in power electronics, in particular in automotive, renewable energy and rail transport

Mechanical vibrations: recent trends and engineering applications

Although the study of oscillatory motion has a long history, going back four centuries, it is still an active subject of scientific research. In this review paper prospective research directions in the field of mechanical vibrations were pointed out. Four groups of important issues in which advanced research is conducted were discussed. The first are energy harvester devices, thanks to which we can obtain or save significant amounts of energy, and thus reduce the amount of greenhouse gases. The next discussed issue helps in the design of structures using vibrations and describes the algorithms that allow to identify and search for optimal parameters for the devices being developed. The next section describes vibration in multi-body systems and modal analysis, which are key to understanding the phenomena in vibrating machines. The last part describes the properties of granulated materials from which modern, intelligent vacuum-packed particles are made. They are used, for example, as intelligent vibration damping devices.Web of Science701art. no. e14035

Oxidation Process of SiC by RTP Technique

score: 0collation: 529-53