A Scalable Asynchronous Distributed Algorithm for Topic Modeling

Learning meaningful topic models with massive document collections which contain millions of documents and billions of tokens is challenging because of two reasons: First, one needs to deal with a large number of topics (typically in the order of thousands). Second, one needs a scalable and efficient way of distributing the computation across multiple machines. In this paper we present a novel algorithm F+Nomad LDA which simultaneously tackles both these problems. In order to handle large number of topics we use an appropriately modified Fenwick tree. This data structure allows us to sample from a multinomial distribution over $T$ items in $O(\log T)$ time. Moreover, when topic counts change the data structure can be updated in $O(\log T)$ time. In order to distribute the computation across multiple processor we present a novel asynchronous framework inspired by the Nomad algorithm of \cite{YunYuHsietal13}. We show that F+Nomad LDA significantly outperform state-of-the-art on massive problems which involve millions of documents, billions of words, and thousands of topics

Ionization potentials in the limit of large atomic number

By extrapolating the energies of non-relativistic atoms and their ions with up to 3000 electrons within Kohn-Sham density functional theory, we find that the ionization potential remains finite and increases across a row, even as $Z\rightarrow\infty$. The local density approximation becomes chemically accurate (and possibly exact) in some cases. Extended Thomas-Fermi theory matches the shell-average of both the ionization potential and density change. Exact results are given in the limit of weak electron-electron repulsion.Comment: 4 pages, 5 figure

Thermoelectric properties of Zn_5Sb_4In_(2-δ)(δ=0.15)

The polymorphic intermetallic compound Zn_5Sb_4In_(2−δ) (δ = 0.15(3)) shows promising thermoelectric properties at low temperatures, approaching a figure of merit ZT of 0.3 at 300 K. However, thermopower and electrical resistivity changes discontinuously at around 220 K. Measurement of the specific heat locates the previously unknown temperature of the order-disorder phase transition at around 180 K. Investigation of the charge carrier concentration and mobility by Hall measurements and infrared reflection spectroscopy indicate a mixed conduction behavior and the activation of charge carriers at temperatures above 220 K. Zn_5Sb_4In_(2−δ) has a low thermal stability, and at temperatures above 470 K samples decompose into a mixture of Zn, InSb, and Zn_4Sb_3

Ellipsometric study of InGaAs MODFET material

In(x)Ga(1-x)As based MODFET (modulation doped field effect transistor) material was grown by molecular beam epitaxy on semi-insulating InP substrates. Several structures were made, including lattice matched and strained layer InGaAs. All structures also included several layers of In(0.52)Al(0.48)As. Variable angle spectroscopic ellipsometry was used to characterize the structures. The experimental data, together with the calibration function for the constituent materials, were analyzed to yield the thickness of all the layers of the MODFET structure. Results of the ellipsometrically determined thicknesses compare very well with the reflection high energy electron diffraction in situ thickness measurements

Dielectric function of InGaAs in the visible

Measurements are reported of the dielectric function of thermodynamically stable In(x)Ga(1-x)As in the composition range 0.3 equal to or less than X = to or less than 0.7. The optically thick samples of InGaAs were made by molecular beam epitaxy (MBE) in the range 0.4 = to or less than X = to or less than 0.7 and by metal-organic chemical vapor deposition (MOCVD) for X = 0.3. The MBE made samples, usually 1 micron thick, were grown on semi-insulating InP and included a strain release structure. The MOCVD sample was grown on GaAs and was 2 microns thick. The dielectric functions were measured by variable angle spectroscopic ellipsometry in the range 1.55 to 4.4 eV. The data was analyzed assuming an optically thick InGaAs material with an oxide layer on top. The thickness of this layer was estimated by comparing the results for the InP lattice matched material, i.e., X = 0.53, with results published in the literature. The top oxide layer mathematically for X = 0.3 and X = 0.53 was removed to get the dielectric function of the bare InGaAs. In addition, the dielectric function of GaAs in vacuum, after a protective arsenic layer was removed. The dielectric functions for X = 0, 0.3, and 0.53 together with the X = 1 result from the literature to evaluate an algorithm for calculating the dielectric function of InGaAs for an arbitrary value of X(0 = to or less than X = to or less than 1) were used. Results of the dielectric function calculated using the algorithm were compared with experimental data

High-frequency performance of Schottky source/drain silicon pMOS devices

A radio-frequency performance of 85-nm gate-length p-type Schottky barrier (SB) with PtSi source/drain materials is investigated. The impact of silicidation annealing temperature on the high-frequency behavior of SB MOSFETs is analyzed using an extrinsic small-signal equivalent circuit. It is demonstrated that the current drive and the gate transconductance strongly depend on the silicidation anneal temperature, whereas the unity-gain cutoff frequency of the measured devices remains nearly unchanged

Incidence, outcomes, and risk factors of pleural effusion in patients receiving dasatinib therapy for Philadelphia chromosome-positive leukemia.

Dasatinib, a second-generation BCR-ABL1 tyrosine kinase inhibitor, is approved for the treatment of chronic myeloid leukemia and Philadelphia chromosome-positive acute lymphoblastic leukemia, both as first-line therapy and after imatinib intolerance or resistance. While generally well tolerated, dasatinib has been associated with a higher risk for pleural effusions. Frequency, risk factors, and outcomes associated with pleural effusion were assessed in two phase 3 trials (DASISION and 034/Dose-optimization) and a pooled population of 11 trials that evaluated patients with chronic myeloid leukemia and Philadelphia chromosome-positive acute lymphoblastic leukemia treated with dasatinib (including DASISION and 034/Dose-optimization). In this largest assessment of patients across the dasatinib clinical trial program (N=2712), pleural effusion developed in 6-9% of patients at risk annually in DASISION, and in 5-15% of patients at risk annually in 034/Dose-optimization. With a minimum follow up of 5 and 7 years, drug-related pleural effusion occurred in 28% of patients in DASISION and in 33% of patients in 034/Dose-optimization, respectively. A significant risk factor identified for developing pleural effusion by a multivariate analysis was age. We found that overall responses to dasatinib, progression-free survival, and overall survival were similar in patients who developed pleural effusion and in patients who did not. clinicaltrials.gov identifier 00481247; 00123474

The Relation Between Self-Reported Activity and Fitness Levels in Primary Care

Please refer to the pdf version of the abstract located adjacent to the title