Drug discovery: A jump-start for electroceuticals

Imagine a day when electrical impulses are a mainstay of medical treatment. Your clinician will administer electroceuticals that target individual nerve fibres or specific brain circuits to treat an array of conditions. These will modulate the neural impulses that control the body, repair lost function and reinstate a healthy balance. They could coax insulin from islet cells, regulate food intake, and control inflammation. They may treat pressing major ailments such as hypertension, diabetes, obesity, heart failure, pulmonary and vascular disease. All this is within reach, we argue, if researchers from disparate disciplines in academia and industry work together. We herewith outline what needs to be done to bring about electroceuticals, and unveil a public-private research initiative and award that aim to catalyse the field

Hf-based high-k materials for Si nanocrystal floating gate memories

Pure and Si-rich HfO2 layers fabricated by radio frequency sputtering were utilized as alternative tunnel oxide layers for high-k/Si-nanocrystals-SiO2/SiO2 memory structures. The effect of Si incorporation on the properties of Hf-based tunnel layer was investigated. The Si-rich SiO2 active layers were used as charge storage layers, and their properties were studied versus deposition conditions and annealing treatment. The capacitance-voltage measurements were performed to study the charge trapping characteristics of these structures. It was shown that with specific deposition conditions and annealing treatment, a large memory window of about 6.8 V is achievable at a sweeping voltage of ± 6 V, indicating the utility of these stack structures for low-operating-voltage nonvolatile memory devices

Solar cell process development in the european integrated project crystalclear

CrystalClear is a large integrated project funded by the European Commission that aims to drastically reduce the cost of crystalline Si PV modules, down to 1 Euro/Wp. Among the different subprojects, the one dealing with the development of advanced solar cells is relatively large (with 11 partners out of the 15 Crystal Clear partners taking part) and has a crucial role. The goal of the subproject is to develop cell design concepts and manufacturing processes that would enable a reduction in the order of 40% of the cell processing costs per Wp. In this paper, we give an overview of all the development work that has taken place in the CrystalClear solar cells subproject so far. World class results have been achieved, particularly on high efficiency cells on Si ribbons, and on industrial-type solar cells on very thin (120 (j.m thick) substrates

Superconductivity in Silicon Nanostructures

We present the findings of the superconductivity in the silicon nanostructures prepared by short time diffusion of boron after preliminary oxidation of the n-type Si (100) surface. These Si-based nanostructures represent the p-type high mobility silicon quantum well (Si-QW) confined by the delta - barriers heavily doped with boron. The ESR studies show that the delta - barriers appear to consist of the trigonal dipole centers, B(+)-B(-), which are caused by the negative-U reconstruction of the shallow boron acceptors, 2B(0)=>B(+)-B(-). The temperature and magnetic field dependencies of the resistance, thermo-emf, specific heat and magnetic susceptibility demonstrate that the high temperature superconductivity observed seems to result from the transfer of the small hole bipolarons through these negative-U dipole centers of boron at the Si-QW - delta - barrier interfaces. The value of the superconductor energy gap obtained is in a good agreement with the data derived from the oscillations of the conductance in normal state and of the zero-resistance supercurrent in superconductor state as a function of the bias voltage. These oscillations appear to be correlated by on- and off-resonance tuning the two-dimensional subbands of holes with the Fermi energy in the superconductor delta - barriers. Finally, the proximity effect in the S- Si-QW -S structure is revealed by the findings of the multiple Andreev reflection (MAR) processes and the quantization of the supercurrent

Structural and electrical properties of Ge nanocrystals embedded in SiO2 by ion implantation and annealing

International audienc

Structural and electrical properties of Ge nanocrystals embedded in SiO2 by ion implantation and annealing

International audienc

Moderate temperature deposition of RF magnetron sputtered SnO2-based electron transporting layer for triple cation perovskite solar cells

Abstract The perovskite solar cells (PSCs) are still facing the two main challenges of stability and scalability to meet the requirements for their potential commercialization. Therefore, developing a uniform, efficient, high quality and cost-effective electron transport layer (ETL) thin film to achieve a stable PSC is one of the key factors to address these main issues. Magnetron sputtering deposition has been widely used for its high quality thin film deposition as well as its ability to deposit films uniformly on large area at the industrial scale. In this work, we report on the composition, structural, chemical state, and electronic properties of moderate temperature radio frequency (RF) sputtered SnO2. Ar and O2 are employed as plasma-sputtering and reactive gases, respectively. We demonstrate the possibility to grow a high quality and stable SnO2 thin films with high transport properties by reactive RF magnetron sputtering. Our findings show that PSC devices based on the sputtered SnO2 ETL have reached a power conversion efficiency up to 17.10% and an average operational lifetime over 200 h. These uniform sputtered SnO2 thin films with improved characteristics are promising for large photovoltaic modules and advanced optoelectronic devices