Algorithms for adaptive control of two-arm flexible manipulators under uncertainty

A nonlinear extension of model reference adaptive control (MRAC) technique is used to guide a double arm nonlinearizable robot manipulator with flexible links, driven by actuators collocated with joints subject to uncertain payload and inertia. The objective is to track a given simple linear and rigid but compatible dynamical model in real, possible stipulated time and within stipulated degree of accuracy of convergence while avoiding collision of the arms. The objective is attained by a specified signal adaptive feedback controller and by adaptive laws, both given in closed form. A case of 4 DOF manipulator illustrates the technique

Quantum well behavior of single stacking fault 3C inclusions in 4H-SiC p-i-n diodes studied by ballistic electron emission microscopy

We show that "single" stacking fault 3C inclusions formed in 4H-SiC p-i-n diodes behave as electron quantum wells (QWs) with the QW energy depth of ???0.25 eV below 4H-SiC conduction band minimum, by measuring the Schottky barriers on and away from inclusions with ballistic electron emission microscopy (BEEM). The Schottky barrier on the 4H area ([11-20] oriented) is measured to be essentially the same as (0001) plane studied previously, indicating that the interface pinning effects on both crystal faces are almost identical. Additionally, BEEM current amplitude is observed to be very sensitive to subsurface damage induced by polishing.open91

Growth and Characterization of 3C-SiC and 2H-AIN/GaN Films and Devices Produced on Step-Free 4H-SiC Mesa Substrates

While previously published experimental results have shown that the step-free (0 0 0 1) 4H-SiC mesa growth surface uniquely enables radical improvement of 3C-SiC and 2H-AlN/GaN heteroepitaxial film quality (greater than 100-fold reduction in extended defect densities), important aspects of the step-free mesa heterofilm growth processes and resulting electronic device benefits remain to be more fully elucidated. This paper reviews and updates recent ongoing studies of 3C-SiC and 2H-AlN/GaN heteroepilayers grown on top of 4H-SiC mesas. For both 3C-SiC and AlN/GaN films nucleated on 4H-SiC mesas rendered completely free of atomic-scale surface steps, TEM studies reveal that relaxation of heterofilm strain arising from in-plane film/substrate lattice constant mismatch occurs in a remarkably benign manner that avoids formation of threading dislocations in the heteroepilayer. In particular, relaxation appears to occur via nucleation and inward lateral glide of near-interfacial dislocation half-loops from the mesa sidewalls. Preliminary studies of homojunction diodes implemented in 3C-SiC and AlN/GaN heterolayers demonstrate improved electrical performance compared with much more defective heterofilms grown on neighbouring stepped 4H-SiC mesas. Recombination-enhanced dislocation motion known to degrade forward-biased 4H-SiC bipolar diodes has been completely absent from our initial studies of 3C-SiC diodes, including diodes implemented on defective 3C-SiC heterolayers grown on stepped 4H-SiC mesas

The waxing and waning of mnemic neglect.

The mechanisms underlying mnemic neglect (MN) and the conditions under which it waxes and wanes are not yet fully understood. The research in this article examined conditions during both encoding and recall that could potentially moderate the MN effect and that could provide cues about the cognitive mechanisms that contribute to the effect. Results showed that MN: (a) emerged after recall was delayed (Study 1); (b) could not be attributed to differential behavior looking time (Study 2); (c) did not emerge under cognitive load (Study 3); and (d) was not linked to the perceived extremity, importance, or evaluations of the behaviors. However, how informative the behaviors were perceived for personality may contribute to the effect (Study 4). Finally, results from Study 3 and Study 4 showed that when participants were cognitively occupied during encoding, the MN effect waned. Implications of these collective findings for the MN phenomenon were discussed

Assessment of the Variability in Influenza A(H1N1) Vaccine Effectiveness Estimates Dependent on Outcome and Methodological Approach

Estimation of Influenza vaccine effectiveness (VE) varies with study design, clinical outcome 10 considered and statistical methodology used. By estimating VE using differing outcomes and 11 statistical methods on the same cohort of individuals the variability in the estimates produced can 12 be better understood. The Pandemic Influenza Primary Care Reporting (PIPeR) cohort of approximately 193,000 individuals 14 was used to estimate pandemic VE in Scotland during season 2009-10. VE results for three 15 outcomes; influenza related consultations, virological confirmed influenza and death were 16 considered. Use of individualised records allowed all models to be adjusted for age, sex, 17 deprivation, risk status relating to chronic illnesses, seasonal vaccination status and a marker of the 18 individual’s propensity to consult. For the consultation and death outcomes, VE was calculated by 19 comparing consultation rates in the unvaccinated and vaccinated groups, adjusted for the listed 20 factors, using both Cox and Poisson regression models. For the consultation outcome, the 21 unvaccinated group was split into individuals before vaccination and those never vaccinated to allow 22 for potential differences in the health seeking behaviour of these groups. For the virology outcome 23 estimates were calculated using a generalised additive logistic regression model. All models were 24 adjusted for time. Vaccine effect was demonstrated for the influenza-like illness consultation outcome using the Cox 26 model (VE=49% 95% CI (19%, 67%)) with lower estimates from the model splitting the before and 27 never vaccinated groups (VE=34.2% with 95% CI (-0.5%, 58.9%)). Vaccine effect was also illustrated 28 for overall mortality (VE=40% (95% CI 18%, 56%)) and a virological confirmed subset of symptomatic 29 individuals (VE=60% (95% CI -38%, 89%))