Estimation of background carrier concentration in fully depleted GaN films

Buffer leakage is an important parasitic loss mechanism in AlGaN/GaN HEMTs and hence various methods are employed to grow semi-insulating buffer layers. Quantification of carrier concentration in such buffers using conventional capacitance based profiling techniques is challenging due to their fully depleted nature even at zero bias voltages. We provide a simple and effective model to extract carrier concentrations in fully depleted GaN films using capacitance-voltage (C-V) measurements. Extensive mercury probe C-V profiling has been performed on GaN films of differing thicknesses and doping levels in order to validate this model. Carrier concentrations as extracted from both the conventional C-V technique for partially depleted films having the same doping concentration, and Hall measurements show excellent agreement with those predicted by the proposed model thus establishing the utility of this technique. This model can be readily extended to estimate background carrier concentrations from the depletion region capacitances of HEMT structures and fully depleted films of any class of semiconductor materials.Comment: 16 pages, 6 figure

Metagenomic approach towards bioprospection of novel biomolecule(s) and environmental bioremediation

Microorganisms have developed several physiological adaptations to survive within extreme ecological niches including environments contaminated with heavy metals, pesticides, polycyclic aromatic hydrocarbons, and nuclear wastes. Microorganisms in extreme habitat are potential source of “novel biomolecule(s)” such as whole microbial cells, extremozymes and extremolytes, significantly required for environmental, industrial, and red medical/pharmaceutical biotechnology. These novel biomolecule(s) are valuable resources and may help improve economic development. The scanty information about the factors governing the microbial growth within stressed environments is the major constraint in the recovery of novel biomolecule(s) from extreme habitats. Understanding the structure, metabolic capabilities, microbial physiology, and factors governing the composition and role of indigenous microorganism is the key to success of any study. In recent past the problems associated with classical cultivation techniques have been resolved by an emerging approach referred to as “metagenomics”. Metagenomic studies give an insight into details of the structure, metabolic and physiological capabilities of indigenous microbial communities. High-throughput sequencing technologies in conjunction with metagenomics has aided in the identification and characterization of novel culturable and uncultured microorganisms with unique capabilities. Metagenomic studies have been used for isolation and characterization of novel biomolecule(s) relevant for white, grey, and red biotechnologies. The major objective of this review is to discuss the applications of metagenomic approach for bioprospection of novel biomolecule(s) and environmental bioremediation.http://www.sciencedomain.org/journal/32am2018Genetic

Microbial biosorbent for remediation of dyes and heavy metals pollution: A green strategy for sustainable environment

Toxic wastes like heavy metals and dyes are released into the environment as a direct result of industrialization and technological progress. The biosorption of contaminants utilizes a variety of biomaterials. Biosorbents can adsorb toxic pollutants on their surface through various mechanisms like complexation, precipitation, etc. The quantity of sorption sites that are accessible on the surface of the biosorbent affects its effectiveness. Biosorption’s low cost, high efficiency, lack of nutrient requirements, and ability to regenerate the biosorbent are its main advantages over other treatment methods. Optimization of environmental conditions like temperature, pH, nutrient availability, and other factors is a prerequisite to achieving optimal biosorbent performance. Recent strategies include nanomaterials, genetic engineering, and biofilm-based remediation for various types of pollutants. The removal of hazardous dyes and heavy metals from wastewater using biosorbents is a strategy that is both efficient and sustainable. This review provides a perspective on the existing literature and brings it up-to-date by including the latest research and findings in the field

Recent technologies for transforming textile waste into value-added products:A review

The disposal of textile waste has become a growing issue worldwide. The rising consumption of clothing and textile materials has resulted in high waste generation. This could adversely impact environmental health, including humans, animals and plants. The three textile recycling methods can be divided into mechanical, chemical, and biological processes. There has been a focus on mechanical and chemical processes, pyrolysis, enzymatic hydrolysis, biological recycling, and microbial engineering in the area of textile waste managment. This review highlight the important parameters that affect the textile recycling performance and are significant for the success of the transformation process. To reach the zero-waste goal, textile recycling and converting this waste into value-added bioproducts are the necessary steps. The present review addresses the current status of textile recycling strategies, and the valorisation processes for converting textile waste materials into value-added products like biofuels, bioplastics, and others sustainable materials.</p

Study of Drain Injected Breakdown Mechanisms in AlGaN/GaN-on-SiC HEMTs

Breakdown mechanism in 0.25- μm gate length AlGaN/GaN-on-SiC iron doped high electron mobility transistors (HEMTs) with background carbon is investigated through the drain current injection technique. The measurement results reveal that it can be divided into two distinct stages according to the gate voltage levels. The first stage of the measured drain injected breakdown is mainly due to the initiation of the punchthrough process under the gate, and the second stage of breakdown is associated with the potential barrier between the unintentionally doped (UID) GaN and the Fe doped p-type GaN buffer layer which also has a higher carbon density. The electroluminescence (EL) results suggest that the first stage shows uniform punchthrough current flow, but localized leakage current flow associated with a snapback breakdown mechanism replaces the uniform punchthrough current flow and dominates the second stage. A 2D-TCAD simulation has been implemented and shows the current paths under uniform flow conditions

Evaluation of pulsed I-V analysis as validation tool of nonlinear RF models of GaN-based HFETs

This paper evaluates the applicability of pulsed I-V measurements as a tool for accurately extracting nonlinear gallium nitride (GaN)-based heterojunction field-effect transistor (HFET) models. Two wafers with the identical layer structure but different growth conditions have been investigated. A series of I-V measurements was performed under dc and pulsed conditions demonstrating a dramatic difference in the kink effect and current collapse (knee walkout) suggesting different trapping behaviors. However, when radio frequency (RF) I-V waveform measurements, utilizing active harmonic load-pull, were used to study the impact of these traps on the RF performance, both wafers gave good overall RF performance with no significant difference observed. This absence of correlation between pulsed I-V measurement results and RF performance raises a question about the applicability of pulsed I-V measurements alone as a tool for extracting nonlinear device models in the case of GaN HFETs

High frequency guided mode resonances in mass-loaded, thin film gallium nitride surface acoustic wave devices

We demonstrate high-frequency (> 3 GHz), high quality factor radio frequency (RF) resonators in unreleased thin film gallium nitride (GaN) on sapphire and silicon carbide substrates by exploiting acoustic guided mode (Lamb wave) resonances. The associated energy trapping, due to mass loading from the gold electrodes, allows us to efficiently excite these resonances from a 50 $\Omega$ input. The higher phase velocity, combined with lower electrode damping, enables high quality factors with moderate electrode pitch, and provides a viable route towards high-frequency piezoelectric devices. The GaN platform, with its ability to guide and localize high-frequency sound on the surface of a chip with access to high-performance active devices, will serve as a key building block for monolithically integrated RF front-ends.Comment: 5 pages, Submitted for revie