Temperature dependent asymmetry of the nonlocal spin-injection resistance: evidence for spin non-conserving interface scattering

We report nonlocal spin injection and detection experiments on mesoscopic Co-Al2O3-Cu spin valves. We have observed a temperature dependent asymmetry in the nonlocal resistance between parallel and antiparallel configurations of the magnetic injector and detector. This strongly supports the existence of a nonequilibrium resistance that depends on the relative orientation of the detector magnetization and the nonequilibrium magnetization in the normal metal providing evidence for increasing interface spin scattering with temperature.Comment: 5 pages, 4 figures, accepted for publication in PRL, minor corrections (affiliation, acknowledgements, typo

Dynamical Susceptibility in KDP-type Crysals above and below Tc II

The path probability method (PPM) in the tetrahedron-cactus approximation is applied to the Slater-Takagi model with dipole-dipole interaction for KH2PO4-type hydrogen-bonded ferroelectric crystals in order to derive a small dip structure in the real part of dynamical susceptibility observed at the transition temperature Tc. The dip structure can be ascribed to finite relaxation times of electric dipole moments responsible for the first order transition with contrast to the critical slowing down in the second order transition. The light scattering intensity which is related to the imaginary part of dynamical susceptibility is also calculated above and below the transition temperature and the obtained central peak structure is consistent with polarization fluctuation modes in Raman scattering experiments.Comment: 8 pages, 11 figure

Theory of thermal spin-charge coupling in electronic systems

The interplay between spin transport and thermoelectricity offers several novel ways of generating, manipulating, and detecting nonequilibrium spin in a wide range of materials. Here we formulate a phenomenological model in the spirit of the standard model of electrical spin injection to describe the electronic mechanism coupling charge, spin, and heat transport and employ the model to analyze several different geometries containing ferromagnetic (F) and nonmagnetic (N) regions: F, F/N, and F/N/F junctions which are subject to thermal gradients. We present analytical formulas for the spin accumulation and spin current profiles in those junctions that are valid for both tunnel and transparent (as well as intermediate) contacts. For F/N junctions we calculate the thermal spin injection efficiency and the spin accumulation induced nonequilibrium thermopower. We find conditions for countering thermal spin effects in the N region with electrical spin injection. This compensating effect should be particularly useful for distinguishing electronic from other mechanisms of spin injection by thermal gradients. For F/N/F junctions we analyze the differences in the nonequilibrium thermopower (and chemical potentials) for parallel and antiparallel orientations of the F magnetizations, as evidence and a quantitative measure of the spin accumulation in N. Furthermore, we study the Peltier and spin Peltier effects in F/N and F/N/F junctions and present analytical formulas for the heat evolution at the interfaces of isothermal junctions.Comment: to be published in PRB (in press), 19 pages, 19 figure

Delocalized Nature of the E'-delta Center in Amorphous Silicon Dioxide

We report an experimetal study by Electron Paramagnetic Resonance (EPR) of E'-delta point defect induced by gamma ray irradiation in amorphous SiO2. We obtained an estimetion of the intensity of the 10 mT doublet characterizing the EPR spectrum of such a defect arising from hyperfine interaction of the unpaired electron with a 29Si (I=1/2) nucleus. Moreover, determining the intensity ratio between this hyperfine doublet and the main resonance line of E'-delta center, we pointed out that unpaired electron wave function of this center is actually delocalized over four nearly equivalent silicon atoms.Comment: approved for publication in Physical Review Letter

Restrictions on modeling spin injection by resistor networks

Because of the technical difficulties of solving spin transport equations in inhomogeneous systems, different resistor networks are widely applied for modeling spin transport. By comparing an analytical solution for spin injection across a ferromagnet - paramagnet junction with a resistor model approach, its essential limitations stemming from inhomogeneous spin populations are clarified.Comment: To be published in a special issue of Semicond. Sci. Technol., Guest editor Prof. G. Landweh

Drift-diffusion model for spin-polarized transport in a non-degenerate 2DEG controlled by a spin-orbit interaction

We apply the Wigner function formalism to derive drift-diffusion transport equations for spin-polarized electrons in a III-V semiconductor single quantum well. Electron spin dynamics is controlled by the linear in momentum spin-orbit interaction. In a studied transport regime an electron momentum scattering rate is appreciably faster than spin dynamics. A set of transport equations is defined in terms of a particle density, spin density, and respective fluxes. The developed model allows studying of coherent dynamics of a non-equilibrium spin polarization. As an example, we consider a stationary transport regime for a heterostructure grown along the (0, 0, 1) crystallographic direction. Due to the interplay of the Rashba and Dresselhaus spin-orbit terms spin dynamics strongly depends on a transport direction. The model is consistent with results of pulse-probe measurement of spin coherence in strained semiconductor layers. It can be useful for studying properties of spin-polarized transport and modeling of spintronic devices operating in the diffusive transport regime.Comment: 16 pages, 3 figure

Spin transport in inhomogeneous magnetic fields: a proposal for Stern-Gerlach-like experiments with conduction electrons

Spin dynamics in spatially inhomogeneous magnetic fields is studied within the framework of Boltzmann theory. Stern-Gerlach-like separation of spin up and spin down electrons occurs in ballistic and diffusive regimes, before spin relaxation sets in. Transient dynamics and spectral response to time-dependent inhomogeneous magnetic fields are investigated, and possible experimental observations of our findings are discussed.Comment: 7 pages, 4 figures; revised and extended version, to appear in PR

Proof of the thermodynamical stability of the E' center in SiO2

The E' center is a paradigmatic radiation-induced defect in SiO2 whose peculiar EPR and hyperfine activity has been known since over 40 years. This center has been traditionally identified with a distorted, positively-charged oxygen vacancy V_O+. However, no direct proof of the stability of this defect has ever been provided, so that its identification is still strongly incomplete. Here we prove directly that distorted V_O+ is metastable and that it satisfies the key requirements for its identification as E', such as thermal and optical response, and activation-deactivation mechanisms.Comment: RevTeX 4 pages, 2 figure

Optical orientation in bipolar spintronic devices

Optical orientation is a highly efficient tool for the generation of nonequilibrium spin polarization in semiconductors. Combined with spin-polarized transport it offers new functionalities for conventional electronic devices, such as pn junction bipolar diodes or transistors. In nominally nonmagnetic junctions optical orientation can provide a source for spin capacitance--the bias-dependent nonequilibrium spin accumulation--or for spin-polarized current in bipolar spin-polarized solar cells. In magnetic junctions, the nonequilibrium spin polarization generated by spin orientation in a proximity of an equilibrium magnetization gives rise to the spin-voltaic effect (a realization of the Silsbee-Johnson coupling), enabling efficient control of electrical properties such as the I-V characteristics of the junctions by magnetic and optical fields. This article reviews the main results of investigations of spin-polarized and magnetic pn junctions, from spin capacitance to the spin-voltaic effect.Comment: 9 pages, 10 figures; appeared in the special issue of Semicond. Sci. Technol. on Optical Orientation, in honor of B. P. Zakharcheny

Structural relaxation of E' gamma centers in amorphous silica

We report experimental evidence of the existence of two variants of the E' gamma centers induced in silica by gamma rays at room temperature. The two variants are distinguishable by the fine features of their line shapes in paramagnetic resonance spectra. These features suggest that the two E' gamma differ for their topology. We find a thermally induced interconversion between the centers with an activation energy of about 34 meV. Hints are also found for the existence of a structural configuration of minimum energy and of a metastable state.Comment: 4 pages, 2 figures, submitted to Phys. Rev. Let