23 research outputs found

    Identification of novel breast cancer susceptibility loci in meta-analyses conducted among Asian and European descendants

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    Abstract: Known risk variants explain only a small proportion of breast cancer heritability, particularly in Asian women. To search for additional genetic susceptibility loci for breast cancer, here we perform a meta-analysis of data from genome-wide association studies (GWAS) conducted in Asians (24,206 cases and 24,775 controls) and European descendants (122,977 cases and 105,974 controls). We identified 31 potential novel loci with the lead variant showing an association with breast cancer risk at P < 5 × 10−8. The associations for 10 of these loci were replicated in an independent sample of 16,787 cases and 16,680 controls of Asian women (P < 0.05). In addition, we replicated the associations for 78 of the 166 known risk variants at P < 0.05 in Asians. These findings improve our understanding of breast cancer genetics and etiology and extend previous findings from studies of European descendants to Asian women

    Characterization and structural modification of polysilsesquioxanes for low dielectric constant (k) applications in deep sub-micron devices

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    A preliminary study on the thermal stability of different spin-on dielectrics (SODs) has been conducted and it is found that generally organic SODs exhibited lower thermal stability, both in terms of weight loss and the highest allowable temperature, compared to inorganic SODs. On the other hand, thin film characterization and thermal analysis techniques gave evidences which support the notion that the redistribution of Si-0 and Si-ll bonds is the reaction mechanism responsible for the chemical changes induced by heating. Curing of hydrogen silsesquioxane (HSQ) is found to be accompanied by weight loss, dimension change and change in dielectric properties. A three-stage curing model has been proposed based on the data collected.Doctor of Philosophy (SME

    Structured parallel simulation modeling and programming

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    Proceedings of the IEEE Annual Simulation Symposium135-142PSSY

    In-situ scanning electron microscope observation of electromigration-induced void growth in 30 nm 1/2 pitch Cu interconnect structures

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    In-situ electromigration tests have been performed inside a scanning electron microscope on 30 nm wide single damascene interconnects without vias, where a good resolution was obtained and drift velocities during void growth could be measured at 300 C. These tests showed direct evidence that the cathode end of the line, where a polycrystalline grain cluster encounters a bigger grain, can act as a flux divergent point of Cu diffusion. Moreover, it was found that a thicker barrier suppresses barrier/interface diffusivity of Cu atoms, thereby slowing down electromigration-induced void growth. It was also demonstrated that Cobalt based metal caps are beneficial to electromigration for advanced interconnects where thinner barriers are required.status: publishe

    Speculative parallel simulation with an adaptive throttle scheme

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    Proceedings Workshop on Parallel and Distributed Simulation116-12320
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