Dynamics of atom-surface interactions

Scattering techniques currently being used to examine the dynamics and energetics of gas-surface energy exchange processes and gas-surface reaction mechanisms are reviewed. In particular, recent inelastic scattering measurements are highlighted which are revealing the microscopic basis for collision-induced gas-surface energy exchange, e.g., which surface vibrational modes actively participate in translational energy accommodation. Reactive scattering and laser desorptive experiments which examine energy disposal in volatile products are also discussed. Finally, an efficient atomic oxygen beam source is described which is suitable for terrestrial studies of gas-surface interactions

Helium atom diffraction measurements of the surface structure and vibrational dynamics of CH_3-Si(111) and CD_3-Si(111) surfaces

The surface structure and vibrational dynamics of CH_3–Si(111) and CD_3–Si(111) surfaces were measured using helium atom scattering. The elastic diffraction patterns exhibited a lattice constant of 3.82 Å, in accordance with the spacing of the silicon underlayer. The excellent quality of the observed diffraction patterns, along with minimal diffuse background, indicated a high degree of long-range ordering and a low defect density for this interface. The vibrational dynamics were investigated by measurement of the Debye–Waller attenuation of the elastic diffraction peaks as the surface temperature was increased. The angular dependence of the specular (θ_i=θ_f) decay revealed perpendicular mean-square displacements of 1.0 x 10^(−5) Å^2 K^(−1) for the CH_3–Si(111) surface and 1.2 x 10^(−5) Å^2 K^(−1) for the CD_3–Si(111) surface, and a He-surface attractive well depth of ~7 meV. The effective surface Debye temperatures were calculated to be 983 K for the CH_3–Si(111) surface and 824 K for the CD_3–Si(111) surface. These relatively large Debye temperatures suggest that collisional energy accommodation at the surface occurs primarily through the Si–C local molecular modes. The parallel mean-square displacements were 7.1 x 10^(−4) and 7.2 x 10^(−4) Å^2 K^(−1) for the CH_3–Si(111) and CD_3–Si(111) surfaces, respectively. The observed increase in thermal motion is consistent with the interaction between the helium atoms and Si–CH_3 bending modes. These experiments have thus yielded detailed information on the dynamical properties of these robust and technologically interesting semiconductor interfaces

Molecular Interactions with Ice: Molecular Embedding, Adsorption, Detection, and Release

The interaction of atomic and molecular species with water and ice is of fundamental importance for chemistry. In a previous series of publications, we demonstrated that translational energy activates the embedding of Xe and Kr atoms in the near surface region of ice surfaces. In this paper, we show that inert molecular species may be absorbed in a similar fashion.We also revisit Xe embedding, and further probe the nature of the absorption into the selvedge. CF4 molecules with high translational energies (≥3 eV) were observed to embed in amorphous solid water. Just as with Xe, the initial adsorption rate is strongly activated by translational energy, but the CF4 embedding probability is much less than for Xe. In addition, a larger molecule, SF6, did not embed at the same translational energies that both CF4 and Xe embedded. The embedding rate for a given energy thus goes in the order Xe \u3e CF4 \u3e SF6. We do not have as much data for Kr, but it appears to have a rate that is between that of Xe and CF4. Tentatively, this order suggests that for Xe and CF4, which have similar van der Waals radii, the momentum is the key factor in determining whether the incident atom or molecule can penetrate deeply enough below the surface to embed. The more massive SF6 molecule also has a larger van der Waals radius, which appears to prevent it from stably embedding in the selvedge. We also determined that the maximum depth of embedding is less than the equivalent of four layers of hexagonal ice, while some of the atoms just below the ice surface can escape before ice desorption begins. These results show that energetic ballistic embedding in ice is a general phenomenon, and represents a significant new channel by which incident species can be trapped under conditions where they would otherwise not be bound stably as surface adsorbates. These findings have implications for many fields including environmental science, trace gas collection and release, and the chemical composition of astrophysical icy bodies in space

Vibrational dynamics and band structure of methyl-terminated Ge(111)

A combined synthesis, experiment, and theory approach, using elastic and inelastic helium atom scattering along with ab initio density functional perturbation theory, has been used to investigate the vibrational dynamics and band structure of a recently synthesized organic-functionalized semiconductor interface. Specifically, the thermal properties and lattice dynamics of the underlying Ge(111) semiconductor crystal in the presence of a commensurate (1 × 1) methyl adlayer were defined for atomically flat methylated Ge(111) surfaces. The mean-square atomic displacements were evaluated by analysis of the thermal attenuation of the elastic He diffraction intensities using the Debye-Waller model, revealing an interface with hybrid characteristics. The methyl adlayer vibrational modes are coupled with the Ge(111) substrate, resulting in significantly softer in-plane motion relative to rigid motion in the surface normal. Inelastic helium time-of-flight measurements revealed the excitations of the Rayleigh wave across the surface Brillouin zone, and such measurements were in agreement with the dispersion curves that were produced using density functional perturbation theory. The dispersion relations for H-Ge(111) indicated that a deviation in energy and lineshape for the Rayleigh wave was present along the nearest-neighbor direction. The effects of mass loading, as determined by calculations for CD_3-Ge(111), as well as by force constants, were less significant than the hybridization between the Rayleigh wave and methyl adlayer librations. The presence of mutually similar hybridization effects for CH_3-Ge(111) and CH_3-Si(111) surfaces extends the understanding of the relationship between the vibrational dynamics and the band structure of various semiconductor surfaces that have been functionalized with organic overlayers

Understanding the rotational excitation in scattering of D2 from CH3-Si(111)

We have studied the origin of the striking rotational excitation probability, found experimentally, for D2 upon scattering from a organic-terminated Si(111) surfac

Hybridization of Surface Waves with Organic Adlayer Librations: A Helium Atom Scattering and Density Functional Perturbation Theory Study of Methyl-Si(111)

The interplay of the librations of a covalently bound organic adlayer with the lattice waves of an underlying semiconductor surface was characterized using helium atom scattering in conjunction with analysis by density functional perturbation teory. The Rayleigh wave dispersion relation of CH_(3)- and CD_(3)-terminated Si(111) surfaces was probed across the entire surface Brillouin zone by the use of inelastic helium atom time-of-flight experiments. The experimentally determined Rayleigh wave dispersion relations were in agreement with those predicted by density functional perturbation theory. The Rayleigh wave for the CH_(3)- and CD_(3)-terminated Si(111) surfaces exhibited a nonsinusoidal line shape, which can be attributed to the hybridization of overlayer librations with the vibrations of the underlying substrate. This combined synthetic, experimental, and theoretical effort clearly demonstrates the impact of hybridization between librations of the overlayer and the substrate lattice waves in determining the overall vibrational band structure of this complex interface

Experimental and theoretical study of rotationally inelastic diffraction of H_2(D_2) from methyl-terminated Si(111)

Fundamental details concerning the interaction between H_2 and CH_3–Si(111) have been elucidated by the combination of diffractive scattering experiments and electronic structure and scattering calculations. Rotationally inelastic diffraction (RID) of H_2 and D_2 from this model hydrocarbon-decorated semiconductor interface has been confirmed for the first time via both time-of-flight and diffraction measurements, with modest j = 0 → 2 RID intensities for H_2 compared to the strong RID features observed for D_2 over a large range of kinematic scattering conditions along two high-symmetry azimuthal directions. The Debye-Waller model was applied to the thermal attenuation of diffraction peaks, allowing for precise determination of the RID probabilities by accounting for incoherent motion of the CH_3–Si(111) surface atoms. The probabilities of rotationally inelastic diffraction of H_2 and D_2 have been quantitatively evaluated as a function of beam energy and scattering angle, and have been compared with complementary electronic structure and scattering calculations to provide insight into the interaction potential between H_2 (D_2) and hence the surface charge density distribution. Specifically, a six-dimensional potential energy surface (PES), describing the electronic structure of the H_2(D_2)/CH_3−Si(111) system, has been computed based on interpolation of density functional theory energies. Quantum and classical dynamics simulations have allowed for an assessment of the accuracy of the PES, and subsequently for identification of the features of the PES that serve as classical turning points. A close scrutiny of the PES reveals the highly anisotropic character of the interaction potential at these turning points. This combination of experiment and theory provides new and important details about the interaction of H_2 with a hybrid organic-semiconductor interface, which can be used to further investigate energy flow in technologically relevant systems