Observation of relativistic cross-phase modulation in high-intensity laser-plasma interactions

A nonlinear optical phenomenon, relativistic cross-phase modulation, is reported. A relativistically intense light beam (I=1.3×1018 W cm-2, λ =1.05 μm) is experimentally observed to cause phase modulation of a lower intensity, copropagating light beam in a plasma. The latter beam is generated when the former undergoes the stimulated Raman forward scattering instability. The bandwidth of the Raman satellite is found to be broadened from 3.8–100 nm when the pump laser power is increased from 0.45–2.4 TW. A signature of relativistic cross-phase modulation, namely, asymmetric spectral broadening of the Raman signal, is observed at a pump power of 2.4 TW. The experimental cross-phase modulated spectra compared well with theoretical calculations. Applications to generation of high-power single-cycle pulses are also discussed

Hybrid Dielectric-Metallic Back Reflector for Amorphous Silicon Solar Cells

In this paper, we present the design and fabrication of hybrid dielectric-metallic back surface reflectors, for applications in thin film amorphous silicon solar cells. Standard multilayer distributed Bragg reflectors, require a large number of layers in order to achieve high reflectance characteristics. As it turns out, the addition of a metallic layer, to the base of such a multilayer mirror, enables a reduction in the number of dielectric layers needed to attain high reflectance performance. This paper explores the design, experimental realization and opportunities, in thin film amorphous silicon solar cells, afforded by such hybrid dielectric-metallic back surface reflectors

Quantum Electrodynamic Modeling of Silicon-Based Active Devices

We propose a time-domain analysis of an active medium based on a coupled quantum mechanical and electromagnetic model to accurately simulate the dynamics of silicon-based photonic devices. To fully account for the nonlinearity of an active medium, the rate equations of a four-level atomic system are introduced into the electromagnetic polarization vector. With these auxiliary differential equations, we solve the time evolution of the electromagnetic waves and atomic population densities using the FDTD method. The developed simulation approach has been used to model light amplification and amplified spontaneous emission in silicon nanocrystals, as well as the lasing dynamics in a novel photonic crystal-based silicon microcavity

Fabrication of Large Area Fishnet Optical Metamaterial Structures Operational at Near-IR Wavelengths

In this paper, we demonstrate a fabrication process for large area (2 mm × 2 mm) fishnet metamaterial structures for near IR wavelengths. This process involves: (a) defining a sacrificial Si template structure onto a quartz wafer using deep-UV lithography and a dry etching process (b) deposition of a stack of Au-SiO2-Au layers and (c) a ‘lift-off’ process which removes the sacrificial template structure to yield the fishnet structure. The fabrication steps in this process are compatible with today’s CMOS technology making it eminently well suited for batch fabrication. Also, depending on area of the exposure mask available for patterning the template structure, this fabrication process can potentially lead to optical metamaterials spanning across wafer-size areas

Integrated lithium niobate intensity modulator on a silicon handle with slow-wave electrodes

Segmented, or slow-wave electrodes have emerged as an index-matching solution to improve bandwidth of traveling-wave Mach Zehnder and phase modulators on the thin-film lithium niobate on insulator platform. However, these devices require the use of a quartz handle or substrate removal, adding cost and additional processing. In this work, a high-speed dual-output electro-optic intensity modulator in the thin-film silicon nitride and lithium niobate material system that uses segmented electrodes for RF and optical index matching is presented. The device uses a silicon handle and does not require substrate removal. A silicon handle allows the use of larger wafer sizes to increase yield, and lends itself to processing in established silicon foundries that may not have the capability to process a quartz or fused silica wafer. The modulator has an interaction region of 10 mm, shows a DC half wave voltage of 3.75 V, an ultra-high extinction ratio of roughly 45 dB consistent with previous work, and a fiber-to-fiber insertion loss of 7.47 dB with a 95 GHz 3 dB bandwidth.Comment: 4 pages, 3 figure

Si nanocrystal-based LEDs fabricated by ion implantation and plasma-enhanced chemical vapour deposition

Dept. ElectrònicaAn in-depth study of the physical and electrical properties of Si-nanocrystal-based MOSLEDs is presented. The active layers were fabricated with different concentrations of Si by both ion implantation and plasma-enhanced chemical vapour deposition. Devices fabricated by ion implantation exhibit a combination of direct current and field-effect luminescence under a bipolar pulsed excitation. The onset of the emission decreases with the Si excess from 6 to 3 V. The direct current emission is attributed to impact ionization and is associated with the reasonably high current levels observed in current–voltage measurements. This behaviour is in good agreement with transmission electron microscopy images that revealed a continuous and uniform Si nanocrystal distribution. The emission power efficiency is relatively low, ~10−3%, and the emission intensity exhibits fast degradation rates, as revealed from accelerated ageing experiments. Devices fabricated by chemical deposition only exhibit field-effect luminescence, whose onset decreases with the Si excess from 20 to 6 V. The absence of the continuous emission is explained by the observation of a 5 nm region free of nanocrystals, which strongly reduces the direct current through the gate. The main benefit of having this nanocrystal-free region is that tunnelling current flow assisted by nanocrystals is blocked by the SiO2 stack so that power consumption is strongly reduced, which in return increases the device power efficiency up to 0.1%. In addition, the accelerated ageing studies reveal a 50% degradation rate reduction as compared to implanted structures