Symmetry breaking caused by large R-charge

We discuss the gauge symmetry breaking via the Hosotani mechanism by using exact results on supersymmetric gauge theories based on the localization method. We use the theories on S^2 x S^1 Euclidean space, and study how the effective potential for the Wilson line phase varies by running an imaginary chemical potential. In order to break the symmetry, we find that large R-charge is necessary. With such large R-charge, we study the phase structure of the theory. In addition, we observed that a finite size effect on our curved space when we take R-charge is not so large.Comment: 20 pages, 7 figures. Typos corrected, Comments on the limit adde

LHC signals of the SO(5)×U(1) gauge-Higgs unification

We study the LHC signals of SO(5)×U(1) gauge-Higgs unification as a beyond the standard model (SM). When the extra dimensional space is not simply-connected, dynamics of the Aharonov-Bohm (AB) phase, θH, in the extra dimension can induce dynamical gauge symmetry breaking by the Hosotani mechanism. The Kaluza-Klein (KK) mass spectra of γ, Z, ZR and Higgs self couplings obey universal relations with θH in the fifth dimension. In our model, three neutral gauge bosons, Z′ bosons, appear at TeV scale. Z′ bosons are the first KK modes ZR(1), Z(1), and γ(1). We analyze Z′ bosons through dilepton events at LHC. For θH = 0.114, the mass and decay width of ZR(1), Z(1), and γ(1) are (5.73, 482), (6.07, 342), and (6.08 TeV, 886 GeV), respectively. For θH = 0.073 their masses are 8.00 ∼ 8.61 TeV. An excess of events in the dilepton invariant mass should be observed in the Z′ search at the upgraded LHC at 14 TeV

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助詞の「は」は、「対比」や「主題」を表わすことで知られているが、これまで、「(名詞句X)は(述部Y)」という規範的な文構造を前提として、名詞句に付随する形で現れるのが当然であるという認識の下、研究が行われてきた。しかし、自然会話における「は」の使用を考察すると、その規範的な文構造を逸脱した形で現れるケースがしばしば見られる。本研究は、そのような「は」の使用のうち、特に、発話頭で現れるもの、つまり、付随すべき名詞句から切り離された形で使用される「は」に焦点を当て、実際の会話データを基に考察していく。特に、それらが現れる文脈、会話の流れ、発話の配列パターンに着目し、発話頭の「は」が相互行為上、どのような役割を果たしているかということを明らかにする

Accessing the transport properties of graphene and its multi-layers at high carrier density

We present a comparative study of high carrier density transport in mono-, bi-, and trilayer graphene using electric-double-layer transistors to continuously tune the carrier density up to values exceeding 10^{14} cm^{-2}. Whereas in monolayer the conductivity saturates, in bi- and trilayer flling of the higher energy bands is observed to cause a non-monotonic behavior of the conductivity, and a large increase in the quantum capacitance. These systematic trends not only show how the intrinsic high-density transport properties of graphene can be accessed by field-effect, but also demonstrate the robustness of ion-gated graphene, which is crucial for possible future applications.Comment: 4 figures, 4 page