Quantum Entanglement Implementation Using Interferometric Electro-Optic Modulator and Coupled Mode Theory

Appeal from a ruling of the Fourth District Court for Wasatch County Honorable J. Robert Bullock, Judg

Analysis and atomic simulation of electron structures and defects in ZnO nano-crystal for its optimal doping with Al

Electrical and structural properties of zinc oxide (ZnO) unit cell and aluminum doped ZnO (AZO) super cell have been studied using density functional theory (DFT) and SIESTA package. According to the calculation of the formation energies for vacancy of Zn and O, it is observed that vacancy of O atom in Zn-rich and vacancy of Zn in O-rich conditions are more probable and stable. For AZO structure, it has been acquired that Zn atom tends to be substituted by Al in Zn-rich and O-rich conditions and creates n-type semiconductor. Finally, the electron density of states (DOS) and defects energies for the structures have been investigated

Effect of the PEDOT:PSS buffer layer on the performance of hybrid ZnO nanorods/polymer electroluminescent diode

Hybrid ZnO nanorods/polymer light-emitting diodes have excited much attraction because of the combination of high optoelectronic properties of ZnO nanorod with the variety and processability of polymers. In this research, the hybrid ZnO nanorods/polymer heterostructure UV-LED is investigated using ATLAS module of SILVACO TCAD software. In order to observe the influence of PEDOT:PSS hole injection layer/buffer layer in a AZO/ZnO NRs/MEH-PPV heterostructure device, first an ab initio approach have been done on PEDOT:PSS, MEH-PPV and AZO layers. The density of states, electronic band structure and the imaginary part of the dielectric function have been analyzed to deduce the electronic and optic features of the aforesaid layers. In continue, current–voltage characteristics and electroluminescence (EL) spectra of three structures of ITO/MEH-PPV/Al, ITO/ZnO/MEH-PPV/Al and ITO/ZnO/ZnO NR/MEH-PPV/Al have been simulated and compared with the literature experimental works to verify the simulation approach. Moreover, Langevin recombination rate, radiative recombination rate and luminescence power of the mentioned structures have been carefully investigated. Finally, the current–voltage characteristics, luminescence power and EL spectra of the novel proposed devices with the structures of ITO/PEDOT:PSS/AZO/ZnO NR/MEH-PPV/Al and ITO/PEDOT:PSS/ZnO/ZnO NR/MEH-PPV/Al have been investigated. The turn-on voltage of the proposed structure is decreased from 22 to 16 V because of the insertion of the PEDOT:PSS buffer layer and lowering of the hole injection barrier between ITO and ZnO layers. A little blue shift is observed around the wavelength of 380 nm which is attributed to the AZO layer

The impact of ZnO nanotube on the performance of hybrid inorganic/organic light-emitting diode as a single-mode ring-core UV waveguide

After a systematic survey in hybrid inorganic/organic light-emitting heterostructure devices based on ZnO in the last decay, in this novel work, the impact of the single-mode ring-core waveguide based on ZnO nanotube (NT)/MEH-PPV for ultraviolet organic light-emitting diode (UV-OLED) application has been carefully scrutinized for the first time. The proposed structure has been fabricated, simulated and compared with conventional ZnO nanorod (NR)/MEH-PPV structure. To synthesize ZnO NTs, the as-grown chemical bath deposited ZnO NRs have been etched in KCL solution in various molar (M) concentration, etching time and etching temperature. The optimized etching condition is obtained in 1 M concentration of KCL solution, 4 h etching time and 90 °C temperature. The structural properties (such as strain, stress and texture coefficient), electrical properties (such as band gap energy) and optical properties (such as Urbach energy, absorbance and photoluminescence spectra) of ZnO NTs have been investigated, systematically. In continue, hybrid UV-OLEDs have been fabricated based on ZnO NRs and ZnO NTs. According to the results, ZnO NT-based OLED depicts superior electrical and optical results including lower turn-on voltage (11.2 V < 15 V) and higher UV peak in electroluminescence spectra with respect to ZnO NR-based device. To acquire more enlightenment about UV emission mechanism, the proposed devices have been simulated through Silvaco TCAD and Lumerical FDTD software. The results from simulations illustrate great agreement with experimental results. Higher radiative recombination rate, higher Purcell factor and single-mode waveguiding effect of ring-core ZnO NT lead to major superiority of the ZnO NT-based UV-OLED fabricated and simulated in this work

Hybrid inorganic-organic light-emitting heterostructure devices based on ZnO

Future lighting technologies and the optoelectronic industry are dependent on novel electroluminescent devices. The hybrid inorganic/organic light-emitting diodes (I/O LEDs) have become popular to obtain high-quality displays and cost-efficient flexible smartphones with high optical features. Due to the importance of such LEDs and their place in the future, this review paper studies various hybrid I/O electroluminescent structures based on zinc oxide (ZnO) and conjugated polymers in the last decade (2010–2020) for the first time. From the ZnO point of view and its unique role in hybrid I/O LEDs, four main categories have been investigated, and the structural, electrical, and optical characteristics of each group have been carefully scrutinized and compared. These classifications include ZnO application in the near-UV range emission, ZnO for white light emission, ZnO as an electron injector/transporter layer in color emission, and ZnO electrode layer in hybrid emissive devices. Moreover, the I/O heterojunctions' basics, the electrical transport mechanism models and exciton emissions of the hybrid I/O LEDs based on ZnO have been analyzed. According to the survey, the optoelectronic features of hybrid I/O LEDs are influenced by n-type ZnO nanostructures (nanorods, nanotubes, nanowires, and nanoparticles). The electroluminescent intensity of these hybrid LEDs can be enhanced by selecting a suitable p-type conjugated polymer or by adding various dopants. Finally, the comparison, challenges, and future outlooks of these hybrid LEDs have been explored. Further hybrid LEDs based on ZnO can be designed and fabricated using nanotubes, quantum dots, and perovskite layers

Effect of ZnO nanorods and nanotubes on the electrical and optical characteristics of organic and perovskite light-emitting diodes

Due to their suitable electrical and optical properties, ZnO nanostructure-based organic light-emitting diodes (LEDs) and perovskite LEDs can be utilized in the optoelectronics industry. A combination of ZnO nanorods and nanotubes with various types of polymers or hybrid perovskites leads to better waveguides and transportation of carriers. Therefore, more efficient LEDs are offered to the industry. In this research, four devices, including ZnO nanorod (nanotube)/MEH-PPV (CH3NH3PbI3) LEDs are simulated by SILVACO TCAD software. To provide deeper understanding of the impact of applying nanorods and nanotubes in hybrid heterostructures, an ab initio study has been conducted and the electronic structure, density of states, absorption coefficient and dielectric function of each of these nanostructures have been scrutinized. Subsequently, the obtained data have been utilized in the SILVACO simulation, and characteristics such as the current–voltage curve, light power–voltage curve, electroluminescence (EL) spectra and radiative recombination rate of four devices have been investigated. By employing a combination of a perovskite layer and ZnO nanotubes, the turn-on voltage of the simulated devices has been decreased from 13.7 V to 1.1 V. Moreover, a drastic increment in ultraviolet emission from devices based on ZnO nanotubes can be seen, which stems from occurrence of the whispering gallery mode and low defects of nanotubes compared to nanorods. A redshift caused by a reduction in the band gaps of the nanostructures can also be observed in the EL spectra

Design and simulation of InP and silicon nanowires with different channel characteristic as biosensors to improve output sensitivity

This research contains a comparison among technologies of SiNW-FET/InPNW-FET depending on the size of channel and dopants in channel for biosensing application for two types of silicon and InP materials in the nanowire channel. A device numerical modelling tool, Silvaco ATLAS is used in step one to design three p-type SiNW-FET/InPNW-FET biosensors with a channel width of 40, 60 and 70 nm for these two types of materials and in step two, to design three p-type SiNW-FET/InPNW-FET biosensors with different dopants of 0.1 × 1014, 1 × 1014 and 10 × 1014 cm−3 for these two types of materials. Their sensing process is depended on the alteration in charge density which causes changing in the electric field at the surface of the SiNW-FET/InPNW-FET. The resistivity of the device is changed when a negatively charged biomolecules species has a chemical reaction with the external surface of a P-type SiNW-FET/InPNW-FET. To investigate the effect of different channel width and dopants on the performance of the SiNW-FET/InPNW-FET biosensor, several negatively interface charge densities, QF (−0.1 × 1012, −0.5 × 1012 and −1 × 1012 cm−2) are introduced on the surface of the SiNW-FET/InPNW-FET channel to represent as the actual target analytics (DNA) captured by the bioreceptor of the biosensor. Based on the results, these negatively QF attract the hole carriers below the surface of p-type nanowire causes to collect carriers in the channel and make an increase in the device output ID. Increment of the applied negative charge density has allowed for more ID to flow across the channel between drain and source region. The changes of ID with the applied QF are utilized to determine the sensitivities for all designed biosensor with different channel width and channel dopants. The minimum nanowire width of 40 nm with the minimum nanowire dopants of 0.1 × 1014 cm−3 for the high sensitivity silicon state of 3.6 μA/cm−2 compared to the indium phosphide state of 2.8 μA/cm−2. Therefore, the best performance for detecting the desired analyte in the silicon state with the lowest width and dopant has been achieved

Acute and Subchronic Toxicity Study of the Median Septum of Juglans regia in Wistar Rats

Purpose: Median septum of Juglans regia L. (Juglandaceae ) with anti - diabetic effects has been used in Iranian traditional medicine. The present study estimates both oral acute and subchronic toxicities. Methods: In the oral acute toxicity study, female Wistar rats were treated with doses of 10, 100, 1000, 1600 , 2900 and 5000 mg/ kg of the Juglans regia septum of methanol extract (JRSME), and were monitored for 14 days. In subchronic study, JRSME was administered by gavage at dose of 1000 mg/kg daily in Wistar rats for 28 days. Antioxidant status and biochemical examinations were fulfilled, and the vital organs were subjected to pathological analyses. Results: The extract did not produce any toxic signs or deaths; the medium lethal dose must be higher than 5000 mg/kg. In subchronic study, No significant morpholo gical and histopathological changes were observed in the studied tissues. There was a significant increase in serum malondialdehyde (MDA) level in treated group compared to control after 4 weeks of JRSME intake. The treatment of rats resulted in a signific ant reduction of serum urea level (p<0.05), kidney’s xanthine dehydrogenase (XDH) activity (p<0.001) and elevation of aldehyde oxidase (AO) activity (p<0.05) in kidney. In the treated group, the mean diameter of glomerulus and proximal urine tube epitheliu m stature was slightly greater than control group. A significant increase in serum MDA level is subject for further studies. Conclusion: This study showed that the extract has no acute or subacute adverse effects with dose of 1000 mg/kg. The administratio n of JRSME may improve kidney structure and function and help in treatment of some chronic diseases