Mechanical Behaviour of Nanostructured Iron Fabricated by Severe Plastic Deformation under Diffusion Flow of Nitrogen

This is a preprint of an article published in Materials Science Forum, Vols. 503-504. The final authenticated version is available online at: http://doi.org/10.4028/www.scientific.net/MSF.503-504.645Specific features of mechanical behaviour of ultra fine grained iron subjected to friction treatment with nitriding (FN) were clarified by comparison with that induced by friction treatment (FT) with air. Mechanical parameters such as Young’s modulus, nanohardness, and plasticity characteristic δA were found to be of high sensitive both to the scale of grain structure and to iron modification by nitrogen. Young’s modulus tends to decrease and Hall-Petch low fails to describe correlation between grain structure and hardness for submicro-grained and nanocrystalline iron. Hall-Petch coefficient, ky, decreases as grain size decreases within submicro-grained and, then, nano grained sections and it takes even negative value in nano grained section modified by nitrogen. Parameter δA is found to be dependent on combination of hardness and Young’s modulus, resulting in its variation with decreasing the grain size. The presence of secondary nanocrystalline Fe4N phase fundamentally changes mechanical behaviour of nanocrystalline iron, leading to strengthening the grain boundaries and triple junctions

Higher borides and oxygen-enriched Mg-B-O inclusions as possible pinning centers in nanostructural magnesium diboride and the influence of additives on their formation

The study of high pressure (2 GPa) synthesized MgB2-based materials allows us to conclude that higher borides (with near MgB12 stoichiometry) and oxygen-enriched Mg-B-O inclusions can be pinning centers in nanostructural magnesium diboride matrix (with average grain sizes of 15-37 nm). It has been established that additions of Ti or SiC as well as manufacturing temperature can affect the size, amount and distribution of these inclusions in the material structure and thus, influence critical current density. The superconducting behavior of materials with near MgB12 stoichiometry of matrix is discussed.Comment: 4 pages, 1 figues, presented at VORTEX VI-2009, accepted for Physica

Vickers Hardness of Diamond and cBN Single Crystals: AFM Approach

Atomic force microscopy in different operation modes (topography, derivative topography, and phase contrast) was used to obtain 3D images of Vickers indents on the surface of diamond and cBN single crystals with high spatial resolution. Confocal Raman spectroscopy and Kelvin probe force microscopy were used to study the structure of the material in the indents. It was found that Vickers indents in diamond has no sharp and clear borders. However, the phase contrast operation mode of the AFM reveals a new viscoelastic phase in the indent in diamond. Raman spectroscopy and Kelvin probe force microscopy revealed that the new phase in the indent is disordered graphite, which was formed due to the pressure-induced phase transformation in the diamond during the hardness test. The projected contact area of the graphite layer in the indent allows us to measure the Vickers hardness of type-Ib synthetic diamond. In contrast to diamond, very high plasticity was observed for 0.5 N load indents on the (001) cBN single crystal face. Radial and ring cracks were absent, the shape of the indents was close to a square, and there were linear details in the indent, which looked like slip lines. The Vickers hardness of the (111) synthetic diamond and (111) and (001) cBN single crystals were determined using the AFM images and with account for the elastic deformation of the diamond Vickers indenter during the tests

Graphene/AlGaN/GaN RF Switch

RF switches, which use a combination of graphene and two-dimensional high-density electron gas (2DEG) in the AlGaN/GaN system, were proposed and studied in the frequency band from 10 MHz to 114.5 GHz. The switches were integrated into the coplanar waveguide, which allows them to be used in any system without the use of, e.g., bonding, flip-chip and other technologies and avoiding the matching problems. The on-state insertion losses for the designed switches were measured to range from 7.4 to 19.4 dB, depending on the frequency and switch design. Although, at frequencies above 70 GHz, the switches were less effective, the switching effect was still evident with an approximately 4 dB on–off ratio. The best switches exhibited rise and fall switching times of ~25 ns and ~17 ns, respectively. The use of such a switch can provide up to 20 MHz of bandwidth in time-modulated systems, which is an outstanding result for such systems. The proposed equivalent circuit describes well the switching characteristics and can be used to design switches with required parameters

Graphene as a Schottky Barrier Contact to AlGaN/GaN Heterostructures

Electrical and noise properties of graphene contacts to AlGaN/GaN heterostructures were studied experimentally. It was found that graphene on AlGaN forms a high-quality Schottky barrier with the barrier height dependent on the bias. The apparent barrier heights for this kind of Schottky diode were found to be relatively high, varying within the range of φb = (1.0–1.26) eV. AlGaN/GaN fin-shaped field-effect transistors (finFETs) with a graphene gate were fabricated and studied. These devices demonstrated ~8 order of magnitude on/off ratio, subthreshold slope of ~1.3, and low subthreshold current in the sub-picoamperes range. The effective trap density responsible for the 1/f low-frequency noise was found within the range of (1–5) · 1019 eV−1 cm−3. These values are of the same order of magnitude as reported earlier and in AlGaN/GaN transistors with Ni/Au Schottky gate studied as a reference in the current study. A good quality of graphene/AlGaN Schottky barrier diodes and AlGaN/GaN transistors opens the way for transparent GaN-based electronics and GaN-based devices exploring vertical electron transport in graphene

Organic Vapor Sensing Mechanisms by Large-Area Graphene Back- Gated Field-Effect Transistors under UV Irradiation

The gas sensing properties of graphene back-gated field-effect transistor (GFET) sensors toward acetonitrile, tetrahydrofuran, and chloroform vapors were investigated with the focus on unfolding possible gas detection mechanisms. The FET configuration of the sensor device enabled gate voltage tuning for enhanced measurements of changes in DC electrical characteristics. Electrical measurements were combined with a fluctuation-enhanced sensing methodology and intermittent UV irradiation. Distinctly different features in 1/f noise spectra for the organic gases measured under UV irradiation and in the dark were observed. The most intense response observed for tetrahydrofuran prompted the decomposition of the DC characteristic, revealing the photoconductive and photogating effect occurring in the graphene channel with the dominance of the latter. Our observations shed light on understanding surface processes at the interface between graphene and volatile organic compounds for graphene-based sensors in ambient conditions that yield enhanced sensitivity and selectivity

Oxygenation of the traditional and thin-walled MT-YBCO in flowing oxygen and under high evaluated oxygen pressure

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