Black Phosphorus Gas Sensors

The utilization of black phosphorus and its monolayer (phosphorene) and few-layers in field-effect transistors has attracted a lot of attention to this elemental two-dimensional material. Various studies on optimization of black phosphorus field-effect transistors, PN junctions, photodetectors, and other applications have been demonstrated. Although chemical sensing based on black phosphorus devices was theoretically predicted, there is still no experimental verification of such an important study of this material. In this article, we report on chemical sensing of nitrogen dioxide (NO₂) using field-effect transistors based on multilayer black phosphorus. Black phosphorus sensors exhibited increased conduction upon NO₂ exposure and excellent sensitivity for detection of NO₂ down to 5 ppb. Moreover, when the multilayer black phosphorus field-effect transistor was exposed to NO₂ concentrations of 5, 10, 20, and 40 ppb, its relative conduction change followed the Langmuir isotherm for molecules adsorbed on a surface. Additionally, on the basis of an exponential conductance change, the rate constants for adsorption and desorption of NO₂ on black phosphorus were extracted for different NO₂ concentrations, and they were in the range of 130–840 s. These results shed light on important electronic and sensing characteristics of black phosphorus, which can be utilized in future studies and applications

Tandem Solar Cells Using GaAs Nanowires on Si: Design, Fabrication, and Observation of Voltage Addition

Multijunction solar cells provide us a viable approach to achieve efficiencies higher than the Shockley–Queisser limit. Due to their unique optical, electrical, and crystallographic features, semiconductor nanowires are good candidates to achieve monolithic integration of solar cell materials that are not lattice-matched. Here, we report the first realization of nanowire-on-Si tandem cells with the observation of voltage addition of the GaAs nanowire top cell and the Si bottom cell with an open circuit voltage of 0.956 V and an efficiency of 11.4%. Our simulation showed that the current-matching condition plays an important role in the overall efficiency. Furthermore, we characterized GaAs nanowire arrays grown on lattice-mismatched Si substrates and estimated the carrier density using photoluminescence. A low-resistance connecting junction was obtained using n⁺-GaAs/p⁺-Si heterojunction. Finally, we demonstrated tandem solar cells based on top GaAs nanowire array solar cells grown on bottom planar Si solar cells. The reported nanowire-on-Si tandem cell opens up great opportunities for high-efficiency, low-cost multijunction solar cells

Highly Sensitive and Quick Detection of Acute Myocardial Infarction Biomarkers Using In₂O₃ Nanoribbon Biosensors Fabricated Using Shadow Masks

We demonstrate a scalable and facile lithography-free method for fabricating highly uniform and sensitive In₂O₃ nanoribbon biosensor arrays. Fabrication with shadow masks as the patterning method instead of conventional lithography provides low-cost, time-efficient, and high-throughput In₂O₃ nanoribbon biosensors without photoresist contamination. Combined with electronic enzyme-linked immunosorbent assay for signal amplification, the In₂O₃ nanoribbon biosensor arrays are optimized for early, quick, and quantitative detection of cardiac biomarkers in diagnosis of acute myocardial infarction (AMI). Cardiac troponin I (cTnI), creatine kinase MB (CK-MB), and B-type natriuretic peptide (BNP) are commonly associated with heart attack and heart failure and have been selected as the target biomarkers here. Our approach can detect label-free biomarkers for concentrations down to 1 pg/mL (cTnI), 0.1 ng/mL (CK-MB), and 10 pg/mL (BNP), all of which are much lower than clinically relevant cutoff concentrations. The sample collection to result time is only 45 min, and we have further demonstrated the reusability of the sensors. With the demonstrated sensitivity, quick turnaround time, and reusability, the In₂O₃ nanoribbon biosensors have shown great potential toward clinical tests for early and quick diagnosis of AMI

Carbon Nanotube Macroelectronics for Active Matrix Polymer-Dispersed Liquid Crystal Displays

Active matrix liquid crystal display (AMLCD) is the most widely used display technology nowadays. Transparent display is one of the emerging technologies to provide people with more features such as displaying images on transparent substrates and simultaneously enabling people to see the scenery behind the panel. Polymer-dispersed liquid crystal (PDLC) is a possible active matrix transparent display technology due to its high transparency, good visibility, and low power consumption. Carbon nanotubes (CNTs) with excellent mobility, high transparency, and room-temperature processing compatibility are ideal materials for the driver circuit of the PDLC display. Here, we report the monolithic integration of CNT thin-film transistor driver circuit with PDLC pixels. We studied the transmission properties of the PDLC pixels and characterized the performance of CNT thin-film transistors. Furthermore, we successfully demonstrated active matrix seven-segment PDLC displays using CNT driver transistors. Our achievements open up opportunities for future nanotube-based, flexible thin-film transparent display electronics

GaAs Nanowire Array Solar Cells with Axial p–i–n Junctions

Because of unique structural, optical, and electrical properties, solar cells based on semiconductor nanowires are a rapidly evolving scientific enterprise. Various approaches employing III–V nanowires have emerged, among which GaAs, especially, is under intense research and development. Most reported GaAs nanowire solar cells form p–n junctions in the radial direction; however, nanowires using axial junction may enable the attainment of high open circuit voltage (<i>V</i>_oc) and integration into multijunction solar cells. Here, we report GaAs nanowire solar cells with axial p–i–n junctions that achieve 7.58% efficiency. Simulations show that axial junctions are more tolerant to doping variation than radial junctions and lead to higher <i>V</i>_oc under certain conditions. We further study the effect of wire diameter and junction depth using electrical characterization and cathodoluminescence. The results show that large diameter and shallow junctions are essential for a high extraction efficiency. Our approach opens up great opportunity for future low-cost, high-efficiency photovoltaics

High-Performance Sub-Micrometer Channel WSe₂ Field-Effect Transistors Prepared Using a Flood–Dike Printing Method

Printing technology has potential to offer a cost-effective and scalable way to fabricate electronic devices based on two-dimensional (2D) transition metal dichalcogenides (TMDCs). However, limited by the registration accuracy and resolution of printing, the previously reported printed TMDC field-effect transistors (FETs) have relatively long channel lengths (13–200 μm), thus suffering low current-driving capabilities (≤0.02 μA/μm). Here, we report a “flood–dike” self-aligned printing technique that allows the formation of source/drain metal contacts on TMDC materials with sub-micrometer channel lengths in a reliable way. This self-aligned printing technique involves three steps: (i) printing of gold ink on a WSe₂ flake to form the first gold electrode, (ii) modifying the surface of the first gold electrode with a self-assembled monolayer (SAM) to lower the surface tension and render the surface hydrophobic, and (iii) printing of gold ink close to the SAM-treated first electrode at a certain distance. During the third step, the gold ink would first spread toward the edge of the first electrode and then get stopped by the hydrophobic SAM coating, ending up forming a sub-micrometer channel. With this printing technique, we have successfully downscaled the channel length to ∼750 nm and achieved enhanced on-state current densities of ∼0.64 μA/μm (average) and high on/off current ratios of ∼3 × 10⁵ (average). Furthermore, with our high-performance printed WSe₂ FETs, driving capabilities for quantum-dot light-emitting diodes (LEDs), inorganic LEDs, and organic LEDs have been demonstrated, which reveals the potential of using printed TMDC electronics for display backplane applications