Tandem Solar Cells Using GaAs Nanowires on Si: Design,
Fabrication, and Observation of Voltage Addition
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Abstract
Multijunction solar cells provide
us a viable approach
to achieve efficiencies higher than the Shockley–Queisser limit.
Due to their unique optical, electrical, and crystallographic features,
semiconductor nanowires are good candidates to achieve monolithic
integration of solar cell materials that are not lattice-matched.
Here, we report the first realization of nanowire-on-Si tandem cells
with the observation of voltage addition of the GaAs nanowire top
cell and the Si bottom cell with an open circuit voltage of 0.956
V and an efficiency of 11.4%. Our simulation showed that the current-matching
condition plays an important role in the overall efficiency. Furthermore,
we characterized GaAs nanowire arrays grown on lattice-mismatched
Si substrates and estimated the carrier density using photoluminescence.
A low-resistance connecting junction was obtained using n<sup>+</sup>-GaAs/p<sup>+</sup>-Si heterojunction. Finally, we demonstrated tandem
solar cells based on top GaAs nanowire array solar cells grown on
bottom planar Si solar cells. The reported nanowire-on-Si tandem cell
opens up great opportunities for high-efficiency, low-cost multijunction
solar cells