135 research outputs found

    Thermal characterization of electrically injected thin-film InGaAsP microdisk lasers on Si

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    Abstract—We have performed a numerical and experimental analysis of the thermal behavior of electrically injected microdisk lasers that are defined in an InGaAsP-based thin film bonded on top of a silicon wafer. Both the turn-on as well as the pulsed-regime temperature evolution in the lasing region was simulated using the finite-element method. The simulation results are in good agreement with experimental data, which was extracted from the broadening of the time-averaged emission spectra. Lasing at room temperature was only possible in pulsed regime due to the high thermal resistance (10 K/mW). Some strategies to decrease the thermal resistance of the microdisk lasers are proposed and discussed. Index Terms—Heterogeneous integration, InGaAsP, integrated optics, microdisk laser, Si, thermal characterization

    Photonic crystals and optical mode engineering for thin film photovoltaics

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    International audienceIn this paper, we present the design, analysis, and experimental results on the integration of 2D photonic crystals in thin film photovoltaic solar cells based on hydrogenated amorphous silicon. We introduce an analytical approach based on time domain coupled mode theory to investigate the impact of the photon lifetime and anisotropy of the optical resonances on the absorption efficiency. Specific design rules are derived from this analysis. We also show that, due to the specific properties of the photonic crystal resonances, the angular acceptance of such solar cells is particularly high. Rigorous Coupled Wave Analysis simulations show that the absorption in the a-Si:H active layers, integrated from 300 to 750nm, is only decreased from 65.7% to 60% while the incidence angle is increased from 0 to 55°. Experimental results confirm the stability of the incident light absorption in the patterned stack, for angles of incidence up to 50°

    Near-field and far-field analysis of an azimuthally polarized slow Bloch mode microlaser

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    We report on the near- and far-field investigation of the slow Bloch modes associated with the G point of the Brillouin zone, for a honeycomb lattice photonic crystal, using near-field scanning optical microscopy (NSOM) and infra-red CCD camera. The array of doughnut-shaped monopolar mode (mode M) inside each unit cell, predicted previously by numerical simulation, is experimentally observed in the near-field by means of a metal-coated NSOM tip. In far-field, we detect the azimuthal polarization of the doughnut laser beam due to destructive and constructive interference of the mode radiating from the surface (mode TEM01*). A divergence of 2° for the laser beam and a mode size of (12.8 ± 1) μm for the slow Bloch mode at the surface of the crystal are also estimated. © 2010 Optical Society of America

    Microlasers based on effective index confined slow light modes in photonic crystal waveguides

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    We present the design, theory and experimental implementation of a low modal volume microlaser based on a line-defect 2D-photonic crystal waveguide. The lateral confinement of low-group velocity modes is controlled by the post-processing of 1 to 3μm wide PMMA strips on top of two dimensional photonic crystal waveguides. Modal volume around 1.3 (λ/n)3can be achieved using this scheme. We use this concept to fabricate microlaser devices from an InP-based heterostructure including InAs0.65P0.35quantum wells emitting around 1550nm and bonded onto a fused silica wafer. We observe stable, room-temperature laser operation with an effective lasing threshold around 0.5mW. © 2008 Optical Society of America

    Room temperature low-threshold InAs/InP quantum dot single mode photonic crystal microlasers at 1.5 ÎĽm using cavity-confined slow light

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    We have designed, fabricated, and characterized an InP photonic crystal slab structure that supports a cavity-confined slow-light mode, i.e. a bandgap-confined valence band-edge mode. Three dimensional finite difference in time domain calculations predict that this type of structure can support electromagnetic modes with large quality factors and small mode volumes. Moreover these modes are robust with respect to fabrication imperfections. In this paper, we demonstrate room-temperature laser operation at 1,5 μm of a cavity-confined slow-light mode under pulsed excitation. The gain medium is a single layer of InAs/lnP quantum dots. An effective peak pump power threshold of 80 μW is reported. © 2009 Optical Society of America

    Colloidal nanophotonics: The emerging technology platform

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    Dating back to decades or even centuries ago, colloidal nanophotonics during the last ten years rapidly extends towards light emitting devices, lasers, sensors and photonic circuitry to manifest itself as an emerging technology platform rather than an entirely academic research field. ©2016 Optical Society of America

    Nano-meter scale heterogeneous III-V semiconductor-silicon photonic integration

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    It is pointed out that the fully recognised and ever growing need for a combination of photonic and electronic functionalities could be made fully effective by the heterogeneous integration of active III-V semiconductor/passive silicon photonics and silicon microelectronics. It is shown that the inevitable scaling down to nano-meter range of photonic integration requested by the necessary matching to microelectronics is made possible by the heterogeneous association of IIIV semiconductor and silicon membranes including high index contrast and nano-meter scale structuring. It is emphasized that these membrane photonic nanostructures can be considered as the absolute must on the track to the ultimate confinement of photons which is highly desired in the prospect of the development of Micro-Nano-Photonic devices and systems. Examples of devices and systems along this approach are presented (micro-laser/micro-guide integration, active devices with very low threshold,...)

    Design and investigation of surface addressable Photonic Crystal cavity confined band edge modes for quantum photonic devices

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    We propose to use a localized G-point slow Bloch mode in a 2D-Photonic Crystal (PC) membrane to realize an efficient surface emitting source. This device can be used as a quantum photonic device, e.g. a single photon source. The physical mechanisms to increase the Q/V factor and to improve the directivity of the PC microcavity rely on a fine tuning of the geometry in the three directions of space. The PC lateral mirrors are first engineered in order to optimize photons confinement. Then, the effect of a Bragg mirror below the 2DPC membrane is investigated in terms of out-of-plane leakages and far field emission pattern. This photonic heterostructure allows for a strong lateral confinement of photons, with a modal volume of a few (λ/n)3 and a Purcell factor up to 80, as calculated by two different numerical methods. We finally discuss the efficiency of the single photon source for different collection set-up. © 2011 Optical Society of America

    Electrically pumped InP-based microdisk lasers integrated with a nanophotonic silicon-on-insulator waveguide circuit

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    Abstract: We have achieved electrically-injected continuous-wave lasing in InP-based microdisk structures coupled to a sub-micron silicon-on-insulator wire waveguide, fabricated through bonding technology. The threshold current was 0.6 mA with up to 7 µW continuous-wave output power. ©2007 Optical Society of America OCIS codes: (140.5960) Semiconductor lasers; (250.5300) Photonic integrated circuits 1
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