Electronic superlattice revealed by resonant scattering from random impurities in Sr3Ru2O7

Resonant elastic x-ray scattering (REXS) is an exquisite element-sensitive tool for the study of subtle charge, orbital, and spin superlattice orders driven by the valence electrons, which therefore escape detection in conventional x-ray diffraction (XRD). Although the power of REXS has been demonstrated by numerous studies of complex oxides performed in the soft x-ray regime, the cross section and photon wavelength of the material-specific elemental absorption edges ultimately set the limit to the smallest superlattice amplitude and periodicity one can probe. Here we show -- with simulations and REXS on Mn-substituted Sr$_3$Ru$_2$O$_7$ -- that these limitations can be overcome by performing resonant scattering experiments at the absorption edge of a suitably-chosen, dilute impurity. This establishes that -- in analogy with impurity-based methods used in electron-spin-resonance, nuclear-magnetic resonance, and M\"ossbauer spectroscopy -- randomly distributed impurities can serve as a non-invasive, but now momentum-dependent probe, greatly extending the applicability of resonant x-ray scattering techniques

Polarization dependent hard X-ray photoemission experiments for solids: Efficiency and limits for unraveling the orbital character of the valence band

We have investigated the efficiency and limits of polarization dependent hard X-ray photoelectron spectroscopy (HAXPES) in order to establish how well this method can be used to unravel quantitatively the contributions of the orbitals forming the valence band of solids. By rotating the energy analyzer rather than the polarization vector of the light using a phase retarder, we obtained the advantage that the full polarization of the light is available for the investigation. Using NiO, ZnO, and Cu2O as examples for solid state materials, we established that the polarization dependence is much larger than in photoemission experiments utilizing ultra-violet or soft X-ray light. Yet we also have discovered that the polarization dependence is less than complete on the basis of atomic calculations, strongly suggesting that the trajectories of the outgoing electrons are affected by appreciable side-scattering processes even at these high kinetic energies. We have found in our experiment that these can be effectively described as a directional spread of +/- 18 degrees of the photoelectrons. This knowledge allows us to identify, for example, reliably the Ni 3d spectral weight of the NiO valence band and at the same time to demonstrate the importance of the Ni 4s for the chemical stability of the compound. (C) 2014 Elsevier B.V. All rights reserved

Strong ferromagnetism at the surface of an antiferromagnet caused by buried magnetic moments

Carrying a large, pure spin magnetic moment of 7 $\mu$bohr/atom in the half-filled 4f shell, divalent europium is an outstanding element for assembling novel magnetic devices in which a two-dimensional electron gas (2DEG) is polarized due to exchange interaction with an underlying magnetically-active Eu layer, even in the absence of a magnetic field. A natural example for such geometry is the intermetallic layered material EuRh$_2$Si$_2$, in which magnetically active layers of Eu are well separated from each other by non-magnetic Si-Rh-Si trilayers. Applying angle-resolved photoelectron spectroscopy (ARPES) to this system, we discovered a large spin splitting of a Shockley-type surface state formed by itinerant electrons of the Si-Rh-Si surface related trilayer. ARPES shows that the splitting sets in below approx. 32.5K and quickly saturates to around 150meV upon cooling. Interestingly, this temperature is substantially higher than the order temperature of the Eu 4f moments (approx. 24.5K) in the bulk. Our results clearly show that the magnetic exchange interaction between the surface state and the buried 4f moments in the 4th subsurface layer is the driving force for the formation of itinerant ferromagnetism at the surface. We demonstrate that the observed spin splitting of the surface state, reflecting properties of 2DEG, is easily controlled by temperature. Such a splitting may also be induced into states of functional surface layers deposited onto the surface of EuRh$_2$Si$_2$ or similarly ordered magnetic materials with metallic or semiconducting properties.Comment: 5 pages, 3 figure