Corner overgrowth: Bending a high mobility two-dimensional electron system by 90 degrees

Introducing an epitaxial growth technique called corner overgrowth, we fabricate a quantum confinement structure consisting of a high-mobility GaAs/AlGaAs heterojunction overgrown on top of an ex-situ cleaved substrate corner. The resulting corner-junction quantum-well heterostructure effectively bends a two-dimensional electron system (2DES) at an atomically sharp $90^{\rm o}$ angle. The high-mobility 2DES demonstrates fractional quantum Hall effect on both facets. Lossless edge-channel conduction over the corner confirms a continuum of 2D electrons across the junction, consistent with Schroedinger-Poisson calculations of the electron distribution. This growth technique differs distinctly from cleaved-edge overgrowth and enables a complementary class of new embedded quantum heterostructures.Comment: 3 pages, 4 figures, latest version accepted to AP

Observations of the Biology of \u3ci\u3ePhasgonophora Sulcata\u3c/i\u3e (Hymenoptera: Chalcididae), a Larval Parasitoid of the Twolined Chestnut Borer, \u3ci\u3eAgrilus Bilineatus\u3c/i\u3e (Coleoptera: Buprestidae), in Wisconsin

Phasgorzophora sulcata Westwood was the principal larval parasitoid of Agrilus bilineatus (Weber) during a study conducted in a natural oak-hardwood forest in the Kettle Moraine State Forest, Jefferson County, Wisconsin. Mean percent larval parasitism was 10.5%. Mean A. bilineatus and P. sulcata densities were, respectively, 53.0 and 6.1 adults per square meter of bark. The theoretical developmental threshold temperatures for over- wintering A. bilineatus and P. sulcata larvae were 17.8 and 19.l0C, respectively. The peak flight period of P. sulcata (9 July 1980) occurred ca. 3 weeks after the A. bilineatus peak flight (18 June 1980) at about the time of peak A. bilineatus egg eclosion. The P. sulcata sex ratios (malexfemales) for laboratory-reared and field-captured adults were 1:1.35 and 1:3.22, respectively

A circular dielectric grating for vertical extraction of single quantum dot emission

We demonstrate a nanostructure composed of partially etched annular trenches in a suspended GaAs membrane, designed for efficient and moderately broadband (approx. 5 nm) emission extraction from single InAs quantum dots. Simulations indicate that a dipole embedded in the nanostructure center radiates upwards into free space with a nearly Gaussian far-field, allowing a collection efficiency > 80 % with a high numerical aperture (NA=0.7) optic, and with 12X Purcell radiative rate enhancement. Fabricated devices exhibit an approx. 10 % photon collection efficiency with a NA=0.42 objective, a 20X improvement over quantum dots in unpatterned GaAs. A fourfold exciton lifetime reduction indicates moderate Purcell enhancement.Comment: (3 pages

Simulations of the electrostatic and magnetic field properties and tests of the Penning-ion source at THe-Trap

The Tritium-Helium-Trap (THe-Trap) is a Penning-trap mass spectrometer dedicated to measure the mass ratio of tritium and helium-3 with a relative precision of 10-11. To reach this precision, the properties of the Penning-trap must be understood very well. Geometrical deviations from the ideal case cause higher-order components in the electrostatic potential. Extended simulations have been carried out to investigate first the dependence of the simulation tool Comsol Multiphysics on the resolution chosen and then to quantify the higher-order terms. The simulations were successful and in good agreement with the experimental observations. It was also possible to simulate the image charge effect. The simulated image charge effect confirms the experimental value. Similar investigations were performed to estimate the influence of the experimental setup on the magnetic field. The influence of ferromagnetic materials was determined reliably. The final part of this thesis is the characterization of the external Penning-ion source. For this, a new Faraday cup was designed and implemented. The new device can measure an ion beam from the Penning-ion source and helps to improve their operating parameters

Study of Higher Order Modes in Superconducting Accelerating Structures for Linac Applications

Higher Order Modes (HOMs) can severely limit the operation of superconducting cavities in a linear accelerator with high beam current, high duty factor and complex pulse structure. Therefore, the full HOM spectrum has to be analysed in detail to identify potentially dangerous modes already during the design phase and to define their damping requirements. For this purpose a dedicated beam dynamics simulation code, Simulation of higher order Mode Dynamics (SMD), focusing on beam-HOM interaction, has been developed in the frame of this project. SMD allows to analyse the beam behaviour under the presence of HOMs, taking into account many important effects, such as for example the HOM frequency spread, beam input jitter, different chopping patterns, as well as klystron and alignment errors. SMD is used to investigate in detail into the effects of HOMs in the Superconducting Proton Linac (SPL) at CERN and in particular their potential to drive beam instabilities in the longitudinal and transverse direction. Based on these results, HOM damping requirements for the HOM coupler design are then defined. In addition, the linear accelerators of the European Spallation Source (ESS) and the Spallation Neutron Source (SNS) are analysed with respect to HOM impact and the results are compared with the SPL simulations

Vertical quantum wire realized with double cleaved-edge overgrowth

A quantum wire is fabricated on (001)-GaAs at the intersection of two overgrown cleaves. The wire is contacted at each end to n+ GaAs layers via two-dimensional (2D) leads. A sidegate controls the density of the wire revealing conductance quantization. The step height is strongly reduced from 2e^2/h due to the 2D-lead series resistance. We characterize the 2D density and mobility for both cleave facets with four-point measurements. The density on the first facet is modulated by the substrate potential, depleting a 2um wide strip that defines the wire length. Micro-photoluminescence shows an extra peak consistent with 1D electron states at the corner.Comment: 4 pages, 4 figure